scholarly journals Facile synthesis of exfoliated vermiculite nanosheets as a thermal stabilizer in polyvinyl chloride resin

RSC Advances ◽  
2019 ◽  
Vol 9 (34) ◽  
pp. 19675-19679
Author(s):  
Weiliang Tian ◽  
Zhong Li ◽  
Kewei Zhang ◽  
Zhenhong Ge
Keyword(s):  
Thermal Stability ◽  
Hydrogen Chloride ◽  
Anion Exchange ◽  
Polyvinyl Chloride ◽  
Facile Synthesis ◽  
Excellent Thermal Stability ◽  
Thermal Stabilizer

Well-defined vermiculite nanosheets are exfoliated by a facile water-assisted anion-exchange approach. As its negatively charged laminates can stabilize hydrogen chloride, the VMT nanosheets show excellent thermal stability for PVC resin.

Formation of highly luminescent cesium bismuth halide perovskite quantum dots tuned by anion exchange

2018 ◽  
Vol 54 (30) ◽  
pp. 3779-3782 ◽  
Author(s):  
Yongbing Lou ◽  
Mengying Fang ◽  
Jinxi Chen ◽  
Yixin Zhao
Keyword(s):  
Thermal Stability ◽  
Quantum Dots ◽  
Exchange Reaction ◽  
Anion Exchange ◽  
Wavelength Range ◽  
Quantum Yields ◽  
Excellent Thermal Stability ◽  
Perovskite Quantum Dots ◽  
Halide Perovskite ◽  
Anion Exchange Reaction

Cs3Bi2Br9 quantum dots, with excellent thermal stability and photoluminescence quantum yields of up to 22%, have been prepared. A PL wavelength range from 380 to 526 nm could be achieved through a fast reversible anion exchange reaction.

scholarly journals Facile synthesis of catalytically active CeO2 for soot combustion

2015 ◽  
Vol 5 (3) ◽  
pp. 1941-1952 ◽  
Author(s):  
Qun Shen ◽  
Minfang Wu ◽  
Hui Wang ◽  
Chi He ◽  
Zhengping Hao ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Soot Oxidation ◽  
Soot Combustion ◽  
Facile Synthesis ◽  
Excellent Thermal Stability ◽  
Catalytically Active

Facile synthesis of catalytically active CeO2 with excellent thermal stability for soot oxidation.

Preparation of Poly (aryl ether) Anion Ionomers with N-Methyl Imidazolium Groups

2012 ◽  
Vol 560-561 ◽  
pp. 221-225
Author(s):  
Qun Hui Hu ◽  
Wen Xiao Wang ◽  
Shu Bo Wang ◽  
Yu Ming Shang ◽  
Min Xu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrochemical Properties ◽  
Anion Exchange ◽  
Room Temperature ◽  
Anion Exchange Membrane ◽  
Anion Exchange Membranes ◽  
Aryl Ether ◽  
Excellent Thermal Stability ◽  
Methyl Imidazole ◽  
Exchange Membrane

Anion exchange membranes based on poly(aryl ether oxadiazole)s (FPAEO) were prepared by quaternization of bromomethylated FPAEO with N-methyl imidazole. The structures of the obtained polymers were characterized and confirmed with 1H-NMR measurement. The physical and electrochemical properties of anion exchange membranes were also studied. The conductivity of FPAEO-xMIM membranes were almost higher than 10−2 S/cm at room temperature. In addition, TGA revealed that the AEMs based on imidazolium salts have excellent thermal stability. The experimental results suggested that the obtained AEMs may be potential membranes for anion exchange membrane fuel cells

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

scholarly journals Boosted piezoelectricity with excellent thermal stability in tetragonal NaNbO3-based ceramics

2020 ◽  
Author(s):  
Lu Wang ◽  
Shengdong Sun ◽  
Huajie Luo ◽  
Yang Ren ◽  
Hui Liu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Temperature Stability ◽  
Lead Free ◽  
Excellent Thermal Stability ◽  
Lead Free Ceramics ◽  
Piezoelectric Performance

The realization of high piezoelectric performance and excellent temperature stability simultaneously in lead-free ceramics is the key for replacing Pb-containing perovskites in industry. In this study, large piezoelectric performance (d33...

scholarly journals The influence of an ultra-high resistivity Ta underlayer on perpendicular magnetic anisotropy in Ta/Pt/Co/Pt heterostructures

RSC Advances ◽  
2020 ◽  
Vol 10 (19) ◽  
pp. 11219-11224
Author(s):  
Wei Zhang ◽  
Xiaoxiong Jia ◽  
Rui Wang ◽  
Huihui Liu ◽  
Zhengyu Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Magnetic Anisotropy ◽  
High Stability ◽  
Essential Role ◽  
Perpendicular Magnetic Anisotropy ◽  
Low Energy ◽  
High Resistivity ◽  
Excellent Thermal Stability ◽  
Low Energy Consumption

Thin films with perpendicular magnetic anisotropy (PMA) play an essential role in the development of technologies due to their excellent thermal stability and potential application in devices with high density, high stability, and low energy consumption.

Sign in / Sign up

Export Citation Format

Share Document