scholarly journals Large-area scanning probe nanolithography facilitated by automated alignment of probe arrays

RSC Advances ◽  
2015 ◽  
Vol 5 (75) ◽  
pp. 61402-61409 ◽  
Author(s):  
Shuai Wang ◽  
Joseph Hosford ◽  
William P. Heath ◽  
Lu Shin Wong

A method for the automated alignment of scanning probe polymer pen arrays is reported. This system enables nanolithography over large (cm2) areas with high uniformity, with any misalignment being ≤0.0003°.

2007 ◽  
Vol 989 ◽  
Author(s):  
Nader Safavian ◽  
Y. Vygranenko ◽  
J. Chang ◽  
Kyung Ho Kim ◽  
J. Lai ◽  
...  

AbstractBecause of the inherent desired material and technological attributes such as low temperature deposition and high uniformity over large area, the amorphous silicon (a-Si:H) technology has been extended to digital X-ray diagnostic imaging applications. This paper reports on design, fabrication, and characterization of a MIS-type photosensor that is fully process-compatible with the active matrix a-Si:H TFT backplane. We discuss the device operating principles, along with measurement results of the transient dark current, linearity and spectral response.


Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 812
Author(s):  
Dung-Sheng Tsai ◽  
Ping-Yu Chiang ◽  
Meng-Lin Tsai ◽  
Wei-Chen Tu ◽  
Chi Chen ◽  
...  

This work demonstrates a self-powered and broadband photodetector using a heterojunction formed by camphor-based chemical vaper deposition (CVD) bilayer graphene on p-Si substrates. Here, graphene/p-Si heterostructures and graphene layers serve as ultra-shallow junctions for UV absorption and zero bandgap junction materials (<Si bandgap (1.1 eV)) for long-wave near-infrared (LWNIR) absorption, respectively. According to the Raman spectra and large-area (16 × 16 μm2) Raman mapping, a low-defect, >95% coverage bilayer and high-uniformity graphene were successfully obtained by camphor-based CVD processes. Furthermore, the carrier mobility of the camphor-based CVD bilayer graphene at room temperature is 1.8 × 103 cm2/V·s. Due to the incorporation of camphor-based CVD graphene, the graphene/p-Si Schottky junctions show a good rectification property (rectification ratio of ~110 at ± 2 V) and good performance as a self-powered (under zero bias) photodetector from UV to LWNIR. The photocurrent to dark current ratio (PDCR) value is up to 230 at 0 V under white light illumination, and the detectivity (D*) is 8 × 1012 cmHz1/2/W at 560 nm. Furthermore, the photodetector (PD) response/decay time (i.e., rise/fall time) is ~118/120 μs. These results support the camphor-based CVD bilayer graphene/Si Schottky PDs for use in self-powered and ultra-broadband light detection in the future.


2006 ◽  
Vol 505-507 ◽  
pp. 7-12 ◽  
Author(s):  
Gerd Jäger ◽  
T. Hausotte ◽  
Eberhard Manske ◽  
H.-J. Büchner ◽  
R. Mastylo ◽  
...  

The paper describes the operation of a high-precision wide scale three-dimensional nanopositioning and nanomeasuring machine (NPM-Machine) having a resolution of 0,1 nm over the positioning and measuring range of 25 mm x 25 mm x 5 mm. The NPM-Machine has been developed by the Technische Universität Ilmenau and manufactured by the SIOS Meßtechnik GmbH Ilmenau. The machines are operating successfully in several German and foreign research institutes including the Physikalisch-Technische Bundesanstalt (PTB). The integration of several, optical and tactile probe systems and scanning force microscopes makes the NPM-Machine suitable for various tasks, such as large-area scanning probe microscopy, mask and water inspection, circuit testing as well as measuring optical and mechanical precision work pieces such as micro lens arrays, concave lenses, mm-step height standards.


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