scholarly journals Charge-tunnelling and self-trapping: common origins for blinking, grey-state emission and photoluminescence enhancement in semiconductor quantum dots

Nanoscale ◽  
2016 ◽  
Vol 8 (17) ◽  
pp. 9272-9283 ◽  
Author(s):  
M. A. Osborne ◽  
A. A. E. Fisher
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Carrier Dynamics ◽  
Semiconductor Quantum Dots ◽  
Self Trapping ◽  
Photoluminescence Enhancement ◽  
A Charge

Modelling quantum dot blinking, grey-states and photoluminescence enhancement within a charge-tunnelling and self-trapping description of exciton-carrier dynamics.

Few-Particle Effects in Nonlinear Optical Spectra of Semiconductor Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
Ulrich Hohenesteri ◽  
Fausto Rossi ◽  
Elisa Molinari
Keyword(s):  
Quantum Dots ◽  
Density Matrix ◽  
Nonlinear Optical ◽  
Coherent Control ◽  
Optical Spectra ◽  
Carrier Dynamics ◽  
Semiconductor Quantum Dots ◽  
Nonequilibrium Carrier ◽  
Optical Nonlinearities ◽  
Matrix Approach

ABSTRACTWe present a density-matrix approach for the description of nonequilibrium carrier dynamics in optically excited semiconductor quantum dots, that explicitly accounts for exciton-exciton as well as exciton-carrier interactions. Within this framework, we analyze few-particle effects in the optical spectra and provide a consistent description of additional peaks appearing at high photoexcitation density. We discuss possible applications of such optical nonlinearities in future coherent-control experiments.

Quantum dot–polymer conjugates for stable luminescent displays

Nanoscale ◽  
2018 ◽  
Vol 10 (28) ◽  
pp. 13368-13374 ◽  
Author(s):  
Sushant Ghimire ◽  
Anjaly Sivadas ◽  
Ken-ichi Yuyama ◽  
Yuta Takano ◽  
Raju Francis ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Semiconductor Quantum Dots ◽  
Broad Absorption ◽  
Polymer Conjugates ◽  
Absorption Of Light

The broad absorption of light in the UV-Vis-NIR region and the size-based tunable photoluminescence color of semiconductor quantum dots make these tiny crystals one of the most attractive antennae in solar cells and phosphors in electrooptical devices.

Upconverting nanoparticle to quantum dot FRET for homogeneous double-nano biosensors

RSC Advances ◽  
2015 ◽  
Vol 5 (18) ◽  
pp. 13270-13277 ◽  
Author(s):  
Leena Mattsson ◽  
K. David Wegner ◽  
Niko Hildebrandt ◽  
Tero Soukka
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Near Infrared ◽  
Photophysical Properties ◽  
Semiconductor Quantum Dots ◽  
Optical Biosensing ◽  
Donor Acceptor

The unique photophysical properties of upconverting nanoparticles (UCNPs) and semiconductor quantum dots (QDs) render them an attractive donor–acceptor combination for near-infrared (NIR) excited FRET-based optical biosensing.

scholarly journals Models of semiconductor quantum dots blinking based on spectral diffusion -=SUP=-*-=/SUP=-

2019 ◽  
Vol 126 (1) ◽  
pp. 77
Author(s):  
V.K. Busov ◽  
P.A. Frantsuzov
Keyword(s):  
Quantum Dots ◽  
Electron Transfer ◽  
Quantum Dot ◽  
Semiconductor Quantum Dots ◽  
Spectral Diffusion ◽  
The Other ◽  
Diffusion Controlled ◽  
Colloidal Quantum Dot ◽  
Marcus Model ◽  
Observed Behavior

AbstractThree models of single colloidal quantum dot emission fluctuations (blinking) based on spectral diffusion were considered analytically and numerically. It was shown that the only one of them, namely the Frantsuzov and Marcus model reproduces the key properties of the phenomenon. The other two models, the Diffusion-Controlled Electron Transfer (DCET) model and the Extended DCET model predict that after an initial blinking period, most of the QDs should become permanently bright or permanently dark which is significantly different from the experimentally observed behavior.

Inorganic Quantum Dot - Organic Dendrimer Nanocomposite Materials

1999 ◽  
Vol 576 ◽  
Author(s):  
K. Sooklal ◽  
J. Huang ◽  
C. J. Murphy ◽  
L. Hanus ◽  
H. J. Ploehn
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Quantum Dot ◽  
Sol Gel ◽  
Nanocomposite Materials ◽  
Silica Sol ◽  
Semiconductor Quantum Dots ◽  
Current Interest ◽  
Cds Quantum Dots ◽  
Bright Blue

ABSTRACTSemiconductor quantum dots are of great current interest for their optical properties. We have developed a method for preparing CdS quantum dots in commercially available PAMAM Starburst dendrimers. The resulting CdS-dendrimer nanocomposites are exceptionally stable and emit brightly in the blue. The size of the dendrimer (its “generation”) has a surprisingly small effect on the optical properties of the resulting nanocomposites. The dot-dendrimer nanocomposites can be captured in a silica sol-gel matrix to yield a stable, bright blue-emitting glass.

Temperature Dependence of Photoluminescence for Spin-Coated Semiconductor Quantum Dots and Quantum Dot-Dye Nanoassemblies on Quartz Substrate

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940005
Author(s):  
E. Zenkevich ◽  
A. Stupak ◽  
C. von Borczyskowski
Keyword(s):  
Phase Transition ◽  
Quantum Dots ◽  
Quantum Dot ◽  
Temperature Dependence ◽  
Quartz Substrate ◽  
Semiconductor Quantum Dots ◽  
Porphyrin Molecule ◽  
Specific Change ◽  
Capping Layer ◽  
Glass Forming

The attachment of pyridyl substituted porphyrin molecule to the surface of CdSe/ZnS quantum dots in solutions is realized in the competition with capping ligand TOPO molecules resulting in the specific change of photoluminescence for the quantum dots across the temperature range of 77–290[Formula: see text]K. We have shown that fixation of alone quantum dots or quantum dot-porphyrin nanoassemblies on quartz substrate changes significantly temperature dependence of photoluminescence. In contrast to the samples in a glass-forming solution no phase transition of the TOPO capping layer was observed upon removal of the capping layer.

Plasmon–exciton interaction strongly increases the efficiency of a quantum dot–based near-infrared photodetector operating in the two-photon absorption mode under normal conditions.

Nanoscale ◽  
2021 ◽  
Author(s):  
Victor A. Krivenkov ◽  
Pavel Samokhvalov ◽  
Ivan Vasil’evskii ◽  
Nikolai Kargin ◽  
Igor Nabiev
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Near Infrared ◽  
Semiconductor Quantum Dots ◽  
Photon Absorption ◽  
Bandgap Energy ◽  
Infrared Photodetector ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Absorption Mode

Semiconductor quantum dots (QDs) are known for their high two-photon absorption (TPA) capacity. This allows them to efficiently absorb infrared photons with energies lower than the bandgap energy. Moreover, TPA...

Laser-controlled projection of quantum dot dipoles using metal-oxide plasmonic metastructures: keeping spin polarization memory

2021 ◽  
Author(s):  
S. M. Sadeghi ◽  
Waylin Wing ◽  
Rithvik R Gutha ◽  
Christina Sharp ◽  
Dustin Roberts ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Metal Oxide ◽  
Spin Polarization ◽  
Spontaneous Emission ◽  
Complete Loss ◽  
Semiconductor Quantum Dots

It is known that the spontaneous emission of semiconductor quantum dots are mostly unpolarized when they are excited off-resonantly. The complete loss of polarization memory is associated with the ultrafast...

Carrier dynamics in spatially ordered InAs quantum dots

2002 ◽  
Vol 719 ◽  
Author(s):  
Jörg Siegert ◽  
Saulius Marcinkevièius ◽  
Andreas Gaarder ◽  
Rosa Leon ◽  
Sergio Chaparro ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
Misfit Dislocations ◽  
Nonradiative Recombination ◽  
Photoluminescence Intensity ◽  
Inas Quantum Dots ◽  
Dislocation Arrays ◽  
Spatial Ordering

AbstractSpatial ordering of InAs quantum dots was attained by using misfit dislocations generated in a metastable InGaAs layer by means of thermal annealing. Influence of quantum dot positional ordering and dot proximity to dislocation arrays on carrier dynamics was studied by timeresolved photoluminescence. Substantially narrower inhomogeneous broadening from the ordered quantum dots was observed. Excitation intensity dependence of the photoluminescence intensity and carrier lifetime indicates stronger influence of nonradiative recombination for the ordered quantum dot structures. Numerical simulations allow estimating electron and hole capture rates from the quantum dots to traps located either at the quantum dot interfaces or in the vicinity of the quantum dots.

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