Ultraviolet-enhanced electroluminescence from individual ZnO microwire/p-Si light-emitting diode by reverse tunneling effect

2017 ◽  
Vol 5 (26) ◽  
pp. 6640-6646 ◽  
Author(s):  
Yingtian Xu ◽  
Ying Li ◽  
He Zhang ◽  
Liang Jin ◽  
Xuan Fang ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Light Emitting Diode ◽  
Emission Peak ◽  
Tunneling Effect ◽  
Light Emitting ◽  
Uv Emission

A sharp UV emission peak at ∼400 nm dominates the electroluminescence under reverse bias owing to the tunneling effect.

UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

2002 ◽  
Vol 722 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitation Power Density ◽  
Light Emitting ◽  
Uv Emission ◽  
Alloy Disorder

AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.

Recombination dynamics of carriers in an InGaN/AlGaN single-quantum-well light-emitting diode under reverse-bias voltages

2000 ◽  
Vol 76 (12) ◽  
pp. 1546-1548 ◽  
Author(s):  
Hiromitsu Kudo ◽  
Hiroki Ishibashi ◽  
Ruisheng Zheng ◽  
Yoichi Yamada ◽  
Tsunemasa Taguchi
Keyword(s):  
Quantum Well ◽  
Reverse Bias ◽  
Light Emitting Diode ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Recombination Dynamics

Increase of current density and luminance in organic light-emitting diode with reverse bias driving

2017 ◽  
Vol 48 ◽  
pp. 330-335 ◽  
Author(s):  
Jiun-Haw Lee ◽  
Bo-Yen Lin ◽  
Yen-Chen Shih ◽  
King-Fu Lin ◽  
Leeyih Wang ◽  
...  
Keyword(s):  
Current Density ◽  
Reverse Bias ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light

Blue/green electroluminescence from a ZnO nanorods/p-GaN heterojunction light emitting diode under different reverse bias

2014 ◽  
Vol 293 ◽  
pp. 225-228 ◽  
Author(s):  
Qiu-Ming Fu ◽  
Wei Cao ◽  
Guo-Wei Li ◽  
Zhi-Dong Lin ◽  
Zhe Chen ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Light Emitting Diode ◽  
Zno Nanorods ◽  
Light Emitting

Optical characterizations and reverse-bias electroluminescence observation for reliability investigations of the InGaN light emitting diode

2013 ◽  
Vol 101 ◽  
pp. 42-46 ◽  
Author(s):  
Hsiang Chen ◽  
Yih-Min Yeh ◽  
Chuan Hao Liao ◽  
Chun Wei Lin ◽  
Chuan-Haur Kao ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Light Emitting Diode ◽  
Light Emitting

Unusual electroluminescence from n-ZnO@i-MgO core–shell nanowire color-tunable light-emitting diode at reverse bias

2014 ◽  
Vol 16 (20) ◽  
pp. 9302-9308 ◽  
Author(s):  
Xiaoming Mo ◽  
Guojia Fang ◽  
Hao Long ◽  
Songzhan Li ◽  
Haoning Wang ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Core Shell ◽  
Light Emitting ◽  
Color Tunable

Light-emitting diodes based on n-ZnO@i-MgO core–shell nanowire/p-NiO heterojunction only demonstrated reverse-bias electroluminescence.

Elucidating the Physical Property of the InGaN Nanorod Light-Emitting Diode: Large Tunneling Effect

2011 ◽  
Vol 17 (4) ◽  
pp. 985-989 ◽  
Author(s):  
Ya-Ju Lee ◽  
Chia-Jung Lee ◽  
Chih-Hao Chen ◽  
Tien-Chang Lu ◽  
Hao-Chung Kuo
Keyword(s):  
Light Emitting Diode ◽  
Physical Property ◽  
Tunneling Effect ◽  
Light Emitting

scholarly journals Dual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Tae Yeon Kim ◽  
Sungho Park ◽  
Byung Jun Kim ◽  
Su Been Heo ◽  
Jong Hun Yu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Vanadium Oxide ◽  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Dual Functional ◽  
Solution Processable

AbstractDual-functional quantum-dots light emitting diodes (QLEDs) have been fabricated using solution processable vanadium oxide (V2O5) hole injection layer to control the carrier transport behavior. The device shows selectable functionalities of photo-detecting and light-emitting behaviors according to the different operating voltage conditions. The device emitted a bright green light at the wavelength of 536 nm, and with the maximum luminance of 31,668 cd/m2 in a forward bias of 8.6 V. Meanwhile, the device could operate as a photodetector in a reverse bias condition. The device was perfectly turned off in a reverse bias, while an increase of photocurrent was observed during the illumination of 520 nm wavelength light on the device. The interfacial electronic structure of the device prepared with different concentration V2O5 solution was measured in detail using x-ray and ultraviolet photoelectron spectroscopy. Both the highest occupied molecular orbital and the gap state levels were moved closer to the Fermi level, according to increase the concentration of V2O5 solution. The change of gap state position enables to fabricate a dual-functional QLEDs. Therefore, the device could operate both as a photodetector and as a light-emitting diode with different applied bias. The result suggests that QLEDs can be used as a photosensor and as a light-emitting diode for the future display industry.

scholarly journals Effect of a Rubidium Chloride Carrier Confinement Layer on the Characteristics of CsPbBr3 Perovskite Light-Emitting Diodes

2022 ◽  
Vol 17 (1) ◽  
Author(s):  
Chi-Ta Li ◽  
Kuan-Lin Lee ◽  
Sea-Fue Wang ◽  
Lung-Chien Chen
Keyword(s):  
Lattice Mismatch ◽  
Light Emitting Diode ◽  
Bottom Layer ◽  
Emission Peak ◽  
Rubidium Chloride ◽  
Light Emitting ◽  
Carrier Confinement ◽  
Crystallite Sizes ◽  
Pl Emission ◽  
And Performance

AbstractThis work describes the effect of a rubidium chloride (RbCl) interlayer in CsPbBr3 perovskite light-emitting diode (LED) structures. RbCl crystallites exhibited polyhedral structures and lattice parameters similar to those of CsPbBr3 perovskite crystallites. The lattice mismatch between the RbCl interlayer and CsPbBr3 active layer was only approximately 2%. The devices exhibited the best quality and performance when RbCl was used as the nucleation and carrier confinement layer. The crystallite sizes of CsPbBr3 with 0.2-, 0.5-, and 1-nm-thick RbCl bottom layers were 55.1, 65.4, and 55.1 nm, respectively. The full width at half maximum (FWHM) of the photoluminescence (PL) emission peak for CsPbBr3 with the RbCl bottom layer was 0.096 eV.

Sign in / Sign up

Export Citation Format

Share Document