Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substrates

2014 ◽  
Vol 23 (7) ◽  
pp. 076103 ◽  
Author(s):  
Dang-Chao Wang ◽  
Yu-Ming Zhang
Keyword(s):  
Epitaxial Graphene ◽  
Scanning Probe ◽  
Large Area ◽  
Probe Analysis

Large-Area and High-Quality Epitaxial Graphene on Off-Axis SiC Wafers

ACS Nano ◽  
2012 ◽  
Vol 6 (7) ◽  
pp. 6075-6082 ◽  
Author(s):  
Abdelkarim Ouerghi ◽  
Mathieu G. Silly ◽  
Massimiliano Marangolo ◽  
Claire Mathieu ◽  
Mahmoud Eddrief ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
Large Area ◽  
High Quality

Dry Techniques for Epitaxial Graphene Transfer

2010 ◽  
Vol 1259 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Glenn G. Jernigan ◽  
James C. Culbertson ◽  
...  
Keyword(s):  
Carrier Density ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Wafer Scale ◽  
Thermal Release ◽  
Graphene Films ◽  
Graphene Transfer ◽  
Van Der Pauw

AbstractEpitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. Van der Pauw devices fabricated from C-face EG transferred to SiO2 gave similar mobility values and up to three fold reductions in carrier density in comparison to devices fabricated on as-grown material.

Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 633-636 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
James C. Culbertson ◽  
Glenn G. Jernigan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Wafer Scale ◽  
Transfer Processes ◽  
Thermal Release ◽  
Graphene Films ◽  
High Carrier ◽  
The Impact

Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit high carrier mobilities, in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. We will report on the impact that these transfer processes has upon the electrical properties of the transferred EG films.

scholarly journals Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Debora Pierucci ◽  
Hugo Henck ◽  
Carl H. Naylor ◽  
Haikel Sediri ◽  
Emmanuel Lhuillier ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Molybdenum Disulphide ◽  
Van Der Waals Heterostructures

scholarly journals Large-area scanning probe nanolithography facilitated by automated alignment of probe arrays

RSC Advances ◽  
2015 ◽  
Vol 5 (75) ◽  
pp. 61402-61409 ◽  
Author(s):  
Shuai Wang ◽  
Joseph Hosford ◽  
William P. Heath ◽  
Lu Shin Wong
Keyword(s):  
Scanning Probe ◽  
Large Area ◽  
High Uniformity ◽  
Automated Alignment

A method for the automated alignment of scanning probe polymer pen arrays is reported. This system enables nanolithography over large (cm2) areas with high uniformity, with any misalignment being ≤0.0003°.

scholarly journals Surface Transport Properties of Pb-Intercalated Graphene

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7706
Author(s):  
Markus Gruschwitz ◽  
Chitran Ghosal ◽  
Ting-Hsuan Shen ◽  
Susanne Wolff ◽  
Thomas Seyller ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Defects ◽  
Interface Layer ◽  
Epitaxial Graphene ◽  
Buffer Layers ◽  
Scanning Tunneling ◽  
Large Area ◽  
Tunneling Microscopy ◽  
Surface Transport ◽  
Static Distortion

Intercalation experiments on epitaxial graphene are attracting a lot of attention at present as a tool to further boost the electronic properties of 2D graphene. In this work, we studied the intercalation of Pb using buffer layers on 6H-SiC(0001) by means of electron diffraction, scanning tunneling microscopy, photoelectron spectroscopy and in situ surface transport. Large-area intercalation of a few Pb monolayers succeeded via surface defects. The intercalated Pb forms a characteristic striped phase and leads to formation of almost charge neutral graphene in proximity to a Pb layer. The Pb intercalated layer consists of 2 ML and shows a strong structural corrugation. The epitaxial heterostructure provides an extremely high conductivity of σ=100 mS/□. However, at low temperatures (70 K), we found a metal-insulator transition that we assign to the formation of minigaps in epitaxial graphene, possibly induced by a static distortion of graphene following the corrugation of the interface layer.

Nanometrology – Nanopositioning- and Nanomeasuring Machine with Integrated Nanopobes

2006 ◽  
Vol 505-507 ◽  
pp. 7-12 ◽  
Author(s):  
Gerd Jäger ◽  
T. Hausotte ◽  
Eberhard Manske ◽  
H.-J. Büchner ◽  
R. Mastylo ◽  
...  
Keyword(s):  
Scanning Probe Microscopy ◽  
Three Dimensional ◽  
Scanning Probe ◽  
Large Area ◽  
Circuit Testing ◽  
Measuring Range ◽  
Research Institutes ◽  
Scanning Force ◽  
Wide Scale ◽  
Tactile Probe

The paper describes the operation of a high-precision wide scale three-dimensional nanopositioning and nanomeasuring machine (NPM-Machine) having a resolution of 0,1 nm over the positioning and measuring range of 25 mm x 25 mm x 5 mm. The NPM-Machine has been developed by the Technische Universität Ilmenau and manufactured by the SIOS Meßtechnik GmbH Ilmenau. The machines are operating successfully in several German and foreign research institutes including the Physikalisch-Technische Bundesanstalt (PTB). The integration of several, optical and tactile probe systems and scanning force microscopes makes the NPM-Machine suitable for various tasks, such as large-area scanning probe microscopy, mask and water inspection, circuit testing as well as measuring optical and mechanical precision work pieces such as micro lens arrays, concave lenses, mm-step height standards.

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