Variations of thermoelectric performance by electric fields in bilayer MX2 (M = W, Mo; X = S, Se)

2017 ◽  
Vol 19 (8) ◽  
pp. 5797-5805 ◽  
Author(s):  
Rui-Ning Wang ◽  
Guo-Yi Dong ◽  
Shu-Fang Wang ◽  
Guang-Sheng Fu ◽  
Jiang-Long Wang
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Electric Fields ◽  
Electronic Structures ◽  
Figure Of Merit ◽  
The Other ◽  
Thermoelectric Figure Of Merit ◽  
Two Dimensional ◽  
Thermoelectric Figure ◽  
Two Dimensional Materials

A gate is usually used to controllably tune the carrier concentrations, further modulating the electrical conductivity and Seebeck coefficient to obtain the optimum thermoelectric figure of merit in two-dimensional materials. On the other hand, it is necessary to investigate how an electric field induced by a gate affects the electronic structures, further determining the thermoelectric properties.

scholarly journals Thermoelectric Lead Telluride with ZnO Nanoparticles

2015 ◽  
Vol 16 (1) ◽  
pp. 62-67
Author(s):  
O. M. Matkivsky
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Lead Telluride ◽  
Thermoelectric Figure Of Merit ◽  
X Ray Diffraction ◽  
Thermoelectric Figure ◽  
X Ray ◽  
Zno Powder

An X-ray diffraction structural study and measurement of Seebeck coefficient (S), the electrical conductivity (σ) and thermal conductivity (χ) for Lead Telluride with nanoinclusions of ZnO. The calculated value of the specific thermoelectric power (S2σ) and thermoelectric figure of merit (ZT). It was established that the addition of ZnO powder Nanodispersed diameter grains (40-60) nm PbTe reduces the thermal conductivity of the material, and at 0.5 wt.% ZnO to an increase of lead telluride thermoelectric figure of merit to ZT≈1,3.

Carrier Pocket Engineering for the Design of Low Dimensional Thermoelectrics with High Z3DT

2000 ◽  
Vol 626 ◽  
Author(s):  
Takaaki Koga ◽  
Stephen B. Cronin ◽  
Mildred S. Dresselhaus
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Engineering Model ◽  
Thermoelectric Figure ◽  
Model Calculations ◽  
Low Dimensional ◽  
Good Agreement

ABSTRACTThe concept of carrier pocket engineering applied to Si/Ge superlattices is tested experimentally. A set of strain-symmetrized Si(20Å)/Ge(20Å) superlattice samples were grown by MBE and the Seebeck coefficient S, electrical conductivity σ, and Hall coefficient were measured in the temperature range between 4K and 400K for these samples. The experimental results are in good agreement with the carrier pocket engineering model for temperatures below 300K. The thermoelectric figure of merit for the entire superlattice, Z3DT, is estimated from the measured S and σ, and using an estimated value for the thermal conductivity of the superlattice. Based on the measurements of these homogeneously doped samples and on model calculations, including the detailed scattering mechanisms of the samples, projections are made for δ-doped and modulation-doped samples [(001) oriented Si(20Å)/Ge(20Å) superlattices] to yield Z3DT ≈ 0.49 at 300K.

scholarly journals Морфология и термоэлектрические свойства керамики твердых растворов γ-Gd-=SUB=-x-=/SUB=-Dy-=SUB=-1-x-=/SUB=-S-=SUB=-1.5-y-=/SUB=-

2020 ◽  
Vol 62 (4) ◽  
pp. 537
Author(s):  
А.В. Сотников ◽  
В.В. Баковец ◽  
Michihiro Ohta ◽  
А.Ш. Агажанов ◽  
С.В. Станкус
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Specific Surface ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Temperature Dependences

The temperature dependences of Seebeck coefficient, electrical conductivity (Т=300–873K), thermal conductivity and figure of merit (Т=300–770K) of polycrystalline samples of solid solutions based on gadolinium and dysprosium sulfides with γ-GdxDy1-xS1.49 (x=0.1, 0.2, 0.3, 0.4) composition were studied. It was established that samples morphological features, namely, the specific surface area of crystallites causing a change in the number of deformation centers determines the thermal conductivity of -GdxDy1-xS1.49, and it was found that there is an anomalous decrease in thermal conductivity for composition with х = 0.2. For this composition the lowest values of Seebeck coefficient -371 mkV/K at 873K, electrical resistivity 880 mkΩ∙m at 873K and thermal conductivity 0.68 ± 0.03 W/m·K at 770K were obtained, in this case the thermoelectric figure of merit reaches ZT = 0.23.

Thermoelectric Properties of Ni Doped P-Type BiCuSeO Oxyselenides

2014 ◽  
Vol 602-603 ◽  
pp. 906-909 ◽  
Author(s):  
Yao Chun Liu ◽  
Jun Fu Liu ◽  
Bo Ping Zhang ◽  
Yuan Hua Lin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Layer Structure ◽  
Thermoelectric Figure Of Merit ◽  
Ni Doping ◽  
Thermoelectric Figure ◽  
P Type

We report on the effect of Ni doping on the thermoelectric properties of p-type BiCuSeO oxyselenide, with layer structure composed of conductive (Cu2Se2)2-layers alternately stacked with insulating (Bi2O2)2+layers along c axis. After doping with Ni, enhanced electrical conductivity coupled with a moderate Seebeck coefficient leads to a power factor of ~231 μwm-1K-2at 873 K. Coupled to low thermal conductivity, ZT at 873 K is increased from 0.35 for pristine BiCuSeO to 0.39 for Bi0.95Ni0.05CuSeO. However, the efficiency of Ni doping in the insulating (Bi2O2)2+layer is low, and this doping only leads to a limited increase of the hole carriers concentration. Therefore Ni doped BiCuSeO has relatively low electrical conductivity which makes its thermoelectric figure of merit much lower than that of Ca, Sr, Ba and Pb doped BiCuSeO.

Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

scholarly journals Термоэлектрические свойства нанокомпозитного Bi-=SUB=-0.45-=/SUB=-Sb-=SUB=-1.55-=/SUB=-Te-=SUB=-2.985-=/SUB=- с микрочастицами SiO-=SUB=-2-=/SUB=-

2019 ◽  
Vol 53 (6) ◽  
pp. 751
Author(s):  
А.А. Шабалдин ◽  
П.П. Константинов ◽  
Д.А. Курдюков ◽  
Л.Н. Лукьянова ◽  
А.Ю. Самунин ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Conductivity ◽  
Wide Temperature Range ◽  
Figure Of Merit ◽  
Nanostructured Material ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Efficiency ◽  
Thermoelectric Figure ◽  
P Type

AbstractNanocomposite thermoelectrics based on Bi_0.45Sb_1.55Te_2.985 solid solution of p -type conductivity are fabricated by the hot pressing of nanopowders of this solid solution with the addition of SiO_2 microparticles. Investigations of the thermoelectric properties show that the thermoelectric power of the nanocomposites increases in a wide temperature range of 80–420 K, while the thermal conductivity considerably decreases at 80–320 K, which, despite a decrease in the electrical conductivity, leads to an increase in the thermoelectric efficiency in the nanostructured material without the SiO_2 addition by almost 50% (at 300 K). When adding SiO_2, the efficiency decreases. The initial thermoelectric fabricated without nanostructuring, in which the maximal thermoelectric figure of merit ZT = 1 at 390 K, is most efficient at temperatures above 350 K.

scholarly journals Термоэлектрические свойства твердых растворов (CuInSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(In-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-)-=SUB=-x-=/SUB=-

2022 ◽  
Vol 56 (1) ◽  
pp. 38
Author(s):  
Ч.И. Абилов ◽  
М.Ш. Гасанова ◽  
Н.Т. Гусейнова ◽  
Э.К. Касумова
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Charge Carriers ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Mobility Of Charge Carriers ◽  
Temperature Dependences ◽  
Thermoelectric Coefficient

The results of studying the temperature dependences of electrical conductivity, thermoelectric coefficient, Hall mobility of charge carriers, total and electronic thermal conductivity, as well as phonon thermal resistance of alloys of (CuInSe2)1-x(In2Te3)x solid solutions at x=0.005 and 0.0075 are presented. The values ​​of these parameters for certain temperatures were used to calculate the values ​​of the thermoelectric figure of merit of the indicated compositions. It turned out that as the temperature rises, the thermoelectric figure of merit tends to grow strongly, from which it can be concluded that these materials can be used in the manufacture of thermoelements.

scholarly journals Enhanced Thermoelectric Properties of WS2/Single-Walled Carbon Nanohorn Nanocomposites

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 140 ◽  
Author(s):  
Ji Hoon Kim ◽  
Seunggun Yu ◽  
Sang Won Lee ◽  
Seung-Yong Lee ◽  
Keun Soo Kim ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
High Frequency ◽  
Figure Of Merit ◽  
Thermoelectric Efficiency ◽  
Thermoelectric Figure ◽  
Carbon Nanohorns ◽  
Single Walled Carbon ◽  
High Frequency Induction

Recently, two-dimensional tungsten disulfide (WS2) has attracted attention as a next generation thermoelectric material due to a favorable Seebeck coefficient. However, its thermoelectric efficiency still needs to be improved due to the intrinsically low electrical conductivity of WS2. In the present study, thermoelectric properties of WS2 hybridized with highly conductive single-walled carbon nanohorns (SWCNHs) were investigated. The WS2/SWCNH nanocomposites were fabricated by annealing the mixture of WS2 and SWCNHs using a high-frequency induction heated sintering (HFIHS) system. By adding SWCNHs to WS2, the nanocomposites exhibited increased electrical conductivity and a slightly decreased Seebeck coefficient with the content of SWCNHs. Hence, the maximum power factor of 128.41 μW/mK2 was achieved for WS2/SWCNHs with 0.1 wt.% SWCNHs at 780 K, resulting in a significantly improved thermoelectric figure of merit (zT) value of 0.027 compared to that of pristine WS2 with zT 0.017.

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