scholarly journals Wide optical gap B-doped nc-Si thin films with advanced crystallinity and conductivity on transparent flexible substrates for potential low-cost flexible electronics including nc-Si superstrate p–i–n solar cells

2021 ◽  
Author(s):  
Debajyoti Das ◽  
Chandralina Patra

The current boost in flexible energy harvesting devices demands the fabrication of solar cells on non-rigid, light-weight and cheap substrates to make roll-to-roll processing technology economically viable.

2001 ◽  
Vol 668 ◽  
Author(s):  
Vijay K. Kapur ◽  
Matthew Fisher ◽  
Robin Roe

ABSTRACTA novel, non-vacuum and a patented process developed by ISET for manufacturing terrestrial CIGS solar cells was successfully applied to fabricate CIGS solar cells on flexible 50 μm thick Mo foil for space power applications. Solar cells of area 5.0 cm2 were fabricated with their AM0 efficiency approaching 9.0% with an estimated power density of 250 watts/kg. With further improvements it is possible to fabricate CIGS solar cells with AM0 efficiencies approaching 13%. This process can be used to fabricate low cost, light-weight CIGS solar cells on a variety of flexible substrates much lighter than Mo foil to achieve power densities approaching 1.0 kW/kg.


2013 ◽  
Vol 844 ◽  
pp. 158-161 ◽  
Author(s):  
M.I. Maksud ◽  
Mohd Sallehuddin Yusof ◽  
M. Mahadi Abdul Jamil

Recently low cost production is vital to produce printed electronics by roll to roll manufacturing printing process like a flexographic. Flexographic has a high speed technique which commonly used for printing onto large area flexible substrates. However, the minimum feature sizes achieved with roll to roll printing processes, such as flexographic is in the range of fifty microns. The main contribution of this limitation is photopolymer flexographic plate unable to be produced finer micron range due to film that made by Laser Ablation Mask (LAMs) technology not sufficiently robust and consequently at micron ranges line will not be formed on the printing plate. Hence, polydimethylsiloxane (PDMS) is used instead of photopolymer. Printing trial had been conducted and multiple solid lines successfully printed for below fifty microns line width with no interference between two adjacent lines of the printed images.


2011 ◽  
Vol 28 (10) ◽  
pp. 108801 ◽  
Author(s):  
Chang Yan ◽  
Fang-Yang Liu ◽  
Yan-Qing Lai ◽  
Jie Li ◽  
Ye-Xiang Liu

2018 ◽  
Vol 8 (7) ◽  
pp. 1127 ◽  
Author(s):  
Chongsei Yoon ◽  
Buil Jeon ◽  
Giwan Yoon

In this paper, we present a study of various ZnO/SiO2-stacked thin film structures for flexible micro-energy harvesting devices. Two groups of micro-energy harvesting devices, SiO2/ZnO/SiO2 micro-energy generators (SZS-MGs) and ZnO/SiO2/ZnO micro-energy generators (ZSZ-MGs), were fabricated by stacking both SiO2 and ZnO thin films, and the resulting devices were characterized. With a particular interest in the fabrication of flexible devices, all the ZnO and SiO2 thin films were deposited on indium tin oxide (ITO)-coated polyethylene naphthalate (PEN) substrates using a radio frequency (RF) magnetron sputtering technique. The effects of the thickness and/or position of the SiO2 films on the device performance were investigated by observing the variations of output voltage in comparison with that of a control sample. As a result, compared to the ZnO single-layer device, all the ZSZ-MGs showed much better output voltages, while all the SZS-MG showed only slightly better output voltages. Among the ZSZ-MGs, the highest output voltages were obtained from the ZSZ-MGs where the SiO2 thin films were deposited using a deposition power of 150 W. Overall, the device performance seems to depend significantly on the position as well as the thickness of the SiO2 thin films in the ZnO/SiO2-stacked multilayer structures, in addition to the processing conditions.


2015 ◽  
Vol 30 (5) ◽  
pp. 306-312 ◽  
Author(s):  
S. Chen ◽  
J. Tao ◽  
H. Tao ◽  
Y. Shen ◽  
L. Zhu ◽  
...  

Author(s):  
Khalid Alzoubi ◽  
Susan Lu ◽  
Bahgat Sammakia ◽  
Mark Poliks

Flexible electronics represent an emerging area in the electronics packaging and systems integration industry with the potential for new product development and commercialization in the near future. Manufacturing electronics on flexible substrates will produce low cost devices that are rugged, light, and flexible. However, electronic systems are vulnerable to failures caused by mechanical and thermal stresses. For electronic systems on flexible substrates repeated stresses below the ultimate tensile strength or even below the yield strength will cause failures in the thin films. It is known that mechanical properties of thin films are different from those of bulk materials; so, it is difficult to extrapolate bulk material properties on thin film materials. The objective of this work is to study the behavior of thin-film metal coated flexible substrates under high cyclic bending fatigue loading. Polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) are widely used substrates in the fabrication of microelectronic devices. Factors affecting the fatigue life of thin-film coated flexible substrates were studied, including thin film thickness, temperature, and humidity. A series of experiments for sputter-deposited copper on PET substrates were performed. Electrical resistance and crack growth rate were monitored during the experiments at specified time intervals. High magnification images were obtained to observe the crack initiation and propagation in the metal film. Statistical analysis based on design of experiments concepts was performed to identify the main factors and factor’s interaction that affect the life of a thin-film coated substrate. The results of the experiments showed that the crack starts in the middle of the sample and slowly grows toward the edges. Electrical resistance increases slightly during the test until the crack length covers about 90% of the total width of the sample where a dramatic increase in the resistance takes place.


2001 ◽  
Vol 15 (17n19) ◽  
pp. 605-608 ◽  
Author(s):  
A. NUÑEZ ◽  
P. K. NAIR ◽  
M. T. S. NAIR

Following the model of DeVos and Pauwels (1981), we calculated the spectral factor of efficiencies (η1) for n +-p or n +-i-p heterojunctions that can be formed by different thin absorber materials (p-type or intrinsic(i)) with n +-type CdS thin films produced by conversion of chemically deposited CdS thin films by doping with Cl or In as reported before. The materials with η1 comparable to that of CuInSe 2 (Eg, 1.01 eV: 57%) are AgBiS 2 (Eg, 0.9 eV: 56%), Cu 2 SnS 3 (Eg, 0.91 eV: 57%), PbSnS 3 (Eg, 1.05 eV: 57%), PbSbS 4 (Eg, 1.13 eV: 56%).


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