Dirac-cone induced gating enhancement in single-molecule field-effect transistors

Nanoscale ◽  
2019 ◽  
Vol 11 (27) ◽  
pp. 13117-13125 ◽  
Author(s):  
Hantao Sun ◽  
Xunshan Liu ◽  
Yanjie Su ◽  
Bing Deng ◽  
Hailin Peng ◽  
...  

Dirac-cone induced electrostatic gating enhancement in single-molecule FETs with graphene electrodes and a solid-state local bottom gate.

2020 ◽  
Vol 16 (4) ◽  
pp. 595-607 ◽  
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Shahrizal Rusli ◽  
Nurul Ezaila Alias ◽  
...  

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed. Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.


2018 ◽  
Vol 10 (49) ◽  
pp. 43166-43176 ◽  
Author(s):  
Ke Xu ◽  
Md Mahbubul Islam ◽  
David Guzman ◽  
Alan C. Seabaugh ◽  
Alejandro Strachan ◽  
...  

2020 ◽  
Vol 14 (6) ◽  
pp. 42-51
Author(s):  
Nagendra Athreya ◽  
Aditya Sarathya ◽  
Mingye Xiong ◽  
Jean-Pierre Leburton

2012 ◽  
Vol 717-720 ◽  
pp. 1249-1252 ◽  
Author(s):  
Xue Qing Li ◽  
Petre Alexandrov ◽  
Leonid Fursin ◽  
Christopher Dries ◽  
Jian Hui Zhao

This paper reports the design and experimental demonstration of a novel bi-directional solid-state disconnect (SSD) based on Silicon Carbide (SiC) depletion-mode junction field effect transistors (JFETs) for protecting critical sensitive components in high power systems. The SSD is able to provide a fast disconnect action upon receiving a preset trip current flowing through it and has a very low insertion loss, which makes it suitable for high power applications. For the application in 150kW six-phase power inverter systems, an insertion loss of less than 0.91% and a current fall time of less than 20μs for trip currents of about 800A have been demonstrated experimentally. To the best of our knowledge, there are no other solid-state disconnects available of comparable parameters.


2011 ◽  
Vol 161 (21-22) ◽  
pp. 2226-2229 ◽  
Author(s):  
Fatemeh Gholamrezaie ◽  
Kamal Asadi ◽  
Romero A.H.J. Kicken ◽  
Bea M.W. Langeveld-Voss ◽  
Dago M. de Leeuw ◽  
...  

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Tingting Wei ◽  
Teruo Kanki ◽  
Masashi Chikanari ◽  
Takafumi Uemura ◽  
Tsuyoshi Sekitani ◽  
...  

2020 ◽  
Vol 8 (24) ◽  
pp. 8213-8223 ◽  
Author(s):  
P. Blake J. St. Onge ◽  
Tzu-Chien Chen ◽  
Adam Langlois ◽  
Aneeta Younus ◽  
I Jo Hai ◽  
...  

A new approach to improve charge transport and solid-state morphology in a semiconducting polymer was developed through metal coordination without disruption of the π-conjugation.


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