A robust ionic liquid–polymer gate insulator for high-performance flexible thin film transistors

2015 ◽  
Vol 3 (17) ◽  
pp. 4239-4243 ◽  
Author(s):  
Jieun Ko ◽  
Su Jeong Lee ◽  
Kyongjun Kim ◽  
EungKyu Lee ◽  
Keon-Hee Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Ionic Liquid ◽  
Mechanical Strength ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
High Performance ◽  
Chemical Interaction ◽  
Gate Insulator ◽  
Liquid Polymer ◽  
Ionic Liquid Polymer

An ionic liquid–polymer (IL–PVP) dielectric layer with robust mechanical strength and flexibility was fabricated by a chemical interaction between the ionic liquid and polymer. This dielectric layer allowed operation of flexible thin film transistors with high performance.

High Performance Amorphous In–Ga–Zn–O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator

2020 ◽  
Vol 9 (2) ◽  
pp. 025002
Author(s):  
Ployrung Kesorn ◽  
Juan Paolo Bermundo ◽  
Toshiaki Nonaka ◽  
Mami N. Fujii ◽  
Yasuaki Ishikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Insulator ◽  
Solution Processed ◽  
High K

Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors

2017 ◽  
Vol 19 (23) ◽  
pp. 15521-15529 ◽  
Author(s):  
Sohee Kim ◽  
Taewook Ha ◽  
Sungmi Yoo ◽  
Jae-Won Ka ◽  
Jinsoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Surface Treatment ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Self Assembled Monolayers ◽  
Organic Thin Film ◽  
Assembled Monolayers

We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST).

High Performance Thin Film Transistors for Scanner Applications

1990 ◽  
Vol 182 ◽  
Author(s):  
B.-C. Hseih ◽  
G.A. Hawkins ◽  
S. Ashok
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Amorphous Silicon Film

AbstractWe report on the characteristics of polycrystalline silicon (polysilicon) thin film transistors (TFTs) fabricated with low temperature crystallized LPCVD amorphous silicon film as an active layer and plasma enhanced chemical vapor deposition (PECVD) SiO2 as a gate insulator. High performance transistor characteristics are achieved, even though no process temperature exceeds 600°C. No threshold drift has been observed. As a result, these devices are highly suitable for application to image scanners as well as flat panel displays.

Crosslinked polymer-mixture gate insulator for high-performance organic thin-film transistors

2016 ◽  
Vol 36 ◽  
pp. 171-176 ◽  
Author(s):  
Yun-Seo Choe ◽  
Mi Hye Yi ◽  
Ji-Heung Kim ◽  
Gi-Seong Ryu ◽  
Yong-Young Noh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Polymer Mixture ◽  
Organic Thin Film ◽  
Crosslinked Polymer
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