Electric–elastic properties of a novel high-quality CdTeMoO6 piezoelectric crystal

CrystEngComm ◽  
2018 ◽  
Vol 20 (37) ◽  
pp. 5602-5608 ◽  
Author(s):  
Conggang Li ◽  
Zeliang Gao ◽  
Xiangxin Tian ◽  
Qian Wu ◽  
Weiqun Lu ◽  
...  

Bulk single crystals of CdTeMoO6 and its optimized growth parameters and the complete sets of dielectric, piezoelectric and elastic coefficients have been investigated.

2005 ◽  
Vol 892 ◽  
Author(s):  
Ziad Georges Herro ◽  
Dejin Zhuang ◽  
Raoul Schlesser ◽  
Ramon Collazo ◽  
Zlatko Sitar

AbstractWe have demonstrated growth of large AlN single crystals using (0001)-oriented AlN seeds. Boules with a diameter of 15 mm and length up to 12 mm were obtained from 5 mm seeds. Step flow growth was observed on both Al and N-polar surfaces. N-polar face was suitable for growth within a large window of growth parameters while the Al-polar seeds yielded high-quality crystals only at low supersaturation.


1992 ◽  
pp. 477-480
Author(s):  
Satoru Kishida ◽  
Heizo Tokutaka ◽  
Makoto Katayama ◽  
Makoto Chihaya ◽  
Katsumi Nishimori ◽  
...  

2018 ◽  
Vol 28 (3) ◽  
pp. 237 ◽  
Author(s):  
Thuat Nguyen-Tran ◽  
Mai Ngoc An ◽  
Trang Thu Luong ◽  
Hung Huy Nguyen ◽  
Tu Thanh Truong

We report the growth and characterization of different bulk single crystals of organo lead mixed halide perovskites CH3NH3PbI3−xBrx by two different crystal growth approaches: (i)anti-solvent diffusion, and (ii) inverse temperature crystallization. In order to control the size and the shape of crystals, we have investigated different experimental growth parameters such as temperature and precursor concentration. The morphology of obtained crystals was observed by optical microscope, whereas their intrinsic crystalline properties were characterized by single crystal as well as powder X-ray diffraction. The results illustrated that the growth and crystalline structure of mixed halide perovskites CH3NH3PbI3−xBrx could be easily tuned.


1995 ◽  
Vol 05 (C8) ◽  
pp. C8-729-C8-734
Author(s):  
A.I. Lotkov ◽  
V.P. Lapshin ◽  
V.A. Goncharova ◽  
H.V Chernysheva ◽  
V.N. Grishkov ◽  
...  

1987 ◽  
Vol 48 (C1) ◽  
pp. C1-595-C1-598 ◽  
Author(s):  
M. OHTOMO ◽  
S. AHMAD ◽  
R. W. WHITWORTH
Keyword(s):  

2010 ◽  
Vol 1247 ◽  
Author(s):  
Rocío Calderón-Villajos ◽  
Carlos Zaldo ◽  
Concepción Cascales

AbstractControlled reaction conditions in simple, template-free hydrothermal processes yield Tm-Lu2O3 and Tm-GdVO4 nanocrystals with well-defined specific morphologies and sizes. In both oxide families, nanocrystals prepared at pH 7 reaction media exhibit photoluminescence in ∼1.95 μm similar to bulk single crystals. For the lowest Tm3+ concentration (0.2 % mol) in GdVO4 measured 3H4 and 3F4 fluorescence lifetimes τ are very near to τrad.


Author(s):  
М. Раранський ◽  
В. Балазюк ◽  
М. Мельник ◽  
О. Горда ◽  
М. Гунько

2019 ◽  
Vol 58 (5) ◽  
pp. 050918 ◽  
Author(s):  
Takeaki Hamachi ◽  
Tetsuya Tohei ◽  
Masayuki Imanishi ◽  
Yusuke Mori ◽  
Akira Sakai

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 235
Author(s):  
Shuqi Zhao ◽  
Tongtong Yu ◽  
Ziming Wang ◽  
Shilei Wang ◽  
Limei Wei ◽  
...  

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.


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