Solution-processable metal oxide semiconductors for thin-film transistor applications

2013 ◽  
Vol 42 (16) ◽  
pp. 6910 ◽  
Author(s):  
Stuart R. Thomas ◽  
Pichaya Pattanasattayavong ◽  
Thomas D. Anthopoulos
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistor ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Solution Processable

ChemInform Abstract: Solution-Processable Metal Oxide Semiconductors for Thin-Film Transistor Applications

ChemInform ◽  
2013 ◽  
Vol 44 (41) ◽  
pp. no-no
Author(s):  
Stuart R. Thomas ◽  
Pichaya Pattanasattayavong ◽  
Thomas D. Anthopoulos
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistor ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Solution Processable

scholarly journals Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors

2020 ◽  
Vol 7 (9) ◽  
pp. 1822-1844 ◽  
Author(s):  
Nidhi Tiwari ◽  
Amoolya Nirmal ◽  
Mohit Rameshchandra Kulkarni ◽  
Rohit Abraham John ◽  
Nripan Mathews
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Temperature Activation

The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.

Organic materials as a passivation layer for metal oxide semiconductors

2020 ◽  
Vol 8 (43) ◽  
pp. 14983-14995 ◽  
Author(s):  
Dongil Ho ◽  
Hyewon Jeong ◽  
Sunwoo Choi ◽  
Choongik Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Organic Materials ◽  
Metal Oxide Semiconductors ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Oxide Semiconductors ◽  
The Stability ◽  
Stability Enhancement

This highlight reviews the recent studies on organic passivation for the stability enhancement of oxide thin-film transistors.

Impact of hydrogen dopant incorporation on InGaZnO, ZnO and In2O3 thin film transistors

2020 ◽  
Vol 22 (3) ◽  
pp. 1591-1597 ◽  
Author(s):  
Huiru Wang ◽  
Jiawei He ◽  
Yongye Xu ◽  
Nicolas André ◽  
Yun Zeng ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Dopant Incorporation

Hydrogen (H) dopants’ role and active defects inside n-type metal oxide semiconductors (MOXs) are comprehensively studied via continuous H plasma treatment.

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