scholarly journals Design and synthesis of stable indigo polymer semiconductors for organic field-effect transistors with high fluoride sensitivity and selectivity

RSC Advances ◽  
2019 ◽  
Vol 9 (45) ◽  
pp. 26230-26237 ◽  
Author(s):  
Jenner H. L. Ngai ◽  
George Y. Chang ◽  
Xiguang Gao ◽  
Xiaocheng Zhou ◽  
Arthur D. Hendsbee ◽  
...  

A p-type indigo polymer semiconductor is developed for water-gated organic field-effect transistors (WGOFET) for sensing fluoride ions.

2017 ◽  
Vol 1 (12) ◽  
pp. 2423-2456 ◽  
Author(s):  
Longxian Shi ◽  
Yunlong Guo ◽  
Wenping Hu ◽  
Yunqi Liu

Design and effective synthesis methods for high-performance polymer semiconductor-based OFETs.


2019 ◽  
Vol 7 (15) ◽  
pp. 4543-4550 ◽  
Author(s):  
Shuqiong Lan ◽  
Yujie Yan ◽  
Huihuang Yang ◽  
Guocheng Zhang ◽  
Yun Ye ◽  
...  

The performance of solution-processed n-type OFETs was improved via a facile effective route, by blending a p-type organic semiconductor into the n-type polymer semiconductor.


2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...


2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.


2006 ◽  
Vol 421 (4-6) ◽  
pp. 395-398 ◽  
Author(s):  
Tomohiro Taguchi ◽  
Hiroshi Wada ◽  
Takuya Kambayashi ◽  
Bunpei Noda ◽  
Masanao Goto ◽  
...  

2019 ◽  
Vol 7 ◽  
Author(s):  
Rosaria Anna Picca ◽  
Kyriaki Manoli ◽  
Eleonora Macchia ◽  
Angelo Tricase ◽  
Cinzia Di Franco ◽  
...  

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