Improve Persistent Luminescence in Pressure-tuned CsPbBr3 Nanocrystals by Ce3+ Doping

2021 ◽  
Author(s):  
Bao Liu ◽  
Meng Tian ◽  
Yang Gao ◽  
Pengyu Zhou ◽  
Kailin Chi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Steady State ◽  
Photoluminescence Spectroscopy ◽  
Persistent Luminescence ◽  
Time Resolved ◽  
Novel Strategy ◽  
Time Resolved Photoluminescence ◽  
Kinetics Of

The pressure-dependent photoluminescence kinetics of CsPbBr3:Ce quantum dots was investigated by steady-state and time-resolved photoluminescence spectroscopy. Here, we propose a novel strategy to improve the persistent luminescence of CsPbBr3 quantum...

Steady state and time resolved photoluminescence properties of CuInS2/ZnS quantum dots in solutions and in solid films

2015 ◽  
Vol 167 ◽  
pp. 333-338 ◽  
Author(s):  
Nikolaos Droseros ◽  
Kostas Seintis ◽  
Mihalis Fakis ◽  
Spiros Gardelis ◽  
Androula G. Nassiopoulou
Keyword(s):  
Quantum Dots ◽  
Steady State ◽  
Photoluminescence Properties ◽  
Time Resolved ◽  
Solid Films ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

2010 ◽  
Vol 96 (1) ◽  
pp. 011901 ◽  
Author(s):  
M. Syperek ◽  
P. Leszczyński ◽  
J. Misiewicz ◽  
E. M. Pavelescu ◽  
C. Gilfert ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Photoluminescence Spectroscopy ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Tunnel Injection

scholarly journals Time-Resolved Spectroscopy of InGaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 803-809
Author(s):  
Milan Pophristic ◽  
Frederick H. Long ◽  
Chuong Tran ◽  
Ian T. Ferguson
Keyword(s):  
Quantum Dots ◽  
Time Scale ◽  
Room Temperature ◽  
Average Distance ◽  
Time Resolved ◽  
Light Emitting ◽  
Potential Fluctuations ◽  
Stretched Exponential ◽  
Time Resolved Photoluminescence ◽  
Kinetics Of

We have used time-resolved photoluminescence (PL), with 400 nm (3.1 eV) excitation, to examine InxGa1−xN/GaN light-emitting diodes (LEDs) before the final stages of processing at room temperature. We have found dramatic differences in the time-resolved kinetics between dim, bright and super bright LED devices. The lifetime of the emission for dim LEDs is quite short, 110 ± 20 ps at photoluminescence (PL) maximum, and the kinetics are not dependent upon wavelength. This lifetime is short compared to bright and super bright LEDs, which we have examined under similar conditions. The kinetics of bright and super bright LEDs are clearly wavelength dependent, highly non-exponential, and are on the nanosecond time scale (lifetimes are in order of 1 ns for bright and 10 ns for super bright LED at the PL max). The non-exponential PL kinetics can be described by a stretched exponential function, indicating significant disorder in the material. Typical values for β, the stretching coefficient, are 0.45 − 0.6 for bright LEDs, at the PL maxima at room temperature. We attribute this disorder to indium alloy fluctuations.From analysis of the stretched exponential kinetics we estimate the potential fluctuations to be approximately 75 meV in the super bright LED. Assuming a hopping mechanism, the average distance between indium quantum dots in the super bright LED is estimated to be 20 Å.

scholarly journals Studies of Photoredox Reactions on Nanosize Semiconductors

1996 ◽  
Vol 452 ◽  
Author(s):  
Jess P. Wilcoxon ◽  
F. Parsapour ◽  
D. F. Kelley
Keyword(s):  
Electron Transfer ◽  
Band Gap ◽  
Electron Acceptor ◽  
Covalent Bonding ◽  
Electron Acceptors ◽  
Photoluminescence Spectroscopy ◽  
Time Resolved ◽  
Organic Electron ◽  
Time Resolved Photoluminescence ◽  
Kinetics Of

AbstractLight induced electron transfer (ET) from nanosize semiconductors of MoS2 to organic electron acceptors such as 2,2′-bipyridine (bpy) and methyl substituted 4,4′,5,5′-tetramethyl-2,2′-bipyridine (tmb) was studied by static and time resolved photoluminescence spectroscopy. The kinetics of ET were varied by changing the nanocluster size (the band gap), the electron acceptor, and the polarity of the solvent. MoS2is an especially interesting semiconductor material as it is an indirect semiconductor in bulk form, and has a layered covalent bonding arrangement which is highly resistant to photocorrosion.

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