Dirac-cone induced gating enhancement in single-molecule field-effect transistors

Nanoscale ◽  
2019 ◽  
Vol 11 (27) ◽  
pp. 13117-13125 ◽  
Author(s):  
Hantao Sun ◽  
Xunshan Liu ◽  
Yanjie Su ◽  
Bing Deng ◽  
Hailin Peng ◽  
...  
Keyword(s):  
Solid State ◽  
Single Molecule ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dirac Cone ◽  
Electrostatic Gating ◽  
Bottom Gate

Dirac-cone induced electrostatic gating enhancement in single-molecule FETs with graphene electrodes and a solid-state local bottom gate.

2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors

2020 ◽  
Vol 16 (4) ◽  
pp. 595-607 ◽  
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Shahrizal Rusli ◽  
Nurul Ezaila Alias ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Industry ◽  
Honeycomb Lattice ◽  
Theoretical Studies ◽  
Fabrication Technology ◽  
Dirac Cone ◽  
Free Standing ◽  
Silicene Nanoribbons ◽  
Effect Transistor

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed. Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.

Pulse Dynamics of Electric Double Layer Formation on All-Solid-State Graphene Field-Effect Transistors

2018 ◽  
Vol 10 (49) ◽  
pp. 43166-43176 ◽  
Author(s):  
Ke Xu ◽  
Md Mahbubul Islam ◽  
David Guzman ◽  
Alan C. Seabaugh ◽  
Alejandro Strachan ◽  
...  
Keyword(s):  
Solid State ◽  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Layer Formation ◽  
Pulse Dynamics

2D Solid-State Nanopore Field-Effect Transistors: Comprehensive Computational Methodology for Biosensing Applications

2020 ◽  
Vol 14 (6) ◽  
pp. 42-51
Author(s):  
Nagendra Athreya ◽  
Aditya Sarathya ◽  
Mingye Xiong ◽  
Jean-Pierre Leburton
Keyword(s):  
Solid State ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Computational Methodology

SiC Solid-State Disconnect for High Power System Applications

2012 ◽  
Vol 717-720 ◽  
pp. 1249-1252 ◽  
Author(s):  
Xue Qing Li ◽  
Petre Alexandrov ◽  
Leonid Fursin ◽  
Christopher Dries ◽  
Jian Hui Zhao
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Power Systems ◽  
Insertion Loss ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Experimental Demonstration ◽  
Low Insertion Loss ◽  
A Current

This paper reports the design and experimental demonstration of a novel bi-directional solid-state disconnect (SSD) based on Silicon Carbide (SiC) depletion-mode junction field effect transistors (JFETs) for protecting critical sensitive components in high power systems. The SSD is able to provide a fast disconnect action upon receiving a preset trip current flowing through it and has a very low insertion loss, which makes it suitable for high power applications. For the application in 150kW six-phase power inverter systems, an insertion loss of less than 0.91% and a current fall time of less than 20μs for trip currents of about 800A have been demonstrated experimentally. To the best of our knowledge, there are no other solid-state disconnects available of comparable parameters.

scholarly journals Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors

2011 ◽  
Vol 161 (21-22) ◽  
pp. 2226-2229 ◽  
Author(s):  
Fatemeh Gholamrezaie ◽  
Kamal Asadi ◽  
Romero A.H.J. Kicken ◽  
Bea M.W. Langeveld-Voss ◽  
Dago M. de Leeuw ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Self Assembled Monolayers ◽  
Organic Field Effect Transistors ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Bottom Gate

scholarly journals Enhanced electronic-transport modulation in single-crystalline VO2 nanowire-based solid-state field-effect transistors

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Tingting Wei ◽  
Teruo Kanki ◽  
Masashi Chikanari ◽  
Takafumi Uemura ◽  
Tsuyoshi Sekitani ◽  
...  
Keyword(s):  
Solid State ◽  
Electronic Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Crystalline ◽  
Transport Modulation

Iron-coordinating π-conjugated semiconducting polymer: morphology and charge transport in organic field-effect transistors

2020 ◽  
Vol 8 (24) ◽  
pp. 8213-8223 ◽  
Author(s):  
P. Blake J. St. Onge ◽  
Tzu-Chien Chen ◽  
Adam Langlois ◽  
Aneeta Younus ◽  
I Jo Hai ◽  
...  
Keyword(s):  
Solid State ◽  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Coordination ◽  
Organic Field Effect Transistors ◽  
Semiconducting Polymer ◽  
New Approach ◽  
Polymer Morphology

A new approach to improve charge transport and solid-state morphology in a semiconducting polymer was developed through metal coordination without disruption of the π-conjugation.

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