Flexible organic field-effect transistors fabricated by the electrode-peeling transfer

We report a simple and mild fabrication of flexible organic field-effect transistors (OFETs) by an electrode-peeling transfer method. Firstly, fine patterns of source-drain metal electrodes were formed on a solid substrate, where a micro-patterning process such as photolithography is applicable. An organic dielectric layer (poly-chloro-p-xylylene) was deposited by a chemical vapor deposition. Then patterned gate electrode was deposited using a shadow mask. On the top surface of the gate electrode, another adhesive flexible substrate was fixed and the stack of the flexible substrate/gate electrode /dielectric layer /source-drain electrode was peeled away from the solid substrate. The peeling-transfer was completed with a help of a self-assembled monolayer of n-decyl mercaptan as a connecting buffer layer between the gold electrodes and the dielectric layer. Then an organic semiconductor material was deposited on the fresh peeled-off surface on the flexible substrate. When pentacene was used as the semiconductor material, the OFETs exhibited a hole mobility of 0.1 cm2/Vs and a current on/off ratio of 105.