Ti films of same thickness, and near normal deposition angle, and same deposition rate were deposited on glass substrates, at room temperature, under UHV conditions. Different annealing temperatures as 393K, 493K and 593K with uniform 8 cm3/sec, oxygen flow, were used for producing titanium oxide layers. Their nanostructures were determined by AFM and XRD methods. Roughness of the films changed due to annealing process. The gettering property of Ti and annealing temperature can play an important role in the nanostructure of the films.
Methyltrimethoxysilane has been used as a base in the formation of transparent sol-gel coatings on glass substrates. Several types of alcohol were used as solvents in order to obtain the highest transparency and scratch hardness of the film. The coating cures at room temperature (26∘C). The clarity of the coated film on the glass substrate was measured using haze meter. The best formulation based on the lowest haze values and light diffusion is the ratio of 1 : 1 trimethoxy silane to N-propanol. The haze value obtained for this system is 0.86, and the light diffusion was measured at 0.77%. Tack-free time and hardness were within acceptable value. Nanoparticles of silver, zinc oxide, and titanium dioxide were incorporated into the coating system from 0.5% to 2.5% by weight, and the haze values of the dried film were measured. The highest transparency was obtained from the samples that were mixed with 0.5% silver. The haze value for this sample is of 0.5.
Vacuum evaporation technique was used to prepare pure and doped ZnS:Pb thin films at10% atomic weight of Pb element onto glass substrates at room temperature for 200 nm thickness. Effect of doping on a.c electrical properties such as, a.c conductivity, real, and imaginary parts of dielectric constant within frequency range (10 KHz - 10 MHz) are measured. The frequency dependence of a.c conductivity is matched with correlated barrier hoping especially at higher frequency. Effect of doping on behavior of a.c mechanism within temperature range 298-473 K was studied.
In the present study, the microwave heating method was used to prepare cadmium sulfide quantum dots CdSQDs films. CdS nanoparticles size average obtained as (7nm). The morphology, structure and composition of prepared CdSQDs were examined using (FE-SEM), (XRD) and (EDX). Optical properties of CdSQDs thin films formed and deposited onto glass substrates have been studied at room temperature using UV/ Visible spectrophotometer within the wavelength of (300-800nm), and Photoluminescence (PL) spectrum. The optical energy gap (Eg) which estimated using Tauc relation was equal (2.6eV). Prepared CdS nanoparticles thin films are free from cracks, pinholes and have high adhesion to substrate.
Results of a study of alloys and films with various Pb content have been reported and discussed. Films of of thickness 1.5 μm have been deposited on glass substrates by flash thermal evaporation method at room temperature, under vacuum at constant deposition rate. These films were annealed under vacuum around 10−6Torr at different temperatures up to 523 K. The composition of the elements in alloys was determined by standard surfaces techniques such as atomic absorption spectroscopy (AAS) and X-ray fluorescence (XRF), and the results were found of high accuracy and in very good agreement with the theoretical values. The structure for alloys and films is determined by using X-ray diffraction. This measurement reveals that the structure is polycrystalline with cubic structure and there are strong peaks at the direction (200) and (111). The effect of heat treatment on the crystalline orientation, relative intensity, and grain size of films is presented.
ABSTRACTThe effect of hydrogen treatment on room temperature electric properties of narrow-gap semiconductor thin films ZnxCdyHg1−z−yTe (0 < x < 0.50, 0.20 < y < 0.40) is investigated for the first time. ZnCdHgTe films of 2 – 5 [.proportional]m thickness were grown on glass substrates by pulsed laser deposition technique. As-grown films were thermally treated in the flow of molecular H2 at 200°C during 24 hours. Comparison between electric characteristics measured before and after hydrogenation showed sufficient changes of the film resistance and appearance of photosensitivity in the visible wavelength range. Study of current-voltage characteristics of the films revealed appearance and significant change of diode-like properties.
Room temperature growth of biaxially aligned yttria-stabilized zirconia films on glass substrates by pulsed-laser deposition