Microstructure development of sol-gel derived epitaxial LiNbO3 thin films

1995 ◽  
Vol 10 (10) ◽  
pp. 2564-2572 ◽  
Author(s):  
Keiichi Nashimoto ◽  
Michael J. Cima ◽  
Paul C. McIntyre ◽  
Wendell E. Rhine

Film growth and microstructural evolution were investigated for sol-gel derived LiNbO3 thin films deposited on lattice-matched single-crystal substrates. Epitaxial LiNbO3 films of about 100 nm nominal thickness were prepared by spin coating a solution of the lithium niobium ethoxide on sapphire (0001) substrates and annealing at 400 °C or 700 °C in a humidified oxygen atmosphere. These films exhibited an epitaxial relationship with the substrate of the type LiNbO3 (0001) || α-Al2O3 (0001) and LiNbO3 [100] || α-Al2O3 [100] as determined by x-ray pole figure analysis. Transmission electron microscopy indicated the epitaxial films annealed at 400 °C consisted of slightly misoriented ∼5 nm subgrains and of numerous ∼10 nm enclosed pores. The microstructure and orientation development of these films was consistent with a heteroepitaxial nucleation and growth mechanism, in which epitaxial nuclei form at the substrate surface and grow upward into an amorphous and porous intermediate film: Epitaxial films annealed at 700 °C contained larger 150-200 nm subgrains and pinholes. Misorientations between adjacent subgrains appeared to be significantly smaller in films annealed at 700 °C than those in films annealed at 400 °C. Hydrolysis of the alkoxide precursor solution prior to spin coating promoted the development of polycrystalline films on single-crystal sapphire substrates. Infrared spectra and thermal analysis indicated that, independent of the degree of the solution hydrolysis, nucleation of LiNbO3 was immediately preceded by decomposition of an amorphous carbonate intermediate phase.

1995 ◽  
Vol 401 ◽  
Author(s):  
Kiyotaka Wasa ◽  
Toshifumi Sato ◽  
Hideaki Adachi ◽  
Kentaro Setsune ◽  
S. Trolier-McKinstry ◽  
...  

AbstractThin films of perovskite Pb–Ti–O3 families were heteroepitaxially grown by sputtering on (0001)sapphire and/or (001)SrTiO (ST). These epitaxial films contained microstructures, although X–ray diffraction analysis suggested formation of single crystal phase with three dimentional crystal orientation. Their microstructures were studied by the electron microscopy, atomic force microscopy, and spectroscopic ellipsometry so as to find factors which influence the formation of the microstructure. It was found that the orientation of the substrate surface and the chemical composition of adatoms during initial film growth strongly affected the formation of the microstructures. Sputtered PbTiO3 (PT) thin films under a stoichiometric condition on a miscut(001) ST(miscut 1.7 degree) realized the growth of continuous single crystal thin films of 10–100nm thick with extremely smooth surface with surface roughness less than 3nm. Deposition on a miscut substrate under a stoichiometric condition is essential to make continuous thin films of perovskite of single crystal phase.


1993 ◽  
Vol 321 ◽  
Author(s):  
Chianping Ye ◽  
Paul Baude ◽  
Dennis L. Polla

ABSTRACTThin LiTaO3 films were prepared by spin coating of polymerized sol-gel precursor solution. Films have been deposited on single crystal silicon substrate, Ti/Pt or SiO2 coated silicon substrate. Films were characterized by x-ray diffraction, dielectric and pyroelectric Measurements. High Curie temperature (above 550 °C) was assumed for LiTaO3 thin films from the temperature dependence of dielectric constant. Replacing 35% of tantalum by titanium atoms in the LiTaO3 precursor solution has resulted the thin films with Curie temperature of 330 °C. The lower Curie temperature leads to the larger pyroelectric coefficient at room-temperature, which is more than double that of the undoped LiTaO3 thin films. The dielectric, pyroelectric, and ferroelectric properties have been compared to the single crystal LiTaO3 and ceramic Li0.91Ta0.73Ti0.36O3. LiTaO3 thin films are available by sol-gel process at low temperature, and their properties may possibly be controlled by varying the composition of the sol-gel precursor solution.


1990 ◽  
Vol 202 ◽  
Author(s):  
Keiichi Nashimoto ◽  
Michael J. Cima ◽  
Wendell E. Rhine

ABSTRACTThe evolution of the microstructure of sol-gel derived LiNbO3 thin films was investigated to understand the growth of epitaxial films. LiNbO3 films were prepared from a precursor solution of lithium ethoxide and niobium pentaethoxide. Prehydrolysis promoted the development of polycrys-talline LiNbO3 films, whereas nonhydrolysis produced solid-state epitaxial growth of LiNbO3 films on sapphire substrates. Although the films looked smooth after annealing at 400°C, the morphology of the films changed, depending on substrates and precursors, due to grain growth at high annealing temperature. Prehydrolysis of the alkoxides caused a decrease in the temperature at which grain growth occurred, whereas the film prepared from the nonhydrolyzed precursor on a sapphire substrate showed denser texture and contained abnormally large domains that appeared to be single phase.


1998 ◽  
Vol 547 ◽  
Author(s):  
Jonathan S. Morrell ◽  
Ziling B. Xue ◽  
Eliot D. Specht ◽  
David B. Beach

AbstractEpitaxial films of lanthanum gallate, praseodymium gallate, and neodymium gallate were prepared on [100] strontium titanate and [100] lanthanum aluminate single crystal substrates using solution techniques. The solutions employed were mixed-metal methoxyethoxides in 2-methoxyethanol. Films were prepared by spin-coating with a partially hydrolyzed solution, followed by firing at 850 °C for 20 minutes in air. Theta/2-theta scans revealed only [h00] reflections and omega scans (rocking curves) indicated good out-of-plane orientation. Pole figures and phi scans revealed good in-plane orientation and a [100] || [100] epitaxial relationship between the film and the substrate.


1993 ◽  
Vol 8 (10) ◽  
pp. 2634-2643 ◽  
Author(s):  
H.L.M. Chang ◽  
T.J. Zhang ◽  
H. Zhang ◽  
J. Guo ◽  
H.K. Kim ◽  
...  

TiO2 thin films have been deposited on sapphire (0001) substrates under various conditions by metal-organic chemical vapor deposition. The structural properties of the deposited films were characterized by x-ray diffraction and transmission electron microscopy. The important growth parameters were found to be the deposition temperature and the deposition rate. The ranges studied for the two parameters were 400 to 850 °C and 10 to 120 Å/min, respectively. Depending on the growth conditions, most of the deposited films were either single-phase anatase or rutile, or a mixture of the two. These films were all epitaxial, but none of them were single-crystal films. Three distinct epitaxial relationships were observed between the films and the substrates, and, depending on the growth conditions, a deposited film can contain one, two, or all three of them. The fact that the films we obtained, although epitaxial, were never single crystal is explained based on the consideration of the difference in the rotational symmetries of the substrate surface and the film growth plane. We believe that it should be generally true that, in heteroepitaxial growth, a true single-crystal film can never be obtained as long as the point symmetry group of the substrate surface is not a subgroup of that of the film growth plane.


2013 ◽  
Vol 701 ◽  
pp. 167-171 ◽  
Author(s):  
Kevin Alvin Eswar ◽  
Azlinda Ab Azlinda ◽  
F.S. Husairi ◽  
M. Rusop ◽  
Saifollah Abdullah

Zinc acetate dehydrate as starting material along with diethanolamine as stabilizer, and isopropyl as a solvent were used to synthesis ZnO thin films in different low molarities. Sol-gel spin coating method was used in depositing ZnO on porous silicon substrate surface. In other to prepare substrate, p-type silicon wafer was etched by dilute hydrofluoric acid to modify the surface becomes porous. Field Emission Scanning Electron Microscopy (FESEM) was employed to study the surface morphology. It is found that ZnO thin films were successfully deposited on the substrates which are composed of ZnO nanoparticles with size ~16 nm to ~22nm. Atomic Force Microscopy (AFM) was used to investigate the surface roughness of thin film. The result shows that the surface roughness is increase as the increases of molarities. Photoluminescence (PL) spectra were done in range of 350 nm to 800 nm. The result shows peaks belonging to ZnO, ZnO defects, and porous silicon respectively are appeared.


2006 ◽  
Vol 988 ◽  
Author(s):  
Eric S. Toberer ◽  
Ram Seshadri

AbstractEpitaxial thin films of Mn3O4 and ZnMn2O4 have been grown hydrothermally on (100) and (111) MgAl2O4 substrates. Film growth was characterized as a function of pH, concentration, and time and thin film X-ray diffraction revealed that the resulting films are an epitaxial continuation of the underlying spinel lattice. Reduction of these films to MnO occurred topotactically and in the case of ZnMn2O4, resulted in mesopores aligned along the <100> directions. As the films maintain an epitaxial relationship with the substrate, the mesopores are aligned macroscopically within a single crystal lattice.


1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).


2019 ◽  
Vol 7 (1) ◽  
pp. 28
Author(s):  
KOMARAIAH DURGAM ◽  
RADHA EPPA ◽  
REDDY M. V. RAMANA ◽  
KUMAR J. SIVA ◽  
R. SAYANNA ◽  
...  

Author(s):  
Atefeh Nazari Setayesh ◽  
Hassan Sedghi

Background: In this work, CdS thin films were synthesized by sol-gel method (spin coating technique) on glass substrates to investigate the optical behavior of the film. Methods: Different substrate spin coating speeds of 2400, 3000, 3600 rpm and different Ni dopant concentrations of 0 wt.%, 2.5 wt.%, 5 wt.%) were investigated. The optical properties of thin films such as refraction index, extinction coefficient, dielectric constant and optical band gap energy of the layers were discussed using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. Results: It can be deduced that substrate rotation speed and dopant concentration has influenced the optical properties of thin films. By decreasing rotation speed of the substrate which results in films with more thicknesses, more optical interferences were appeared in the results. Conclusion: The samples doped with Ni comparing to pure ones have had more optical band gap energy.


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