Impact of new skeletal isomerization in polymer semiconductors

2019 ◽  
Vol 7 (35) ◽  
pp. 10860-10867 ◽  
Author(s):  
Jingjing Ji ◽  
Xiaomin Wu ◽  
Ping Deng ◽  
Dagang Zhou ◽  
Dengxiao Lai ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Skeletal Isomerization ◽  
Organic Field Effect Transistors ◽  
Aromatic Group ◽  
Polymer Semiconductors ◽  
High Performance Polymer

A new skeletal isomerization strategy for achieving high-performance polymer semiconductors based on asymmetric aromatic group-flanked diketopyrrolopyrrole units for application in organic field-effect transistors was highlighted.

Design and effective synthesis methods for high-performance polymer semiconductors in organic field-effect transistors

2017 ◽  
Vol 1 (12) ◽  
pp. 2423-2456 ◽  
Author(s):  
Longxian Shi ◽  
Yunlong Guo ◽  
Wenping Hu ◽  
Yunqi Liu
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Synthesis Methods ◽  
Organic Field Effect Transistors ◽  
Polymer Semiconductors ◽  
High Performance Polymer ◽  
Polymer Semiconductor ◽  
Effective Synthesis

Design and effective synthesis methods for high-performance polymer semiconductor-based OFETs.

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

Low temperature cross-linked, high performance polymer gate dielectrics for solution-processed organic field-effect transistors

2015 ◽  
Vol 6 (32) ◽  
pp. 5884-5890 ◽  
Author(s):  
Shengxia Li ◽  
Linrun Feng ◽  
Jiaqing Zhao ◽  
Xiaojun Guo ◽  
Qing Zhang
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Cross Linking ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
High Performance Polymer

Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.

Doping Polymer Semiconductors by Organic Salts: Toward High-Performance Solution-Processed Organic Field-Effect Transistors

ACS Nano ◽  
2018 ◽  
Vol 12 (4) ◽  
pp. 3938-3946 ◽  
Author(s):  
Yuanyuan Hu ◽  
Zachary D. Rengert ◽  
Caitlin McDowell ◽  
Michael J. Ford ◽  
Ming Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Salts ◽  
Solution Processed ◽  
Polymer Semiconductors

Simultaneous enhancement of charge density and molecular stacking order of polymer semiconductors by viologen dopants for high performance organic field-effect transistors

2018 ◽  
Vol 6 (20) ◽  
pp. 5497-5505 ◽  
Author(s):  
Dong-Hyeon Lee ◽  
Minji Kang ◽  
Dae-Hee Lim ◽  
Yunseul Kim ◽  
Jiyoul Lee ◽  
...  
Keyword(s):  
Charge Density ◽  
Conjugated Polymer ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Polymer Semiconductors ◽  
Stacking Order ◽  
Molecular Stacking

Simultaneous enhancement of both charge density and favourable molecular stacking order by the incorporation of a molecular dopant in π-conjugated polymer.

scholarly journals Hysteresis-Free, High-Performance Polymer-Dielectric Organic Field-Effect Transistors Enabled by Supercritical Fluid

Research ◽  
2020 ◽  
Vol 2020 ◽  
pp. 1-10
Author(s):  
Yuhao Shi ◽  
Yingkai Zheng ◽  
Jialiang Wang ◽  
Ran Zhao ◽  
Tao Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Carrier Mobility ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Dielectric Materials ◽  
Organic Field Effect Transistors ◽  
Polymer Dielectric ◽  
Flexible Polymer ◽  
High Performance Polymer

Organic field-effect transistors (OFETs) are of the core units in organic electronic circuits, and the performance of OFETs replies critically on the properties of their dielectric layers. Owing to the intrinsic flexibility and natural compatibility with other organic components, organic polymers, such as poly(vinyl alcohol) (PVA), have emerged as highly interesting dielectric materials for OFETs. However, unsatisfactory issues, such as hysteresis, high subthreshold swing, and low effective carrier mobility, still considerably limit the practical applications of the polymer-dielectric OFETs for high-speed, low-voltage flexible organic circuits. This work develops a new approach of using supercritical CO2 fluid (SCCO2) treatment on PVA dielectrics to achieve remarkably high-performance polymer-dielectric OFETs. The SCCO2 treatment is able to completely eliminate the hysteresis in the transfer characteristics of OFETs, and it can also significantly reduce the device subthreshold slope to 0.25 V/dec and enhance the saturation regime carrier mobility to 30.2 cm2 V−1 s−1, of which both the numbers are remarkable for flexible polymer-dielectric OFETs. It is further demonstrated that, coupling with an organic light-emitting diode (OLED), the SCCO2-treated OFET is able to function very well under fast switching speed, which indicates that an excellent switching behavior of polymer-dielectric OFETs can be enabled by this SCCO2 approach. Considering the broad and essential applications of OFETs, we envision that this SCCO2 technology will have a very broad spectrum of applications for organic electronics, especially for high refresh rate and low-voltage flexible display devices.

Plastic Electronics: The Influence of Morphology on High-Performance Polymer Field-Effect Transistors (Adv. Mater. 2/2009)

2009 ◽  
Vol 21 (2) ◽  
pp. NA-NA ◽  
Author(s):  
Hoi Nok Tsao ◽  
Don Cho ◽  
Jens Wenzel Andreasen ◽  
Ali Rouhanipour ◽  
Dag W. Breiby ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Plastic Electronics ◽  
High Performance Polymer
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