scholarly journals Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study

Nanoscale ◽  
2020 ◽  
Vol 12 (3) ◽  
pp. 2089-2102 ◽  
Author(s):  
Vivek Beladiya ◽  
Martin Becker ◽  
Tahsin Faraz ◽  
W. M. M. (Erwin) Kessels ◽  
Paul Schenk ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Silicon Dioxide ◽  
Computational Study ◽  
Chemical Properties ◽  
Atomic Layer ◽  
Physical And Chemical Properties ◽  
Layer Deposition ◽  
Physical And Chemical ◽  
And Chemical Properties

PEALD of thin SiO2 films assisted by bias is a powerful technique to tailor their physical and chemical properties.

Physical and Chemical Properties of Silicon Dioxide Film Deposited by New Process

1987 ◽  
Vol 105 ◽  
Author(s):  
Takuji Goda ◽  
Hirotsugu Nagayama ◽  
Akihiro Hishinuma ◽  
Hideo Kawahara
Keyword(s):  
Silicon Dioxide ◽  
Room Temperature ◽  
Etching Rate ◽  
Chemical Properties ◽  
Industrial Area ◽  
Physical And Chemical Properties ◽  
Silicon Dioxide Film ◽  
Wide Range ◽  
Physical And Chemical ◽  
And Chemical Properties

AbstractA new coating process of silicon dioxide (SiO2) “LPD” process, has been developed recently. Silicon dioxide (SiO2) film can be deposited on any substrate at the room temperature by immersing in hexafluorosilicic acid (H2SiF6).In this study, physical and chemical properties of the “LPD- SiO2” film were investigated by using XPS, IR, ellipsometry, and etch rate measurement. The properties of this film deposited at the room temperature were almost the same as those of plasma CVD. The “LPD-SiO2” film without annealing was contained traces of F and OH. However, by annealing, F and OH were rapidly evaporated from the film and the film was getting densified.As the “LPD-SiO2” film deposited at the room temperature showed very good results of chemical etching rate and of step coverage, it is expected that it is possible to use this “LPD- SiO2” film in the wide range of industrial area.

High Sensitivity Humidity Sensor Based on ZnSnO3 Composite Nanocube

2013 ◽  
Vol 594-595 ◽  
pp. 872-876
Author(s):  
N.D. Md Sin ◽  
M.Z. Musa ◽  
M.H. Mamat ◽  
S. Ahmad ◽  
A. Abdul Aziz ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Humidity Sensor ◽  
Chemical Properties ◽  
High Sensitivity ◽  
Physical And Chemical Properties ◽  
Sensor Performance ◽  
Semiconducting Material ◽  
Physical And Chemical ◽  
And Chemical Properties

The performance of nanocomposites semiconducting material used as a sensor is very much depending upon physical and chemical properties of the material. In this paper we address sensitivity of ZnSnO3thin film deposited by hydrothermal deposition in terms of its behavior towards humidity variations. The electrical, optical and structural properties of ZnSnO3thin film deposit at different volume of solvent (50 ml and 70 ml) grown by novel deposition of ZnSnO3hydrothermal with low temperature 95°C are also reviewed. The sensor performance of ZnSnO3thin film prepared at 50 ml volume show high sensitivity towards humidity. Using FESEM it was noted that the nanocube of ZnSnO3thin films growth on ZnO template with the size of nanocube is 100 to 140nm by varying the volume of the solvent.

scholarly journals Sensing the polar molecules MH3 (M = N, P, or As) with a Janus NbTeSe monolayer

2020 ◽  
Vol 44 (19) ◽  
pp. 7932-7940 ◽  
Author(s):  
Xiaoyong Yang ◽  
Deobrat Singh ◽  
Zhitong Xu ◽  
Rajeev Ahuja
Keyword(s):  
Electric Field ◽  
Chemical Properties ◽  
Polar Molecules ◽  
Physical And Chemical Properties ◽  
Device Applications ◽  
Physical And Chemical ◽  
And Chemical Properties

The unique intrinsic electric field and prominent physical and chemical properties of Janus TMDs have attracted extensive attention for device applications.

Mapping of the potential at the end of buckytubes by electron holography

1994 ◽  
Vol 52 ◽  
pp. 764-765
Author(s):  
X. Lin ◽  
V. P. Dravid
Keyword(s):  
Electric Field ◽  
Potential Distribution ◽  
Imaging Technique ◽  
Chemical Properties ◽  
Electron Holography ◽  
Physical And Chemical Properties ◽  
Electron Wave ◽  
Direct Observations ◽  
Physical And Chemical ◽  
And Chemical Properties

Measuring the surface and mean inner potential at the end of buckytubes will offer a lot of information about their physical and chemical properties. Such properties are closely related to fundamental mechanisms of the growth of the buckytubes that grow on the cathode with their axes aligned along the direction of the electric field (1), implicating the presence of the field in the formation mechanism.Direct observations of surface and inner potential distribution at nanometer level by electron holography were reported in several cases (2). Holography is the only imaging technique that can retrieve the phase of the electron wave, which directly related to the surface and inner potential. In this contribution, electron holography was employed to obtain the mapping of the phase of the electron wave traveled through the end of nanotubes.The holograms were recorded on negatives using a Hitachi HF-2000 with a cold emission gun, operated at 200kv.

Al-Cu Alloy Films Characterization and Studies Using TOF-SIMS, XPS, AFM, EBSD and TEM

2014 ◽  
Author(s):  
J.J. Shao ◽  
Y.Q. Shen ◽  
Y. Shen ◽  
Y.K. Zhou ◽  
K. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Failure Analysis ◽  
Copper Alloys ◽  
Chemical Properties ◽  
Physical And Chemical Properties ◽  
Cu Alloy ◽  
Tof Sims ◽  
Aluminum Copper Alloys ◽  
Physical And Chemical ◽  
And Chemical Properties

Abstract Aluminum-copper alloys are popular for many applications that take advantage of the combination of properties in the alloys. This paper describes the use of multiple advanced failure analysis tools to analyze the physical and chemical properties of Al-Cu alloy thin films.

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