Growth of high-quality ITO thin films at low temperature by tuning the oxygen flow rate using the nano-cluster deposition (NCD) technique

2010 ◽  
Vol 490 (4-6) ◽  
pp. 234-237 ◽  
Author(s):  
S.V.N. Pammi ◽  
Anupama Chanda ◽  
Nak-Jin Seong ◽  
Soon-Gil Yoon
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
High Quality ◽  
Cluster Deposition ◽  
Ito Thin Films ◽  
Nano Cluster

scholarly journals Effect of Oxygen Flow Rate on Properties of Aluminum-Doped Indium-Saving Indium Tin Oxide (ITO) Thin Films Sputtered on Preheated Glass Substrates

Metals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1604
Author(s):  
Svitlana Petrovska ◽  
Ruslan Sergiienko ◽  
Bogdan Ilkiv ◽  
Takashi Nakamura ◽  
Makoto Ohtsuka
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Visible Range ◽  
Oxide Content ◽  
Glass Substrates ◽  
Ito Thin Films

Amorphous aluminum-doped indium tin oxide (ITO) thin films with a reduced indium oxide content of 50 mass% were manufactured by co-sputtering of ITO and Al2O3 targets in a mixed argon–oxygen atmosphere onto glass substrates preheated at 523 K. The oxygen gas flow rate and heat treatment temperature effects on the electrical, optical and structural properties of the films were studied. Thin films were characterized by means of a four-point probe, ultraviolet–visible-infrared (UV–Vis-IR) spectroscopy and X-ray diffraction. Transmittance of films and crystallization temperature increased as a result of doping of the ITO thin films by aluminum. The increase in oxygen flow rate led to an increase in transmittance and hindering of the crystallization of the aluminum-doped indium saving ITO thin films. It has been found that the film sputtered under optimal conditions showed a volume resistivity of 713 µΩcm, mobility of 30.8 cm2/V·s, carrier concentration of 2.9 × 1020 cm−3 and transmittance of over 90% in the visible range.

Effect of oxygen flow rate on ITO thin films deposited by facing targets sputtering

2010 ◽  
Vol 518 (22) ◽  
pp. 6241-6244 ◽  
Author(s):  
Youn J. Kim ◽  
Su B. Jin ◽  
Sung I. Kim ◽  
Yoon S. Choi ◽  
In S. Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Ito Thin Films ◽  
Effect Of Oxygen

scholarly journals Effect of Oxygen Flow Rate on the Optical, Electrical, and Mechanical Properties of DC Sputtering ITO Thin Films

2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
Chuen-Lin Tien ◽  
Hong-Yi Lin ◽  
Chih-Kai Chang ◽  
Chien-Jen Tang
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Surface Roughness ◽  
Flow Rate ◽  
Optical Transmittance ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Ito Thin Films ◽  
Effect Of Oxygen

This study presents the effect of oxygen flow rate on the optical, electrical, and mechanical properties of indium tin oxide (ITO) thin films prepared by the DC magnetron sputtering technique. The oxygen flow rate was varied from 10 to 50 sccm. The ITO thin films deposition under different oxygen flow rates exhibits different properties. We used an optical spectrometer to measure the optical transmittance and a four-point probe instrument to determine the resistivity. A home-made Twyman-Green interferometer was used to evaluate residual stress and a microscopic interferometer was used to measure the surface roughness of ITO thin films. The experimental results show that the average optical transmittance is larger than 85% in visible range; the electrical resistivity has a minimum 6.85×10-4 ohm-cm for the oxygen flow of 10 sccm. The residual stress is varied from −0.15 GPa to −0.34 GPa in the range of 10–50 sccm. The root-mean-square (rms) surface roughness is changed from 2.64 nm to 2.74 nm as the oxygen flow rate increases. The results show that the oxygen flow rate has significant influence on the electrical resistivity, residual stress, and surface roughness of the ITO thin film.

Effect of Different Oxygen Flow Rate on Physical Properties of ITO Thin Films Deposited by Ion-Assistant Electron Beam Evaporation

2014 ◽  
Vol 602-603 ◽  
pp. 1004-1008
Author(s):  
Yang Qiu ◽  
De Yi Meng ◽  
Yu Feng Chen ◽  
Chen Kui Zu
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Grain Size ◽  
Electron Beam ◽  
Flow Rate ◽  
Electron Beam Evaporation ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Ito Thin Films

Tin doped indium oxide (ITO) thin films were prepared on IR glass substrates at different oxygen flow rate by ion-assisted electron beam evaporation method, high purity ITO particles (In2O3: SnO2 = 9:1 Wt%) were used as source material. Properties such as microstructure, morphology and mechanical properties were investigated by X-ray diffractometer, SEM and scratch tester, respectively. Meanwhile, lattice constant a, crystal grain size and residual stress situation of films as-deposited were calculated and discussed in detail. The results indicated that all of the films as-deposited were polycrystalline and represented [111] preferential orientation. With the increasing of the oxygen flow rate, grain size and surface roughness of films as-deposited decreased, and inner stress remained in film increased. There were two types of failure mode occurred in ITO films according to different stress situation. Relative high level of residual stress improved the mechanical properties of ITO films in a certain extent.

Influence the oxygen flow rate on the film thickness, structural, optical and photoluminescence behavior of DC sputtered NiO thin films

2019 ◽  
Vol 568 ◽  
pp. 6-12 ◽  
Author(s):  
Ahmed H. Hammad ◽  
M.Sh. Abdel-wahab ◽  
Sajith Vattamkandathil ◽  
Akhalakur Rahman Ansari
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Photoluminescence Behavior

Effect of Argon/Oxygen Flow Rate Ratios on DC Magnetron Sputtered Nano Crystalline Zirconium Titanate Thin Films

JOM ◽  
2016 ◽  
Vol 68 (6) ◽  
pp. 1647-1652 ◽  
Author(s):  
D. Jhansi Rani ◽  
A. GuruSampath Kumar ◽  
T. Sofi Sarmash ◽  
K. Chandra Babu Naidu ◽  
M. Maddaiah ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Zirconium Titanate ◽  
Nano Crystalline ◽  
Rate Ratios

Highly Transparent and Low Resistivity Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition under Different Oxygen Flow Rates

2013 ◽  
Vol 662 ◽  
pp. 453-458
Author(s):  
Kyoo Ho Kim ◽  
Eun Soo Lee ◽  
Seong Heon Lee
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Flow Rate ◽  
Pulsed Laser ◽  
Oxygen Flow Rate ◽  
Laser Deposition ◽  
Oxygen Flow ◽  
Low Resistivity ◽  
Doped Zno

Polycrystalline Al-doped ZnO (AZO) thin films with a thickness of 1300 Å were grown on Corning 1737 glass by pulsed laser deposition (PLD) at a low substrate temperature. The presence of oxygen gas during deposition led to a remarkable enhancement of the (002) c-axis preferential orientation as well as increased crystallite size. Highly transparent films with a transmittance of 85% could be obtained by controlling the oxygen flow rate, while causing a Burstein-Moss shift toward a shorter wavelength as well. The resistivities of the films were found to be functions of both the oxygen flow rate and substrate temperature, with the lowest value being 2.3 x 10-4 Ωcm (18Ω/sq sheet resistance). It was found that both the oxygen flow rate and substrate temperature are crucial in order to grow superior device quality films with an appropriate degree of crystallinity, less surface roughness, high transmittance and low resistivity, which are characteristics of great technological importance.

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