Broad-band high-gain room temperature photodetectors using semiconductor–metal nanofloret hybrids with wide plasmonic response

Nanoscale ◽  
2019 ◽  
Vol 11 (13) ◽  
pp. 6368-6376 ◽  
Author(s):  
Amir Ziv ◽  
Avra Tzaguy ◽  
Zhiyuan Sun ◽  
Shira Yochelis ◽  
Emmanuel Stratakis ◽  
...  
Keyword(s):  
Room Temperature ◽  
Broad Band ◽  
Optoelectronic Device ◽  
High Gain ◽  
Spectral Detection

We present an optoelectronic device for broad spectral detection using SiGe nanowires coupled to a plasmonic antenna.

Fractionation of Plasminogen by Starch Gel Electrophoresis

1964 ◽  
Vol 12 (01) ◽  
pp. 126-136 ◽  
Author(s):  
Karl H. Slotta ◽  
J. D Gonzalez
Keyword(s):  
Gel Electrophoresis ◽  
Room Temperature ◽  
Broad Band ◽  
Caproic Acid ◽  
Starch Gel Electrophoresis ◽  
Full Activity ◽  
Veronal Buffer ◽  
Starch Gel ◽  
Alkaline Range

SummaryWhen urea or ε-amino caproic acid were used as solublizing agents for plasminogen in electrophoretic experiments, only one broad band of the proenzyme was obtained on acetate cellulose, in starch block, and in acrylamide gel. In starch gel electrophoresis, however, both forms of plasminogen – the native or euglobulin and Kline’s or Pseudoglobulin plasminogen – separated into six bands. These migrated toward the cathode at room temperature in borate or veronal buffer in the alkaline range and showed full activity in fibrinagar-streptokinase plates.

Luminescence Properties of Europium-Doped Yttrium Oxides Derived from Their Dodecylsulfate-Templated Mesostructure and Nanotube Forms

2003 ◽  
Vol 775 ◽  
Author(s):  
Tsuyoshi Kijima ◽  
Kenichi Iwanaga ◽  
Tomomi Hamasuna ◽  
Shinji Mohri ◽  
Mitsunori Yada ◽  
...  
Keyword(s):  
Room Temperature ◽  
Broad Band ◽  
Concentration Quenching ◽  
Precipitation Method ◽  
Homogeneous Precipitation ◽  
Bulk Materials ◽  
Main Band ◽  
Homogeneous Precipitation Method ◽  
Order Of Magnitude ◽  
Weak Luminescence

AbstractEuropium-doped hexagonal-mesostructured and nanotubular yttrium oxides templated by dodecylsulfate species as well as surfactant free bulk oxides were synthesized by the homogeneous precipitation method. All the as grown nanostructured or bulk materials with amorphous or poorly crystalline frameworks showed weak luminescence bands at room temperature. On calcination at 1000°C these materials were converted into highly crystalline yttrium oxides, resulting in a total increase in intensity of all the bands by one order of magnitude. In the hexagonal-mesostructured system, the main band due to the 5D0-7F2 transition for the calcined phases showed a sharp but asymmetrical multiplet splitting indicating multiple Eu sites. Concentration quenching was found at a Eu content of 3 mol% or above for these phases. In contrast, the main emission for the calcined solids in the nanotubular system occurred as poorly resolved broad band and the intensity of the main band at higher Eu content was significantly enhanced compared with those for the other two systems.

scholarly journals A Novel Hook-Shaped Antenna Operating at 28 GHz for Future 5G mmwave Applications

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 673
Author(s):  
Mian Kamal ◽  
Shouyi Yang ◽  
Saad Kiani ◽  
Daniyal Sehrai ◽  
Mohammad Alibakhshikenari ◽  
...  
Keyword(s):  
Antenna Array ◽  
Communication Systems ◽  
Broad Band ◽  
High Gain ◽  
Single Element ◽  
Total Efficiency ◽  
Potential Candidate ◽  
Next Generation ◽  
Dual Beam ◽  
Element Array

To address atmospheric attenuation and path loss issues in the mmwave portion of the spectrum, high gain and narrow beam antenna systems are essential for the next generation communication networks. This paper presents a novel hook-shaped antenna array for 28 GHz 5G mmwave applications. The proposed antenna was fabricated on commercially available Rogers 5880 substrate with thickness of 0.508 mm and dimensions of 10 × 8 mm2. The proposed shape consists of a circle with an arc-shaped slot on top of it and T-shaped resonating lengths are introduced in order to attain broad band characteristics having gain of 3.59 dBi with radiation and total efficiency of 92% and 86% for single element. The proposed structure is transformed into a four-element array with total size of 26.9 × 18.5 mm2 in order to increase the gain up to 10.3 dBi at desired frequency of interest. The four-element array is designed such that it exhibits dual-beam response over the entire band of interest and the simulated results agree with fabricated prototype measurements. The proposed antenna array, because of its robustness, high gain, and dual-beam characteristics can be considered as a potential candidate for the next generation 5G communication systems.

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

Local Structure and Er3+ Emission from Pseudo-Amorphous GaN:Er Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
S. B. Aldabergenova ◽  
M. Albrecht ◽  
A. A. Andreev ◽  
C. Inglefield ◽  
J. Viner ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Matrix ◽  
Broad Band ◽  
Resonant Absorption ◽  
Absorption Bands ◽  
Host Matrix ◽  
Transmission Electron ◽  
Infra Red ◽  
Band Edge Luminescence

AbstractWe report on strong Er3+ luminescence in the visible and infra-red regions at room temperature in amorphous GaN:Er thin films prepared by DC magnetron co-sputtering. The intensity of the Er3+ luminescence at 1.535 μm corresponding to 4I13/2 → 4I15/2 transitions is greatly enhanced after annealing at 750°C. In this material GaN crystallites have formed and embedded in the continuous amorphous matrix. The crystallites are 4 to 7 nm in diameter as analyzed by high resolution transmission electron microscopy. The absorption edge, extending three orders of magnitude in absorption coefficient in the spectral range from 0.5 to 3.5 eV, is superimposed on resonant absorption bands of Er3+ ions.The total photoluminescence spectrum consists of welldefined Er3+ luminescence peaks imposed on a broad band edge luminescence from the amorphous GaN host matrix.

scholarly journals The Tunable, Narrow-Bandwidth Excimer Laser, the New Workhorse for Photochemistry in the UV and VUV

1983 ◽  
Vol 3 (1-6) ◽  
pp. 307-310
Author(s):  
K. Hohla ◽  
W. Mückenheim ◽  
D. Basting
Keyword(s):  
Excimer Laser ◽  
Broad Band ◽  
High Gain ◽  
Four Wave Mixing ◽  
Excimer Lasers ◽  
Spectral Brightness ◽  
Wave Mixing ◽  
Laser Transition ◽  
Linear Processes ◽  
Narrow Bandwidth

Excimer lasers are powerful sources of radiation in the UV, providing several laser lines between 157 and 353 nm. The excimer laser transition is bound-free, and thus the emitted wavelengths are broad-band (up to 200 cm−1). In addition the high gain (0.15 cm−1) of the laser gas causes a rather large divergence (>1 mrad) in conventional excimer lasers.A new excimer laser concept is described which improves the spectral brightness in terms of watt/(rad × bandwidth) by three orders of magnitude. This allows, through non-linear processes such as Raman shifting the fundamental output and four-wave-mixing in gases, the generation of new laser lines in the UV and VUV.

Sign in / Sign up

Export Citation Format

Share Document