Multi-quantum-well quantum dots with stable dual emission

Nanoscale ◽  
2019 ◽  
Vol 11 (17) ◽  
pp. 8475-8484 ◽  
Author(s):  
Weishuo Xing ◽  
Xinsu Zhang ◽  
Chong Geng ◽  
Yangyang Xie ◽  
Yuchen Deng ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Quantum Wells ◽  
Excitation Power ◽  
Dual Emission ◽  
Multi Quantum Well ◽  
Exciton Distribution

MQW-QDs with stable dual emission versus excitation power are achieved via balancing exciton distribution in adjacent quantum wells.

Thermoelectric Power in Quantum Confined Bismuth Under Classically Large Magnetic Field

1990 ◽  
Vol 216 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
S. N. Biswas
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Quantum Well ◽  
Film Thickness ◽  
Quantum Wells ◽  
Thermoelectric Power ◽  
Large Magnetic Field ◽  
Quantum Well Wires ◽  
Electron Dispersion ◽  
Theoretical Results

ABSTRACTIn this paper we studied the thermoelectric power under classically large magnetic field (TPM) in quantum wells (QWs), quantum well wires (QWWS) and quantum dots (QDs) of Bi by formulating the respective electron dispersion laws. The TPM increases with increasing film thickness in an oscillatory manner in all the cases. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

Evidence of Sequential Carrier Escape in III-V p-i-n Multi-Quantum Well Solar Cells

2007 ◽  
Vol 1031 ◽  
Author(s):  
Andenet Alemu ◽  
Jose A. H. Coaquira ◽  
Alex Freundlich
Keyword(s):  
Activation Energy ◽  
Solar Cells ◽  
Quantum Well ◽  
Quantum Wells ◽  
Effective Potential ◽  
Radiative Recombination ◽  
Energy Levels ◽  
Photoluminescence Intensity ◽  
Carrier Escape ◽  
Multi Quantum Well

AbstractSeveral InAsP/InP p-i-n Multi-Quantum Well (MQW) solar cells, only differing by their MQW region composition and geometry, were investigated. For each sample, the Arrhenius plot of the temperature related variation of the photoluminescence intensity was used to deduce the radiative recombination activation energy. The electron and holes confinement energy levels in the quantum wells and the associated effective potential barriers seen by each carrier were theoretically calculated. Carrier escape times were also estimated for each carrier. The fastest escaping carrier is found to display an effective potential energy barrier equal to the experimentally determined photoluminescence activation energy. This not only shows that the temperature related radiative recombination extinction process is driven by the carrier escape mechanism but also that the carriers escape process is sequential. Moreover, a discrepancy in device performance is directly correlated to the nature of the fastest escaping carrier.

scholarly journals A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure

RSC Advances ◽  
2018 ◽  
Vol 8 (37) ◽  
pp. 20585-20592 ◽  
Author(s):  
Ji-Hyeon Park ◽  
R. Nandi ◽  
Jae-Kwan Sim ◽  
Dae-Young Um ◽  
San Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Quantum Well ◽  
Quantum Wells ◽  
Cap Layer ◽  
Multi Quantum Well

Solar cells fabricated with hybrid nanowires comprising InGaN/GaN uniaxial and coaxial multi-quantum wells with an InGaN nano-cap layer.

1.55 Micron Emission from InAs/InP Self-Assembled Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
Ray Murray ◽  
Caroline Bryan ◽  
Chris Button ◽  
D. Spikes ◽  
G. Hill
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Room Temperature ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Wide Range ◽  
Metal Organic ◽  
Self Assembled ◽  
Multi Quantum Well

ABSTRACTSelf-assembled InAs/InP and InAs/InGaAsP quantum dots (QDs) grown by metal-organic chemical vapour epitaxy (MOVPE) exhibit emission at 1.5–1.6 μm at room temperature. P-I-N diodes incorporating a single InAs/InGaAsP QD layer exhibit strong electroluminescence over a wide range of input currents and emit significantly more light per layer than a InGaAs/InGaAsP multi-quantum well device.

THE THEORETICAL RESEARCH ON I-V CURVE IN MULTI-QUANTUM WELLS OF SEMICONDUCTORS

2006 ◽  
Vol 17 (04) ◽  
pp. 561-570
Author(s):  
BIN YANG ◽  
JIE ZHANG ◽  
YONG-FANG ZHAO ◽  
XIAO-GONG JING
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Theoretical Research ◽  
High Quality ◽  
Double Barrier ◽  
Multi Quantum Well ◽  
Double Barrier Structure ◽  
Good Agreement

The I-V curves in multi-quantum wells of different semiconductors are studied theoretically using the formalism of the transmission coefficient directly derived from Schrödinger equation. Al0.5Ga0.5As/GaAs double-barrier quantum well, Al0.29Ga0.71As/GaAs multi-quantum well, and AlSb/InAs double-barrier structure are calculated. The influences of well width, barrier width, temperature, Fermi energy on I-V characteristic curves are discussed in detail. Calculated results show that obvious negative differential resistance effects presented by our simulated I-V curves has a good agreement with previous experiments. Therefore, it can be a theoretical expectation to design experimentally high-quality semiconductor devices.

scholarly journals Особенности электрохимического вольт-фарадного профилирования арсенид-галлиевых светоизлучающих и pHEMT-структур с квантово-размерными областями

2018 ◽  
Vol 52 (8) ◽  
pp. 873 ◽  
Author(s):  
Г.Е. Яковлев ◽  
М.В. Дорохин ◽  
В.И. Зубков ◽  
А.Л. Дудин ◽  
А.В. Здоровейщев ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Quantum Wells ◽  
Charge Carriers ◽  
Surface Layers ◽  
Electrochemical Capacitance ◽  
Light Emitting ◽  
Free Carrier Density ◽  
Capacitance Voltage ◽  
Concentration Depth Profiles

AbstractGaAs light-emitting (LED) and HEMT structures with δ-doped regions, InGaAs/GaAs quantum wells, and surface layers of InAs/GaAs quantum dots were studied by means of the electrochemical capacitance- voltage profiling technique. The concentration depth profiles of free charge carriers were obtained. Charges accumulated in quantum wells and quantum dots, as well as the doping levels of the emitter and δ layers were determined. The band structure and free carrier density distribution over the depth of the samples with different quantum well geometry were simulated. The specific features of electrochemical capacitance- voltage profiling in different heterostructure types are analyzed. A method of integration of capacitance- voltage curves at each etching stage was suggested. This method provides the efficient separation of responses from closely located layers, particularly the quantum well and δ layer.

scholarly journals Carrier dynamics in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures

2007 ◽  
Vol 61 ◽  
pp. 180-184 ◽  
Author(s):  
J L Casas Espinola ◽  
M Dybic ◽  
S Ostapenko ◽  
T V Torchynska ◽  
G Polupan
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Carrier Dynamics ◽  
Inas Quantum Dots ◽  
Quantum Well Structures ◽  
Multi Quantum Well
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