scholarly journals Dual-source vacuum deposition of pure and mixed halide 2D perovskites: thin film characterization and processing guidelines

2020 ◽  
Vol 8 (6) ◽  
pp. 1902-1908
Author(s):  
Maria-Grazia La-Placa ◽  
Dengyang Guo ◽  
Lidón Gil-Escrig ◽  
Francisco Palazon ◽  
Michele Sessolo ◽  
...  

Vacuum deposited 2D perovskites show high crystallinity at low temperatures. Mixed halide and wide bandgap compounds, however, can be challenging to obtain.

2002 ◽  
Vol 725 ◽  
Author(s):  
S.B. Phelan ◽  
B.S. O'Connell ◽  
G. Farrell ◽  
G. Chambers ◽  
H.J. Byrne

AbstractThe current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.


1995 ◽  
Vol 8 (8) ◽  
pp. 667-672 ◽  
Author(s):  
D P Almond ◽  
A K Barker ◽  
A C Bento ◽  
S K Singh ◽  
N J Appleyard ◽  
...  

Author(s):  
Xiao Tang ◽  
Kuanghui Li ◽  
Che-Hao Liao ◽  
Dongxing Zheng ◽  
chen Liu ◽  
...  

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...


2002 ◽  
Vol 729 ◽  
Author(s):  
J. Gaspar ◽  
Haohua Li ◽  
P.P. Freitas ◽  
V. Chu ◽  
J.P. Conde

AbstractBilayer microbridges of aluminum and hydrogenated amorphous silicon are fabricated using thin film technology and surface micromachining at low temperatures on glass substrates. The microstructure is electrostatically actuated by applying a voltage between the bridge and a metal gate counter electrode placed beneath it. The movement is measured with a precision close to 0.1 Å by sensing the magnetic field of a permanent magnet, deposited and patterned on top of the microbridge, with an integrated spin valve magnetic sensor. The deflection of the bridge is at the same time monitored using an optical setup. The deflection of the structures is studied as a function of the driving applied gate voltage and bridge length and experimental results are analyzed with an electromechanical model.


2006 ◽  
Vol 203 (2) ◽  
pp. 379-385
Author(s):  
Qingduan Meng ◽  
Xueqiang Zhang ◽  
Fei Li ◽  
Jiandong Huang ◽  
Xiaohong Zhu ◽  
...  

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