Study on the defects in metal–organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysis

2013 ◽  
Vol 1 (40) ◽  
pp. 6695 ◽  
Author(s):  
Un Ki Kim ◽  
Sang Ho Rha ◽  
Jeong Hwan Kim ◽  
Yoon Jang Chung ◽  
Jisim Jung ◽  
...  
Keyword(s):  
Thin Films ◽  
Stability Analysis ◽  
Tin Oxide ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Negative Bias ◽  
Oxide Thin Films ◽  
Chemical Vapor Deposited ◽  
Zinc Tin Oxide ◽  
Metal Organic

Properties of Tin Oxide Films Prepared by MOCVD

2004 ◽  
Vol 449-452 ◽  
pp. 997-1000 ◽  
Author(s):  
Gwang Pyo Choi ◽  
Yong Joo Park ◽  
Whyo Sup Noh ◽  
Jin Seong Park
Keyword(s):  
Thin Films ◽  
Oxygen Content ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Tin Oxide Films ◽  
N2 Annealing

Tin oxide thin films were deposited at 375 °C on α-alumina substrate by metal-organic chemical vapor deposition (MOCVD) process. A number of hillocks on the film were formed after air annealing at 500 °C for 30 min and few things in N2 annealing. The oxygen content and the binding energy after air annealing came to close the stoichiometric SnO2. The cauliflower hillocks of the film seem to be formed by the continuous migration of crystallites from a cauliflower grain on the substrate to release the stress due to the increase of oxygen content and volume.

Volatile, Fluorine-Free β-Ketoiminate Precursors for MOCVD Growth of Lanthanide Oxide Thin Films

2000 ◽  
Vol 623 ◽  
Author(s):  
N.L. Edleman ◽  
J.A. Belot ◽  
J.R. Babcock ◽  
A.W. Metz ◽  
M.V. Metz ◽  
...  
Keyword(s):  
Thin Films ◽  
Materials Science ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Oxide Thin Films ◽  
Lanthanide Oxide ◽  
Mocvd Growth ◽  
Organic Complexes ◽  
Metal Organic ◽  
Science Community

AbstractLanthanide oxide thin films are of increasing scientific and technological interest to the materials science community. A new class of fluorine-free, volatile, low-melting lanthanide precursors for the metal-organic chemical vapor deposition (MOCVD) of these films has been developed. Initial results from a full synthetic study of these lanthanide-organic complexes are detailed.

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