A CoOx/FeOx heterojunction on carbon nanotubes prepared by plasma-enhanced atomic layer deposition for the highly efficient electrocatalysis of oxygen evolution reactions

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

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Direct formation of anatase TiO2nanoparticles on carbon nanotubes by atomic layer deposition and their photocatalytic properties

Nanotechnology ◽

10.1088/0957-4484/27/40/405702 ◽

2016 ◽

Vol 27 (40) ◽

pp. 405702 ◽

Cited By ~ 7

Author(s):

Sheng-Hsin Huang ◽

Shih-Yun Liao ◽

Chih-Chieh Wang ◽

Chi-Chung Kei ◽

Jon-Yiew Gan ◽

...

Keyword(s):

Carbon Nanotubes ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Photocatalytic Properties ◽

Layer Deposition ◽

Direct Formation

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Enhanced Water Purification via Redox Interfaces Created by an Atomic Layer Deposition Strategy

Environmental Science Nano ◽

10.1039/d1en00085c ◽

2021 ◽

Author(s):

Liming Huang ◽

Tingting Yan ◽

Alaa El Din Mahmoud ◽

Shuangxi Li ◽

Jianping Zhang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Water Purification ◽

Water Scarcity ◽

Atomic Layer ◽

Highly Efficient ◽

Layer Deposition

The crisis of water scarcity has become one of the most urgent issues to be settled. It is still a challenge to develop a highly efficient water purification technology. In...

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Modulated electrochemical oxygen evolution catalyzed by MoS2 nanoflakes from atomic layer deposition

Nanotechnology ◽

10.1088/1361-6528/aaef13 ◽

2019 ◽

Vol 30 (9) ◽

pp. 095402 ◽

Cited By ~ 2

Author(s):

Yazhou Huang ◽

Lei Liu ◽

Xiaolin Liu

Keyword(s):

Atomic Layer Deposition ◽

Oxygen Evolution ◽

Atomic Layer ◽

Layer Deposition ◽

Electrochemical Oxygen

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Atomic layer deposition triggered Fe-In-S cluster and gradient energy band in ZnInS photoanode for improved oxygen evolution reaction

Nature Communications ◽

10.1038/s41467-021-25609-0 ◽

2021 ◽

Vol 12 (1) ◽

Author(s):

Linxing Meng ◽

Jinlu He ◽

Xiaolong Zhou ◽

Kaimo Deng ◽

Weiwei Xu ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Oxygen Evolution ◽

Oxygen Evolution Reaction ◽

Energy Band ◽

High Performance ◽

Carrier Transport ◽

Atomic Layer ◽

Onset Potential ◽

Layer Deposition ◽

Gradient Energy

AbstractVast bulk recombination of photo-generated carriers and sluggish surface oxygen evolution reaction (OER) kinetics severely hinder the development of photoelectrochemical water splitting. Herein, through constructing a vertically ordered ZnInS nanosheet array with an interior gradient energy band as photoanode, the bulk recombination of photogenerated carriers decreases greatly. We use the atomic layer deposition technology to introduce Fe-In-S clusters into the surface of photoanode. First-principles calculations and comprehensive characterizations indicate that these clusters effectively lower the electrochemical reaction barrier on the photoanode surface and promote the surface OER reaction kinetics through precisely affecting the second and third steps (forming processes of O* and OOH*) of the four-electron reaction. As a result, the optimal photoanode exhibits the high performance with a significantly enhanced photocurrent of 5.35 mA cm−2 at 1.23 VRHE and onset potential of 0.09 VRHE. Present results demonstrate a robust platform for controllable surface modification, nanofabrication, and carrier transport.

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Deposition of Pt Nanoparticles on Oxygen Plasma Treated Carbon Nanotubes by Atomic Layer Deposition

ECS Transactions ◽

10.1149/1.2981924 ◽

2019 ◽

Vol 16 (2) ◽

pp. 855-862 ◽

Cited By ~ 7

Author(s):

Yang-Chih Hsueh ◽

Chia-Te Hu ◽

Chih-Chieh Wang ◽

Chueh Liu ◽

Tsong-Pyng Perng

Keyword(s):

Carbon Nanotubes ◽

Atomic Layer Deposition ◽

Oxygen Plasma ◽

Pt Nanoparticles ◽

Atomic Layer ◽

Layer Deposition ◽

Treated Carbon

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Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition

Nanomaterials ◽

10.3390/nano9081085 ◽

2019 ◽

Vol 9 (8) ◽

pp. 1085 ◽

Cited By ~ 1

Author(s):

Kemelbay ◽

Tikhonov ◽

Aloni ◽

Kuykendall

Keyword(s):

Carbon Nanotubes ◽

Atomic Layer Deposition ◽

Field Effect Transistors ◽

Atomic Layer ◽

Oxide Thickness ◽

Ambient Conditions ◽

Nucleation Layer ◽

Layer Deposition ◽

High K ◽

High K Dielectric

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites—especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT’s exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.

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