An efficient organic solvent-free solution-processing strategy for high-mobility metal chalcogenide film growth

2017 ◽  
Vol 19 (4) ◽  
pp. 946-951 ◽  
Author(s):  
Jie Zhao ◽  
Il Jeon ◽  
Qinghua Yi ◽  
Menka Jain ◽  
Mark H. Rummeli ◽  
...  
Keyword(s):  
Film Growth ◽  
High Mobility ◽  
Free Solution ◽  
Processing Strategy ◽  
Chemical Solution ◽  
High Quality ◽  
Metal Chalcogenide ◽  
Solution Approach ◽  
Chalcogenide Film ◽  
Quality Metal

One of the primary challenges for high-quality metal chalcogenide film growth by a chemical solution approach is to avoid the use of volatile/hazardous organic solvents during the fabrication processes.

High-Mobility Ga-Polarity GaN achieved by NH3-MBE

2002 ◽  
Vol 743 ◽  
Author(s):  
J. X. Wang ◽  
X. L. Wang ◽  
D. Z. Sun ◽  
J. M. Li ◽  
Y. P. Zeng ◽  
...  
Keyword(s):  
Room Temperature ◽  
High Mobility ◽  
Radio Frequency Plasma ◽  
Chemical Solution ◽  
High Quality ◽  
Sapphire Substrates ◽  
Best Value ◽  
Frequency Plasma ◽  
Surface Examination

ABSTRACTGaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm2/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.

Synthesis and evaluation of new copper ketoiminate precursors for a facile and additive-free solution-based approach to nanoscale copper oxide thin films

2017 ◽  
Vol 46 (8) ◽  
pp. 2670-2679 ◽  
Author(s):  
Sarah Karle ◽  
Detlef Rogalla ◽  
Arne Ludwig ◽  
Hans-Werner Becker ◽  
Andreas Dirk Wieck ◽  
...  
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Chemical Solution Deposition ◽  
Free Solution ◽  
Chemical Solution ◽  
Oxide Thin Films ◽  
High Quality ◽  
Solution Deposition ◽  
P Type

A streamlined approach towards high-quality p-type CuOx nanostructures was successfully established based on rational precursor design for chemical solution deposition.

A general and facile solution approach for deposition of high-quality metal oxide charge transport layers

2022 ◽  
Vol 236 ◽  
pp. 111511
Author(s):  
Yuxiang Wang ◽  
Yue Liu ◽  
Junye Tong ◽  
Xinan Shi ◽  
Lijian Huang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Charge Transport ◽  
High Quality ◽  
Oxide Charge ◽  
Solution Approach ◽  
Quality Metal

THEORETICAL GROUNDS FOR FORMATION OF HIGH QUALITY METAL-CERAMIC COATINGS BY CARBOVIBRATING ELECTRODE ARC STRENGTHENING

2020 ◽  
pp. 2-11
Author(s):  
N. V. TITOV ◽  
◽  
A. V. KOLOMEYCHENKO ◽  
V. L. BASINYUK ◽  
I. N. KRAVCHENKO ◽  
...  
Keyword(s):  
Ceramic Coatings ◽  
High Quality ◽  
Metal Ceramic ◽  
Quality Metal

The effect of complexing agents in chemical solution deposition of metal chalcogenide thin films

2021 ◽  
Author(s):  
Sucheta Sengupta ◽  
Rinki Aggarwal ◽  
Yuval Golan
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Metal Ion ◽  
Chemical Deposition ◽  
Review Article ◽  
Complexing Agents ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Metal Chalcogenide ◽  
Chalcogenide Thin Films

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.

A chemical solution approach for superconducting and hard epitaxial NbC film

2010 ◽  
Vol 46 (41) ◽  
pp. 7837 ◽  
Author(s):  
Guifu Zou ◽  
Hongmei Luo ◽  
Yingying Zhang ◽  
Jie Xiong ◽  
Qiangmin Wei ◽  
...  
Keyword(s):  
Chemical Solution ◽  
Solution Approach

Concentration of atomic oxygen in low earth orbit and in the laboratory for use in high quality oxide thin film growth

1998 ◽  
Author(s):  
J. A. Schultz ◽  
K. Eipers-Smith ◽  
K. Waters ◽  
S. Schultz ◽  
M. Sterling ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Oxygen ◽  
Film Growth ◽  
Low Earth Orbit ◽  
Thin Film Growth ◽  
Oxide Thin Film ◽  
Earth Orbit ◽  
High Quality

High-Quality Epitaxial Film Growth of Superconducting Sodium-Cobalt Oxyhydrate, Na0.3 CoO2 · 1.3H2 O

2011 ◽  
pp. 303-309
Author(s):  
Kenji Sugiura ◽  
Hiromichi Ohta ◽  
Kenji Nomura ◽  
Hiroshi Yanagi ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Epitaxial Film ◽  
Film Growth ◽  
High Quality ◽  
Epitaxial Film Growth

Evaluation of Steam Washers in Power-Plant Boilers

1961 ◽  
Vol 83 (4) ◽  
pp. 343-350
Author(s):  
H. A. Klein
Keyword(s):  
High Pressure ◽  
Power Plant ◽  
Water Contamination ◽  
External Control ◽  
Free Solution ◽  
Raw Water ◽  
High Quality ◽  
Silica Deposition ◽  
Power Stations ◽  
Carry Over

A research program was undertaken to study the feasibility of employing steam washers to control silica deposition in high-pressure turbines. Under certain laboratory conditions, steam washing was found to be effective; however, its useful application appears to be limited to a very small number of power stations. Space limitations in modern boiler drums make it difficult to install the bulky equipment without interfering with flow and distribution through the drum. A washer installation can actually be the cause of mechanical carry-over. The use of high-quality make-up water and the prevention of raw-water contamination provide a more economical and trouble-free solution to the silica problem. A steam washer has little practical value in plants where good external control of silica is practiced.

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