Stability of graphene-based heterojunction solar cells

The long-term environmental stability and degradation of graphene-based heterojunction solar cells under different atmospheric conditions such as air, humidity, temperature, and light illumination for commercial applications are discussed.

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Achieving over 4% efficiency for SnS/CdS thin-film solar cells by improving the heterojunction interface quality

Journal of Materials Chemistry A ◽

10.1039/d0ta06937j ◽

2020 ◽

Vol 8 (39) ◽

pp. 20658-20665 ◽

Cited By ~ 2

Author(s):

Jae Yu Cho ◽

SeongYeon Kim ◽

Raju Nandi ◽

Junsung Jang ◽

Hee-Sun Yun ◽

...

Keyword(s):

Thin Film ◽

Solar Cells ◽

Vapor Transport ◽

Thin Film Solar Cells ◽

Interface Quality ◽

Heterojunction Solar Cells ◽

Term Stability ◽

Long Term Stability ◽

Cds Thin Film

The highest efficiency of 4.225% for vapor-transport-deposited SnS absorber/CdS heterojunction solar cells with good long-term stability over two years is achieved.

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Photoelectron Spectroscopy Measurements of Valence Band Discontinuities for a-Si:H/c-Si Heterojunction Solar Cells

MRS Proceedings ◽

10.1557/proc-1153-a10-03 ◽

2009 ◽

Vol 1153 ◽

Author(s):

Tetsuya Kaneko ◽

Michio Kondo

Keyword(s):

Solar Cells ◽

Valence Band ◽

Photoelectron Spectroscopy ◽

Uv Light ◽

Thin Layers ◽

Level Shift ◽

Band Offset ◽

Light Illumination ◽

Valence Band Offset ◽

Heterojunction Solar Cells

AbstractThe valence band discontinuity (offset) between a-Si:H-based intrinsic thin layers and c-Si substrates was estimated using ultraviolet photoelectron spectroscopy (UPS) in combination with x-ray photoelectron spectroscopy (XPS). A core level shift measured by XPS was utilized to correct the shifts of UPS spectra after UV light illumination. Thin films of a-Si:H, a-SiO:H and a-SiC:H were prepared by plasma-enhanced chemical vapor deposition (PECVD) using SiH4, CO2 and CH4 gases. The valence band offset of 0.11 eV was obtained from the a-Si:H/c-Si heterojunction, whereas 0.27 eV was obtained from the a-SiO:H/c-Si heterojunction. Moreover, the valence band offset between the c-Si and the a-SiC:H deposited with [CH4]=10 SCCM and [CH4]=20 SCCM were determined to be 0.25 eV and 0.36 eV, respectively. The c-Si-based heterojunction solar cells with estimated i layer in this study were fabricated, reduction of FF with increasing the valence band offset was observed. It is likely that increasing of the valence band offset contributes to the reduction of FF.

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Long term stability of air processed inkjet infiltrated carbon-based printed perovskite solar cells under intense ultra-violet light soaking

Journal of Materials Chemistry A ◽

10.1039/c6ta10605f ◽

2017 ◽

Vol 5 (10) ◽

pp. 4797-4802 ◽

Cited By ~ 44

Author(s):

Syed Ghufran Hashmi ◽

Armi Tiihonen ◽

David Martineau ◽

Merve Ozkan ◽

Paola Vivo ◽

...

Keyword(s):

Solar Cells ◽

Perovskite Solar Cells ◽

Ultra Violet ◽

Light Illumination ◽

Ultra Violet Light ◽

Term Stability ◽

Long Term Stability ◽

Violet Light ◽

Carbon Based

The long term stability of air processed inkjet infiltrated carbon based perovskite solar cells (CPSCs) is investigated under intense ultra-violet light soaking equivalent to 1.5 Sun UV light illumination.

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Effect of Transparent Electrode on the Performance of Bulk Heterojunction Solar Cells

MRS Proceedings ◽

10.1557/proc-1270-hh14-23 ◽

2010 ◽

Vol 1270 ◽

Author(s):

A.A. Damitha T Adikaari ◽

Joe Briscoe ◽

Steve Dunn ◽

David Carey ◽

Ravi Silva

Keyword(s):

Solar Cells ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Bulk Heterojunction ◽

Short Circuit ◽

Open Circuit ◽

Fullerene Derivative ◽

Atmospheric Conditions ◽

Heterojunction Solar Cells ◽

Bulk Heterojunction Solar Cells

AbstractWe present a performance comparison of polythiophene/fullerene derivative bulk heterojunction solar cells fabricated on fluorinated tin oxide (FTO) and indium tin oxide (ITO) in the presence and absence of the commonly used poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) hole extraction layer. From a potential commercial perspective the performance of cheaper and more readily available FTO compares well with the more expensive ITO in terms of measured device efficiency (FTO:2.8 % and ITO:3.1%). The devices show similar fill factors (FTO:63% and ITO:64%) with the same open circuit voltage of 0.6 V. The short circuit current density is lower for FTO devices at 7.5 mA/cm2 which compares with 8.0 mA/cm2 for ITO; a behaviour that is mainly attributed to the reduced optical transmission of the FTO layer. Importantly, these devices were part fabricated and wholly characterized under atmospheric conditions. The quoted device performance is the best reported for FTO based bulk heterojunction systems in the absence of the highly acidic PEDOT:PSS hole extraction layer, which is believed to degrade conductive oxides.

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