A carbene stabilized precursor for the spatial atomic layer deposition of copper thin films

2020 ◽  
Vol 56 (89) ◽  
pp. 13752-13755
Author(s):  
Nils Boysen ◽  
Bujamin Misimi ◽  
Arbresha Muriqi ◽  
Jan-Lucas Wree ◽  
Tim Hasselmann ◽  
...  

This is the first report on a plasma enhanced spatial atomic layer deposition (APP-ALD) process at atmospheric pressure to grow conducting metallic Cu thin films from a carbene stabilized precursor.

2017 ◽  
Vol 9 (2) ◽  
pp. 021203 ◽  
Author(s):  
Viet Huong Nguyen ◽  
João Resende ◽  
Carmen Jiménez ◽  
Jean-Luc Deschanvres ◽  
Perrine Carroy ◽  
...  

APL Materials ◽  
2015 ◽  
Vol 3 (4) ◽  
pp. 040701 ◽  
Author(s):  
Robert L. Z. Hoye ◽  
David Muñoz-Rojas ◽  
Shelby F. Nelson ◽  
Andrea Illiberi ◽  
Paul Poodt ◽  
...  

2018 ◽  
Vol 57 (49) ◽  
pp. 16224-16227 ◽  
Author(s):  
Nils Boysen ◽  
Tim Hasselmann ◽  
Sarah Karle ◽  
Detlef Rogalla ◽  
Detlef Theirich ◽  
...  

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.


CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.


2021 ◽  
pp. 2102556
Author(s):  
Jinseon Lee ◽  
Jeong‐Min Lee ◽  
Hongjun Oh ◽  
Changhan Kim ◽  
Jiseong Kim ◽  
...  

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce

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