Atomic layer deposition of nickel–cobalt spinel thin films

Thin solid films consisting of ZrO2 and Fe2O3 were grown by atomic layer deposition (ALD) at 400 °C. Metastable phases of ZrO2 were stabilized by Fe2O3 doping. The number of alternating ZrO2 and Fe2O3 deposition cycles were varied in order to achieve films with different cation ratios. The influence of annealing on the composition and structure of the thin films was investigated. Additionally, the influence of composition and structure on electrical and magnetic properties was studied. Several samples exhibited a measurable saturation magnetization and most of the samples exhibited a charge polarization. Both phenomena were observed in the sample with a Zr/Fe atomic ratio of 2.0.

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Structural, morphological and magnetic properties of iron oxide thin films obtained by atomic layer deposition as a function of their thickness

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2021.167914 ◽

2021 ◽

pp. 167914

Author(s):

Paulina Márquez ◽

Daniela Alburquenque ◽

Freddy Celis ◽

Rafael Freire ◽

Juan Escrig

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Iron Oxide ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Oxide Thin Films ◽

Layer Deposition

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Low-temperature grown wurtzite InxGa1−xN thin films via hollow cathode plasma-assisted atomic layer deposition

Journal of Materials Chemistry C ◽

10.1039/c5tc01735a ◽

2015 ◽

Vol 3 (37) ◽

pp. 9620-9630 ◽

Cited By ~ 15

Author(s):

Ali Haider ◽

Seda Kizir ◽

Cagla Ozgit-Akgun ◽

Eda Goldenberg ◽

Shahid Ali Leghari ◽

...

Keyword(s):

Thin Films ◽

Low Temperature ◽

Atomic Layer Deposition ◽

Band Gap ◽

Hollow Cathode ◽

Optical Band Gap ◽

Atomic Layer ◽

Cathode Plasma ◽

Layer Deposition ◽

Wide Range

Hollow cathode plasma assisted atomic layer deposited InxGa1−xN alloys show successful tunability of the optical band gap by changing the In concentration in a wide range.

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Magnetic properties of iron doped zirconia as a function of Fe concentration: From ab initio simulations to the growth of thin films by atomic layer deposition and their characterization by synchrotron radiation

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.5016028 ◽

2018 ◽

Vol 36 (2) ◽

pp. 02D404 ◽

Cited By ~ 1

Author(s):

Alessio Lamperti ◽

Elena Cianci ◽

Roberta Ciprian ◽

Luca Capasso ◽

Eugen Weschke ◽

...

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Synchrotron Radiation ◽

Atomic Layer Deposition ◽

Ab Initio ◽

Atomic Layer ◽

Ab Initio Simulations ◽

Layer Deposition ◽

Iron Doped

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Magnetic Properties of Polycrystalline Bismuth Ferrite Thin Films Grown by Atomic Layer Deposition

The Journal of Physical Chemistry Letters ◽

10.1021/jz502285f ◽

2014 ◽

Vol 5 (24) ◽

pp. 4319-4323 ◽

Cited By ~ 19

Author(s):

Pasi Jalkanen ◽

Vladimir Tuboltsev ◽

Benoît Marchand ◽

Alexander Savin ◽

Manjunath Puttaswamy ◽

...

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Atomic Layer Deposition ◽

Bismuth Ferrite ◽

Atomic Layer ◽

Layer Deposition ◽

Ferrite Thin Films

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Effects related to deposition temperature of ZnCoO films grown by atomic layer deposition - uniformity of Co distribution, structural, optical, electrical and magnetic properties

physica status solidi (b) ◽

10.1002/pssb.200983689 ◽

2010 ◽

Vol 247 (7) ◽

pp. 1666-1670 ◽

Cited By ~ 11

Author(s):

Małgorzata I. Łukasiewicz ◽

Bartłomiej Witkowski ◽

Marek Godlewski ◽

Elżbieta Guziewicz ◽

Maciej Sawicki ◽

...

Keyword(s):

Magnetic Properties ◽

Atomic Layer Deposition ◽

Deposition Temperature ◽

Atomic Layer ◽

Electrical And Magnetic Properties ◽

Layer Deposition ◽

Deposition Uniformity

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Fabrication of Multilayer ZnO/TiO2/ZnO Thin Films with Enhancement of Optical Properties by Atomic Layer Deposition (ALD)

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.465-466.916 ◽

2013 ◽

Vol 465-466 ◽

pp. 916-921 ◽

Cited By ~ 4

Author(s):

Rosniza Hussin ◽

Kwang Leong Choy ◽

Xiang Hui Hou

Keyword(s):

Thin Films ◽

Optical Properties ◽

Atomic Layer Deposition ◽

Single Layer ◽

Atomic Layer ◽

Degree Of Crystallinity ◽

Multilayer Thin Films ◽

Layer Deposition ◽

Vis Spectroscopy ◽

Wide Range

Atomic layer deposition (ALD) is a precision growth technique that is able to deposit either amorphous or epitaxial layer on a wide range of substrates. Multilayer thin films have been widely studied because their properties are different from those of bulk materials constituents owing to the two-dimensional films and high density of interfaces. Multilayer nanostructured thin films were fabricated on silicon and glass substrates by ALD. The optical and electrical of multilayer ZnO/TiO2/ZnO films were investigated. The microstructure compositions and surface morphology of these multilayer films were analyzed by X-ray diffraction (XRD), Atomic force microscope (AFM) and Scanning electron microscope (SEM). The optical properties were characterized using photoluminescence (PL) and UV-VIS spectroscopy. XRD patterns confirmed that ZnO with wutrtize crystal structure and TiO2 with anatase structure were presented. The degree of crystallinity of multilayer thin films has been improved through the deposition of ZnO. The intensity of UV luminescence of the multilayer has increased as compared to the single layer TiO2 and bilayer ZnO/TiO2. The multilayer ZnO/TiO2/ZnO has high transmittance (above 80%) in visible region. All the result suggested that the use of multilayer thin films effectively enhanced the quality of films crystallinity and optical properties as compared to single layer ZnO and bilayer ZnO/TiO2.

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