A progressive learning method for predicting the band gap of ABO3 perovskites using an instrumental variable

2020 ◽  
Vol 8 (9) ◽  
pp. 3127-3136 ◽  
Author(s):  
Changjiao Li ◽  
Hua Hao ◽  
Ben Xu ◽  
Guanghui Zhao ◽  
Lihao Chen ◽  
...  

A progressive learning method with an instrumental variable and bond-valence vector sums was used to improve the bandgap prediction precision.

1996 ◽  
Vol 29 (1) ◽  
pp. 4977-4982
Author(s):  
Boo-Ho Yang ◽  
Shih-Hung Li ◽  
Haruhiko H. Asada

2021 ◽  
Author(s):  
Taisong Wang ◽  
Wenli Qiao ◽  
Ying Wang ◽  
Jingyi Wang ◽  
Yang Lv ◽  
...  

Abstract Purpose To propose and validate a total-body PET (TB-PET) guided deep progressive learning method (DPR) for low-dose clinical imaging of standard axial field-of-view PET/CT scanner (SAFOV-PET).Methods List-mode raw data from a total of 182 scans were collected, including 100 patient scans from a TB-PET, and 15 phantom and 67 patient scans from a SAFOV-PET. Neural networks employed in DPR were trained with the high-quality images obtained from the TB-PET using a progressive learning strategy and evaluated on a SAFOV-PET through three stages of studies. The CTN phantom was firstly used to verify the effectiveness of protocols in DPR and OSEM algorithms. Subsequently, list-mode rawdata from retrospective and prospective PET oncological patients (n=26 and 41, respectively) were rebinned into short duration scans (referred as to DPR_full, DPR_1/2, DPR_1/3, and DPR_1/4), and reconstructed with DPR. Full-duration data were reconstructed with OSEM to generate images as a reference. In the retrospective study, the image quality was evaluated using the metrics of standard uptake value (SUV) and target-to-liver ratio (TLR) in lesions, and coefficient of variation (COV) in the liver, which provided evidence for the subsequent study with real-world low-dose injection. In the prospective study, the quantification accuracy was evaluated with the agreement of SUVs in the liver, the blood pool, and the muscle between the DPR and the OSEM images. Quantitative analysis was also performed with the SUV and the TLR in lesions, furthermore on small lesions with a diameter no more than 10mm. In addition, qualitative analysis was performed using a 5-point Likert scale on the following perspectives: contrast, noise, and diagnostic confidence. Results The protocols used in the study were verified to meet the EANM EARL2 requirements. In the retrospective study, the DPR group with one-third acquisition time can yield a comparable image quality to the reference. In the prospective study, good agreement of the SUVs between DPR and OSEM was found in all the selected background tissues even if the injected dose was reduced to 1/3. Both quantitative and qualitative results demonstrated that the DPR_1/3 group showed no significant difference with the reference regarding the liver COV and subjective scores. The lesion SUVs and TLRs in the DPR_1/3 group were significantly enhanced compared with the reference, even for small lesions. Conclusions The proposed DPR method can reduce the injected dose of SAFOV-PET scan by up to 2/3 in a real-world deployment while maintaining image quality.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Lieke Michielsen ◽  
Marcel J. T. Reinders ◽  
Ahmed Mahfouz

AbstractSupervised methods are increasingly used to identify cell populations in single-cell data. Yet, current methods are limited in their ability to learn from multiple datasets simultaneously, are hampered by the annotation of datasets at different resolutions, and do not preserve annotations when retrained on new datasets. The latter point is especially important as researchers cannot rely on downstream analysis performed using earlier versions of the dataset. Here, we present scHPL, a hierarchical progressive learning method which allows continuous learning from single-cell data by leveraging the different resolutions of annotations across multiple datasets to learn and continuously update a classification tree. We evaluate the classification and tree learning performance using simulated as well as real datasets and show that scHPL can successfully learn known cellular hierarchies from multiple datasets while preserving the original annotations. scHPL is available at https://github.com/lcmmichielsen/scHPL.


Author(s):  
Joanna L. Batstone

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.


Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.


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