Organosilicon dimer of BTBT as a perspective semiconductor material for toxic gas detection with monolayer organic field-effect transistors

2018 ◽  
Vol 6 (36) ◽  
pp. 9649-9659 ◽  
Author(s):  
Askold A. Trul ◽  
Alexey S. Sizov ◽  
Victoria P. Chekusova ◽  
Oleg V. Borshchev ◽  
Elena V. Agina ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Fast Response ◽  
Semiconductor Material ◽  
Gas Detection ◽  
Electrical Performance ◽  
Organic Field Effect Transistors ◽  
Toxic Gas

Monolayer organic field effect transistors (OFETs) based on novel BTBT dimer demonstrate excellent electrical performance and fast response to ammonia vapours.

Flexible organic field-effect transistors fabricated by the electrode-peeling transfer

2003 ◽  
Vol 769 ◽  
Author(s):  
Takeshi Yasuda ◽  
Katsuhiko Fujita ◽  
Tetsuo Tsutsui
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Flexible Substrate ◽  
Chemical Vapor ◽  
Solid Substrate ◽  
Semiconductor Material ◽  
Organic Field Effect Transistors ◽  
Gate Electrode ◽  
Micro Patterning

AbstractWe report a simple and mild fabrication of flexible organic field-effect transistors (OFETs) by an electrode-peeling transfer method. Firstly, fine patterns of source-drain metal electrodes were formed on a solid substrate, where a micro-patterning process such as photolithography is applicable. An organic dielectric layer (poly-chloro-p-xylylene) was deposited by a chemical vapor deposition. Then patterned gate electrode was deposited using a shadow mask. On the top surface of the gate electrode, another adhesive flexible substrate was fixed and the stack of the flexible substrate/gate electrode /dielectric layer /source-drain electrode was peeled away from the solid substrate. The peeling-transfer was completed with a help of a self-assembled monolayer of n-decyl mercaptan as a connecting buffer layer between the gold electrodes and the dielectric layer. Then an organic semiconductor material was deposited on the fresh peeled-off surface on the flexible substrate. When pentacene was used as the semiconductor material, the OFETs exhibited a hole mobility of 0.1 cm2/Vs and a current on/off ratio of 105.

New n-type semiconductor material based on styryl fullerene for organic field-effect transistors

2021 ◽  
Vol 31 (5) ◽  
pp. 641-643
Author(s):  
Airat R. Tuktarov ◽  
Nuri M. Chobanov ◽  
Zarema R. Sadretdinova ◽  
Renat B. Salikhov ◽  
Ilnur N. Mullagaliev ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Material ◽  
Organic Field Effect Transistors ◽  
Type Semiconductor

scholarly journals H2S and NH3 Detection with Langmuir-Schaefer Monolayer Organic Field-Effect Transistors

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 935
Author(s):  
Alexey Sizov ◽  
Askold Trul ◽  
Victoria Chekusova ◽  
Oleg Borshchev ◽  
Alexey Vasiliev ◽  
...  
Keyword(s):  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Electrical Performance ◽  
Organic Field Effect Transistors ◽  
Ambient Conditions ◽  
Long Term Stability ◽  
Sensing Technology ◽  
Low Concentrations

In this work gas sensing properties of Langmuir-Schaefer monolayer organic field-effect transistors (LS OFETs) prepared from organosilicon derivative of [1]benzothieno[3,2-b][1]-benzothiophene (BTBT) have been investigated. The monolayer has been deposited using Langmuir-Schaefer method, which results in a uniform low-defect monolayer with excellent electrical performance, hole mobility up to 7 × 10−2 cm2 V−1 s−1, the threshold voltage around 0 V and on-off ratio of 104. Developed sensors demonstrate a long-term stability of a half-year storage under ambient conditions. Preliminary investigations demonstrated that the LS OFETs give instantaneous response on ammonia and hydrogen sulfide at low concentrations. The results reported open new perspectives for the OFET-based gas-sensing technology.

Study of electrical performance and stability of solution-processed n-channel organic field-effect transistors

2009 ◽  
Vol 106 (5) ◽  
pp. 054504 ◽  
Author(s):  
Shree Prakash Tiwari ◽  
Xiao-Hong Zhang ◽  
William J. Potscavage ◽  
Bernard Kippelen
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Performance ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
Stability Of Solution
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