scholarly journals Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorber

2022 ◽  
Author(s):  
Elias Zsolt Stutz ◽  
Mahdi Zamani ◽  
Djamshid Damry ◽  
Lea Buswell ◽  
Rajrupa Paul ◽  
...  

Zinc phosphide, Zn3P2, is a semiconductor with a high absorption coefficient in the spectral range relevant for single junction photovoltaic applications. It is made of elements abundant in the Earth’s...

2013 ◽  
Vol 3 (2) ◽  
Author(s):  
Mohammad Bhuiyan ◽  
Abdus Bhuiyan ◽  
Ahmad Hossain ◽  
Zahid Mahmood

AbstractCuInSe2 is considered as a striking semiconductor for second generation solar cells. An investigation of optical properties of CuInSe2 thin films is essential to evaluate its perfectibility as high efficiency solar cells. The films were fabricated by thermal co-evaporation technique. For this experiment, a shimadzu spectrophotometer of model number 1201 is used. The optical properties of these films are determined for the wavelength range 350 nm–1100 nm. From the experiment it is evident that the reflectance and transmittance of the films are negligible in comparison to the absorption of these films. The high absorption coefficient of the order of 104/cm of the film material also supports this. The band gap of the CuInSe2 films was evaluated to be 1.1 eV. From XRD and EDAX analysis it is evident that CuInSe2 films are polycrystalline in nature having ideal stoichiometric composition.


2014 ◽  
Vol 38 (1) ◽  
pp. 93-96
Author(s):  
E Hoq ◽  
MRA Bhuiyan ◽  
J Begum

Sb doped ZnO thin films having various thicknesses have been prepared onto glass substrate by using thermal evaporation method. The atomic compositions of the grown films have been determined by Energy Dispersive Analysis of X-ray (EDAX) method. The optical properties were measured by using a UV-VIS-NIR spectrophotometer (300 to 2500 nm). The EDAX analysis revealed that Sb is doped into the ZnO films. Optical properties showed high absorption coefficient (~105/cm) that direct allowed transition band gap. The optical band gap of the ZnO thin films became reduced due to the doping of Sb. DOI: http://dx.doi.org/10.3329/jbas.v38i1.20217 Journal of Bangladesh Academy of Sciences, Vol. 38, No. 1, 93-96, 2014


Author(s):  
Panagiota Koralli ◽  
Spyridon Tsikalakis ◽  
Maria Goulielmaki ◽  
Stella Arelaki ◽  
Janina Müller ◽  
...  

Conjugated polymer nanoparticles (CPNs) have emerged as a new promising class of cancer theranostic agents due to their desirable optical features, such as high absorption coefficient and photoluminescence quantum yields,...


2021 ◽  
Author(s):  
Qidong Kang ◽  
Fei Yang ◽  
Xinyu Zhang ◽  
Ziyu Hu

Since lead has a very high absorption coefficient μ, that the radiations from within the bulk material do not penetrate the layers. While, the oxygen and water (O2 and H2O)...


Author(s):  
Chen Qian ◽  
Jianjun Li ◽  
Kaiwen Sun ◽  
Chenhui Jiang ◽  
Jialiang Huang ◽  
...  

Antimony selenosulfide, Sb2(S,Se)3, has emerged as a promising light-harvesting material for its high absorption coefficient, suitable bandgap, low-toxic and low-cost constituents. However, the poor stability and high cost of widely...


2018 ◽  
Vol 26 (10) ◽  
pp. 249-256
Author(s):  
Waleed Khalid Kadhim

In this paper I present the preparation of (Sb2o3) thin films using thermal evaporation in vacuum, procedure with different thickness  (100 ,150 ,200 ,and 250) nm, by using ( hot plate) from Molybdenum matter at temperature in ( 9000c) and the period of time (15mint) ,the prepared in a manner thermal evaporation in a vacuum and precipitated on glass bases, pure Antimony Trioxide (sb2o3 ) thin films with various condition have been successfully deposited by (T.E.V) on glass slide substrates. The substrates temperature of about 100oC and the vacuum of about 10-6 torr, to investigated oxidation of evaporated, measure spectra for prepared films in arrange of wavelength (250 – 1100 nm). The following optical properties have been calculated: the absorption coefficient, the forbidden (Eg) for direct and indirect transitions "absorbance, refractive index,  extinction coefficient, real and imaginary parts" of the dielectric constant.


Author(s):  
J. Damisa ◽  
J. O. Emegha ◽  
I. L. Ikhioya

Lead tin sulphide (Pb-Sn-S) thin films (TFs) were deposited on fluorine-doped tin oxide (FTO) substrates via the electrochemical deposition process using lead (II) nitrate [Pb(NO3)2], tin (II) chloride dehydrate [SnCl2.2H2O] and thiacetamide [C2H5NS] precursors as sources of lead (Pb), tin (Sn) and sulphur (S). The solution of all the compounds was harmonized with a stirrer (magnetic) at 300k. In this study, we reported on the improvements in the properties (structural and optical) of Pb-Sn-S TFs by varying the deposition time. We observed from X-ray diffractometer (XRD) that the prepared material is polycrystalline in nature. UV-Vis measurements were done for the optical characterizations and the band gap values were seen to be increasing from 1.52 to 1.54 eV with deposition time. In addition to this, the absorption coefficient and refractive index were also estimated and discussed.


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