Unusual electroluminescence from n-ZnO@i-MgO core–shell nanowire color-tunable light-emitting diode at reverse bias

2014 ◽  
Vol 16 (20) ◽  
pp. 9302-9308 ◽  
Author(s):  
Xiaoming Mo ◽  
Guojia Fang ◽  
Hao Long ◽  
Songzhan Li ◽  
Haoning Wang ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Core Shell ◽  
Light Emitting ◽  
Color Tunable

Light-emitting diodes based on n-ZnO@i-MgO core–shell nanowire/p-NiO heterojunction only demonstrated reverse-bias electroluminescence.

scholarly journals Dual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Tae Yeon Kim ◽  
Sungho Park ◽  
Byung Jun Kim ◽  
Su Been Heo ◽  
Jong Hun Yu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Vanadium Oxide ◽  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Dual Functional ◽  
Solution Processable

AbstractDual-functional quantum-dots light emitting diodes (QLEDs) have been fabricated using solution processable vanadium oxide (V2O5) hole injection layer to control the carrier transport behavior. The device shows selectable functionalities of photo-detecting and light-emitting behaviors according to the different operating voltage conditions. The device emitted a bright green light at the wavelength of 536 nm, and with the maximum luminance of 31,668 cd/m2 in a forward bias of 8.6 V. Meanwhile, the device could operate as a photodetector in a reverse bias condition. The device was perfectly turned off in a reverse bias, while an increase of photocurrent was observed during the illumination of 520 nm wavelength light on the device. The interfacial electronic structure of the device prepared with different concentration V2O5 solution was measured in detail using x-ray and ultraviolet photoelectron spectroscopy. Both the highest occupied molecular orbital and the gap state levels were moved closer to the Fermi level, according to increase the concentration of V2O5 solution. The change of gap state position enables to fabricate a dual-functional QLEDs. Therefore, the device could operate both as a photodetector and as a light-emitting diode with different applied bias. The result suggests that QLEDs can be used as a photosensor and as a light-emitting diode for the future display industry.

Color-tunable Ag-In-Zn-S quantum-dot light-emitting devices realizing green, yellow and amber emissions

2017 ◽  
Vol 5 (4) ◽  
pp. 953-959 ◽  
Author(s):  
Dan Bi Choi ◽  
Sohee Kim ◽  
Hee Chang Yoon ◽  
Minji Ko ◽  
Heesun Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Core Shell ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Standard Device ◽  
Device Architecture ◽  
Color Tunable ◽  
The Creation

In this study, we report the creation of heterostructured alloy core/shell Ag-In-Zn-S (AIZS)/ZnS quantum dots (QDs) by sequential core-forming, alloying and shelling processes and the fabrication of color-tunable QD light-emitting diodes (QLEDs) with a standard device architecture.

Surface Organic Ligands-Passivated Quantum Dots: Toward High-Performance Light-Emitting Diodes with Long Lifetime

2021 ◽  
Author(s):  
Lishuang Wang ◽  
Ying Lv ◽  
Jie Lin ◽  
Jialong Zhao ◽  
Xingyuan Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Organic Ligands ◽  
Colloidal Quantum Dots ◽  
Core Shell ◽  
Light Emitting ◽  
Long Lifetime

For quantum dots light-emitting diodes (QLEDs), typical colloidal quantum dots (QDs) are usually composed of a core/shell heterostructure which is covered with organic ligands as surface passivated materials to confine...

scholarly journals Unravelling the electron injection/transport mechanism in organic light-emitting diodes

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Tsubasa Sasaki ◽  
Munehiro Hasegawa ◽  
Kaito Inagaki ◽  
Hirokazu Ito ◽  
Kazuma Suzuki ◽  
...  
Keyword(s):  
Work Function ◽  
Transport Mechanism ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Electron Injection ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Materials Used

AbstractAlthough significant progress has been made in the development of light-emitting materials for organic light-emitting diodes along with the elucidation of emission mechanisms, the electron injection/transport mechanism remains unclear, and the materials used for electron injection/transport have been basically unchanged for more than 20 years. Here, we unravelled the electron injection/transport mechanism by tuning the work function near the cathode to about 2.0 eV using a superbase. This extremely low-work function cathode allows direct electron injection into various materials, and it was found that organic materials can transport electrons independently of their molecular structure. On the basis of these findings, we have realised a simply structured blue organic light-emitting diode with an operational lifetime of more than 1,000,000 hours. Unravelling the electron injection/transport mechanism, as reported in this paper, not only greatly increases the choice of materials to be used for devices, but also allows simple device structures.

Electrically driven single microribbon based near-infrared exciton-polariton light-emitting diode

CrystEngComm ◽  
2021 ◽  
Author(s):  
Mingming Jiang ◽  
Fupeng Zhang ◽  
Kai Tang ◽  
Peng Wan ◽  
Caixia Kan
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Light Sources ◽  
Coherent Light ◽  
Light Emitting ◽  
Exciton Polaritons ◽  
Laser Devices

Achieving electrically-driven exciton-polaritons has drawn substantial attention toward developing ultralow-threshold coherent light sources, containing polariton laser devices and high-performance light-emitting diodes (LEDs). In this work, we demonstrate an electrically driven...

scholarly journals The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga2O3 Substrate for Vertical Light Emitting Diodes

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 42
Author(s):  
Jie Zhao ◽  
Weijiang Li ◽  
Lulu Wang ◽  
Xuecheng Wei ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Stark Effect ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Strain Relaxation ◽  
Blue Shift ◽  
Peak Position ◽  
Excitation Power ◽  
Light Extraction Efficiency ◽  
Excitation Power Density ◽  
Light Emitting

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga2O3 can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga2O3 nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga2O3 substrate.

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