Multifunctional zinc oxide thin films for high-performance UV photodetectors and nitrogen dioxide gas sensors

RSC Advances ◽  
2016 ◽  
Vol 6 (31) ◽  
pp. 25641-25650 ◽  
Author(s):  
S. K. Shaikh ◽  
V. V. Ganbavle ◽  
S. I. Inamdar ◽  
K. Y. Rajpure
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Nitrogen Dioxide ◽  
Gas Sensor ◽  
Gas Sensors ◽  
High Performance ◽  
Zno Thin Film ◽  
Uv Photodetector ◽  
Uv Photodetectors

Multifunctional use of ZnO thin film as NO2 gas sensor and UV photodetector.

The Controllable Flexible Features of ZnO Thin Film Gas Sensor

2011 ◽  
Vol 335-336 ◽  
pp. 478-482 ◽  
Author(s):  
Xin Liang Cao
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Gas Sensor ◽  
Gas Sensors ◽  
Gas Sensing ◽  
Zno Thin Film ◽  
Preparation Methods

For different gas sensing, the preparation of Zinc Oxide (ZnO) thin film gas sensor has its particularity. In this paper, three kinds of preparation methods, fitting for CO and methane and CO2 sensing, are introduced. Moreover, the sensitivity is respectively analyzed as gas sensors. The reference is provided for the preparation and applications of ZnO thin film gas sensor.

Optimization of Zinc Oxide Thin Films for Silicon Surface Acoustic Wave Resonator Applications

2012 ◽  
Vol 518-523 ◽  
pp. 3772-3779 ◽  
Author(s):  
Fatini Sidek ◽  
Anis Nurashikin Nordin ◽  
Raihan Othman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Integrated Circuit ◽  
High Performance ◽  
Rf Sputtering ◽  
Zno Thin Film ◽  
Taguchi Optimization ◽  
Saw Resonators

High quality ZnO thin films are required to produce CMOS SAW resonators operating with low losses and high Q. This work intends to develop high performance CMOS SAW resonators through optimization of both the quality of the ZnO and the design of the SAW resonator. Zinc oxide was chosen for this work as the piezoelectric material due to its superior acoustic propagation properties and compatibility with integrated circuit fabrication techniques. ZnO has demonstrated good performance characteristics for a variety of piezoelectric devices. For optimization of the quality of the deposited ZnO thin film, different RF-sputtering conditions will be used to investigate which condition produces the best piezoelectric quality of the ZnO thin film. The experiments were carried using Taguchi optimization method, which studies a large number of variables with a small number of experiments.

Densification process and mechanism of solution-processed amorphous indium zinc oxide thin films for high-performance thin film transistors

2019 ◽  
Vol 12 (7) ◽  
pp. 071004 ◽  
Author(s):  
Jong-Baek Seon ◽  
Yong Hyun Cho ◽  
Won Hyung Lee ◽  
Jun-Hee Lee ◽  
Youn Sang Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Densification Process ◽  
Oxide Thin Films ◽  
Solution Processed ◽  
Indium Zinc Oxide

Stability Studies on Optical and Structure Properties of Zinc Oxide Thin Films Exposed to Different Environment

2013 ◽  
Vol 667 ◽  
pp. 549-552
Author(s):  
A.S.M. Rodzi ◽  
Mohamad Hafiz Mamat ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Absorption Coefficient ◽  
Near Infrared ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Films ◽  
Zno Thin Film ◽  
Oxide Thin Films

The properties of zinc oxide thin films were prepared by sol-gel spin-coating method have been presented. This study based on optical and electrical properties of ZnO thin film. The effects of annealing temperatures that exposed with two environments properties have been investigated. Environments exposed in room (27°C) and hot (80°C) temperatures which are stored by various days. Solution preparation, thin film deposition and characterization process were involved in this project. The ZnO films were characterized using UV-Vis-NIR spectrophotometer for optical properties. From that equipment, the percentage of transmittance (%) and absorption coefficient spectra were obtained. With two environments showed have different absorption coefficient are reveal and all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. From SEM investigations the surface morphology of ZnO thin film shows the particles size become smaller and denser in hot temperatures while in room temperatures have porosity between particles.

Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique

2021 ◽  
Vol 43 (3) ◽  
pp. 253-253
Author(s):  
Mehmet zkan Mehmet zkan ◽  
Sercen Sadik Erdem Sercen Sadik Erdem
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Glass Substrate ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Thermionic Vacuum Arc

In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.

Thin film combustible gas sensors based on Zinc Oxide

2001 ◽  
Vol 666 ◽  
Author(s):  
Patrícia Nunes ◽  
Elvira Fortunato
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Gas Sensors ◽  
Operating Temperature ◽  
Zno Thin Films ◽  
Gas Concentration ◽  
High Electrical Resistivity ◽  
Combustible Gas ◽  
Sensitivity Tests

ABSTRACTSensitivity tests to reductive gases such as methane, hydrogen and ethane were performed on zinc oxide (ZnO) thin films. The highest value of sensitivity was obtained for the film with a high electrical resistivity and a low thickness. The variation of the operating temperature of the film leads to a significant change in the sensitivity of the sensor with an ideal operating temperature dependence of the gas used. The sensitivity of the ZnO thin films changes linear with the increase of the gas concentration. However these films seem to be more appropriated for the detection of hydrogen following by methane and than for ethane since the value of sensitivity obtained are higher and its variation with the gas concentration more pronounced.

Interfacial modifying layer-driven high-performance organic thin-film transistors and their nitrogen dioxide gas sensors

2017 ◽  
Vol 49 ◽  
pp. 334-339 ◽  
Author(s):  
Xinming Zhuang ◽  
Wei Huang ◽  
Shijiao Han ◽  
Yiming Jiang ◽  
Huajing Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Nitrogen Dioxide ◽  
Gas Sensors ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

scholarly journals Effect of Halogen Doping on Optical Properties for ZnO Thin Film Prepared by Thermal Oxidation

2015 ◽  
Vol 61 ◽  
pp. 149-161
Author(s):  
Wael Abdullah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Thermal Oxidation ◽  
Zinc Acetate Dihydrate ◽  
Precursor Solution ◽  
Zno Thin Film ◽  
Oxide Thin Films ◽  
Glass Substrates

Undoped and halogen-doped zinc oxide thin films are prepared by the thermal oxidation process. Zinc acetate dihydrate, ethanol, and Diethanolamine are used as precursor, solvent, and stabilizer, respectively. In the case of ZnO:Hal. dopant Ammonium chloride NH4Cl 99%, Benzene Bromide C6H5Br, or Benzene Iodide C6H5I for making dopant ZnO thin film with Cl, Br, I respectively is added to the precursor solution with an atomic percentage equal to 2-10.% hal. The transparent solution sprayed onto glass substrates, and are transformed into ZnO upon annealing at 500°C. XRD spectra of ZnO thin films, and optical properties of them as a function of halogen content have been investigated using U.V spectroscopy ( transmittance , refractive index, extinction coefficient and energy band gap ) for undoped and halogen-doped zinc oxide thin films.

Numerical modeling and performance analysis of zinc oxide (ZnO) thin-film based gas sensor

2018 ◽  
Author(s):  
Deepak Punetha ◽  
Rashmi Ranjan ◽  
Saurabh Kumar Pandey
Keyword(s):  
Thin Film ◽  
Numerical Modeling ◽  
Zinc Oxide ◽  
Performance Analysis ◽  
Gas Sensor ◽  
Zno Thin Film ◽  
And Performance
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