scholarly journals A sensitive and versatile method for characterization of protein-mediated transformations of quantum dots

The Analyst ◽  
2016 ◽  
Vol 141 (8) ◽  
pp. 2574-2580 ◽  
Author(s):  
Magdalena Matczuk ◽  
Joanna Legat ◽  
Andrei R. Timerbaev ◽  
Maciej Jarosz

A CE-ICP-MS hyphenated platform was developed to satisfy many expectations for a simple, highly sensitive, and high-throughput monitoring tool for the characterization of the quantum dot–protein conjugates in blood compartments.

Author(s):  
Oleksandr Stroyuk ◽  
Oleksandra Raievska ◽  
Stefan Langner ◽  
Christian Kupfer ◽  
Anastasia Barabash ◽  
...  
Keyword(s):  

Lab on a Chip ◽  
2015 ◽  
Vol 15 (1) ◽  
pp. 253-263 ◽  
Author(s):  
Hong Yan Song ◽  
Ten It Wong ◽  
Anton Sadovoy ◽  
Lin Wu ◽  
Ping Bai ◽  
...  

Schematic representation of our immunodetection set-up, which uses a Nikon Ti Eclipse microscope to detect the plasmonic nanochip with quantum dot based bioassay established.


2009 ◽  
Vol 92 (6) ◽  
pp. 1773-1779 ◽  
Author(s):  
Robin C Boro ◽  
K Vikas Singh ◽  
C Raman Suri

Abstract The generation of specific and sensitive antibodies against small molecules is greatly dependent upon the characteristics of the hapten-protein conjugates. In this study, we report a new fluorescence-based method for the characterization of hapten-protein conjugates. The method is based on an effect promoted by hapten-protein conjugation density upon the fluorescence intensity of the intrinsic tryptophan chromophore molecules of the protein. The proposed methodology is applied to quantify the hapten-protein conjugation density for two different chlorophenoxyacetic acid pesticides, 2,4-dichlorophenoxyacetic acid (2,4-D) and 2,4-dichlorophenoxybutyric acid (2,4-DB), coupled to carrier protein. Highly sensitive anti-2,4-D and anti-2,4-DB antibodies were obtained using these well-characterized hapten-protein conjugates. The generated antibodies were used in an immunoassay format demonstrating inhibitory concentration (IC50) values equal to 30 and 7 ng/mL for 2,4-D and 2,4-DB, respectively. Linearity was observed in the concentration range between 0.1500 ng/mL with LODs around 4 and 3 ng/mL for 2,4-D and 2,4-DB, respectively, in standard water samples. The proposed method was successfully applied for the determination of the extent of hapten-protein conjugation to produce specific antibodies for immunoassay development against pesticides.


2017 ◽  
Vol 9 (6) ◽  
pp. 1011-1017 ◽  
Author(s):  
Zhimin Liu ◽  
Fang Zhang ◽  
Lin Cui ◽  
Kang Wang ◽  
Haijun Zhan

A novel electrochemiluminescence sensing platform for the sensitive detection of chlorpromazine (CPZ) was fabricated based on a Ru(bpy)32+/carbon quantum dots/gelatin composite film.


Nanoscale ◽  
2018 ◽  
Vol 10 (21) ◽  
pp. 10182-10189 ◽  
Author(s):  
Xiang Liu ◽  
Wenjian Kuang ◽  
Haibing Ni ◽  
Zhi Tao ◽  
Qianqian Huang ◽  
...  

Although recent breakthroughs in reported graphene-based phototransistors with embedded quantum dots (QDs) have definitely been astonishing, there are still some obstacles in their practical use with regard to their electrical and optical performances.


2007 ◽  
Vol 1017 ◽  
Author(s):  
Seth Martin Hubbard ◽  
Ryne Raffaelle ◽  
Ross Robinson ◽  
Christopher Bailey ◽  
David Wilt ◽  
...  

AbstractThe growth of InAs quantum dots (QDs) by organometallic vapor phase epitaxy (OMVPE) for use in GaAs based photovoltaics devices was investigated. Growth of InAs quantum dots was optimized according to their morphology and photoluminescence using growth temperature and V/III ratio. The optimized InAs QDs had sizes near 7×40 nm with a dot density of 5(±0.5)×1010 cm-2. These optimized QDs were incorporated into GaAs based p-i-n solar cell structures. Cells with single and multiple (5x) layers of QDs were embedded in the i-region of the GaAs p-i-n cell structure. An array of 1 cm2 solar cells was fabricated on these wafers, IV curves collected under 1 sun AM0 conditions, and the spectral response measured from 300-1100 nm. The quantum efficiency for each QD cell clearly shows sub-bandgap conversion, indicating a contribution due to the QDs. Unfortunately, the overarching result of the addition of quantum dots to the baseline p-i-n GaAs cells was a decrease in efficiency. However, the addition of thin GaP strain compensating layers between the QD layers, was found to reduce this efficiency degradation and significantly enhance the subgap conversion in comparison to the un-compensated quantum dot cells.


2019 ◽  
Vol 6 (5) ◽  
pp. 1457-1465 ◽  
Author(s):  
Zhao Zhang ◽  
Duo Zhang ◽  
Cen Shi ◽  
Wei Liu ◽  
Lanhua Chen ◽  
...  

3,4-Hydroxypyridinone-modified carbon quantum dots were prepared via a post-modification approach by introducing a specific molecule into the CQD surface, and applied to the field of rapid detection of uranyl ions.


2019 ◽  
Vol 584 ◽  
pp. 113387
Author(s):  
Joanna Kruszewska ◽  
Magdalena Matczuk ◽  
Sandra Skorupska ◽  
Ilona Grabowska-Jadach ◽  
Emma Pérez Hernández ◽  
...  
Keyword(s):  

RSC Advances ◽  
2015 ◽  
Vol 5 (28) ◽  
pp. 21675-21680 ◽  
Author(s):  
Yanmei Zhang ◽  
Xinjian Yang ◽  
Zhiqiang Gao

A simple and highly sensitive carbon quantum dot based sensing platform for glucose and hydrogen peroxide.


2018 ◽  
Vol 27 (01n02) ◽  
pp. 1840003
Author(s):  
Barath Parthasarathy ◽  
Pial Mirdha ◽  
Jun Kondo ◽  
Faquir Jain

In this paper, we propose a structure using four layers of quantum dots on crystalline silicon. The quantum dots site-specifically self-assembled in the p-type material due to the electrostatic attraction. This quantum dot super lattice (QDSL) structure will be constructed using a mixed layer of Germanium (Ge) and Silicon (Si) dots. Atomic Force Microscopy results will show the accurate stack height formed from individual and multi stacked layers. This is the first novel characterization of 4 layers of 2 separate self assemblies. This was also applied to a quantum dot gate field effect transistor (QDG-FET).


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