The role of third cation doping on phase stability, carrier transport and carrier suppression in amorphous oxide semiconductors

2020 ◽  
Vol 8 (39) ◽  
pp. 13798-13810
Author(s):  
Austin Reed ◽  
Chandon Stone ◽  
Kwangdong Roh ◽  
Han Wook Song ◽  
Xingyu Wang ◽  
...  
Keyword(s):  
Phase Stability ◽  
High Performance ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Oxide Semiconductors ◽  
Amorphous Oxide ◽  
Cation Doping ◽  
High Carrier Mobility ◽  
High Carrier

Amorphous InAlZnO demonstrates greater phase stability and carrier suppression capability while maintaining a high carrier mobility for high performance TFTs.

scholarly journals Coulomb drag transistor using a graphene and MoS2 heterostructure

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Youngjo Jin ◽  
Min-Kyu Joo ◽  
Byoung Hee Moon ◽  
Hyun Kim ◽  
Sanghyup Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Passive Layer ◽  
Strong Interactions ◽  
Practical Application ◽  
Coulomb Drag ◽  
Strong Coulomb ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Two-dimensional (2D) heterostructures often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, a double-layer graphene (Gr) separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag carriers in the passive layer. Here, we propose high-performance Gr/MoS2 heterostructure transistors operating via Coulomb drag, exhibiting a high carrier mobility (∼3700 cm2 V−1 s−1) and on/off-current ratio (∼108) at room temperature. The van der Waals gap at the Gr/MoS2 interface induces strong interactions between the interlayer carriers, whose recombination is suppressed by the Schottky barrier between p-Gr and n-MoS2, clearly distinct from the presence of insulating layers. The sign reversal of lateral voltage clearly demonstrates the Coulomb drag in carrier transport. Hole-like behavior of electrons in the n-MoS2 is observed in magnetic field, indicating strong Coulomb drag at low temperature. Our Coulomb drag transistor thus provides a shortcut for the practical application of 2D heterostructures.

High-performance monolayer Na3Sb shrinking transistors: a DFT-NEGF study

Nanoscale ◽  
2020 ◽  
Vol 12 (36) ◽  
pp. 18931-18937
Author(s):  
Wenhan Zhou ◽  
Shengli Zhang ◽  
Shiying Guo ◽  
Hengze Qu ◽  
Bo Cai ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
2D Materials ◽  
Optoelectronic Devices ◽  
Next Generation ◽  
High Carrier Mobility ◽  
High Carrier

2D materials with direct bandgaps and high carrier mobility are considered excellent candidates for next-generation electronic and optoelectronic devices.

Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface

2007 ◽  
Vol 54 (6) ◽  
pp. 1438-1445 ◽  
Author(s):  
Akinobu Teramoto ◽  
Tatsufumi Hamada ◽  
Masashi Yamamoto ◽  
Philippe Gaubert ◽  
Hiroshi Akahori ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Very High

scholarly journals High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment

2018 ◽  
Vol 4 (9) ◽  
pp. eaat5780 ◽  
Author(s):  
Xiaoxue Wang ◽  
Xu Zhang ◽  
Lei Sun ◽  
Dongwook Lee ◽  
Sunghwan Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Radio Frequency Identification ◽  
Acid Treatment ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Great Promise ◽  
High Electrical Conductivity ◽  
High Carrier Mobility ◽  
High Carrier

Air-stable, lightweight, and electrically conductive polymers are highly desired as the electrodes for next-generation electronic devices. However, the low electrical conductivity and low carrier mobility of polymers are the key bottlenecks that limit their adoption. We demonstrate that the key to addressing these limitations is to molecularly engineer the crystallization and morphology of polymers. We use oxidative chemical vapor deposition (oCVD) and hydrobromic acid treatment as an effective tool to achieve such engineering for conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT). We demonstrate PEDOT thin films with a record-high electrical conductivity of 6259 S/cm and a remarkably high carrier mobility of 18.45 cm2V−1s−1by inducing a crystallite-configuration transition using oCVD. Subsequent theoretical modeling reveals a metallic nature and an effective reduction of the carrier transport energy barrier between crystallized domains in these thin films. To validate this metallic nature, we successfully fabricate PEDOT-Si Schottky diode arrays operating at 13.56 MHz for radio frequency identification (RFID) readers, demonstrating wafer-scale fabrication compatible with conventional complementary metal-oxide semiconductor (CMOS) technology. The oCVD PEDOT thin films with ultrahigh electrical conductivity and high carrier mobility show great promise for novel high-speed organic electronics with low energy consumption and better charge carrier transport.

scholarly journals Silicon Meet Graphene for a New Family of Near-Infrared Schottky Photodetectors

2019 ◽  
Author(s):  
Maurizio Casalino
Keyword(s):  
Carrier Mobility ◽  
Near Infrared ◽  
Strong Light ◽  
Broadband Absorption ◽  
New Family ◽  
High Carrier Mobility ◽  
Light Matter Interaction ◽  
High Carrier ◽  
Schottky Junctions

In recent years graphene has attracted much interest due to its unique properties of flexibility, strong light-matter interaction, high carrier mobility and broadband absorption. In addition, graphene can be deposited on many substrates including silicon with which is able to form Schottky junctions opening the path to the realization of near-infrared silicon photodetectors based on the internal photoemission effect where graphene play the role of the metal. In this work, we review the very recent progress of the near-infrared photodetectors based on Schottky junctions involving graphene. This new family of device promises to overcome the limitations of the Schottky photodetectors based on metals showing the potentialities to compare favorably with germanium photodetectors currently employed in silicon photonics.

Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors

2015 ◽  
Vol 3 (41) ◽  
pp. 10892-10897 ◽  
Author(s):  
Ji Zhang ◽  
Kai Zhang ◽  
Weifeng Zhang ◽  
Zupan Mao ◽  
Man Shing Wong ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Side Chains ◽  
Organic Field Effect Transistors ◽  
High Carrier Mobility ◽  
High Carrier

Angular-shaped benzodithieno[3,2-b]thiophene (BDTT) derivatives with two alkoxy side-chains were synthesized, and an OFET device based on BDTT-4 exhibited a high carrier mobility of up to 2.6 cm2V−1s−1.

scholarly journals High-Performance Photodetectors Based on Nanostructured Perovskites

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 1038
Author(s):  
Chunlong Li ◽  
Jie Li ◽  
Zhengping Li ◽  
Huayong Zhang ◽  
Yangyang Dang ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
Carrier Lifetime ◽  
Imaging Spectroscopy ◽  
Fast Response ◽  
Fiber Optic Communications ◽  
Control Chemical ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Device Miniaturization

In recent years, high-performance photodetectors have attracted wide attention because of their important applications including imaging, spectroscopy, fiber-optic communications, remote control, chemical/biological sensing and so on. Nanostructured perovskites are extremely suitable for detective applications with their long carrier lifetime, high carrier mobility, facile synthesis, and beneficial to device miniaturization. Because the structure of the device and the dimension of nanostructured perovskite have a profound impact on the performance of photodetector, we divide nanostructured perovskite into 2D, 1D, and 0D, and review their applications in photodetector (including photoconductor, phototransistor, and photodiode), respectively. The devices exhibit high performance with high photoresponsivity, large external quantum efficiency (EQE), large gain, high detectivity, and fast response time. The intriguing properties suggest that nanostructured perovskites have a great potential in photodetection.

scholarly journals Conductive Metallophthalocyanine Framework Films with High Carrier Mobility as Efficient Chemiresistors

2021 ◽  
Author(s):  
Hong-Cai Zhou ◽  
Yan Yue ◽  
Peiyu Cai ◽  
Xiaoyi Xu ◽  
Hanying Li ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
High Carrier Mobility ◽  
High Carrier
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