Robust Dirac spin gapless semiconductors in a two-dimensional oxalate based organic Honeycomb-Kagome lattice

Nanoscale ◽  
2022 ◽  
Author(s):  
Jianpei Xing ◽  
Xue Jiang ◽  
Zhifeng Liu ◽  
Yan Qi ◽  
Jijun Zhao
Keyword(s):  
Ab Initio Calculations ◽  
Ab Initio ◽  
Ferromagnetic Materials ◽  
Two Dimensional ◽  
Dirac Cone ◽  
Spintronic Devices ◽  
Kagomé Lattice ◽  
Spin Polarized ◽  
Spin Gapless Semiconductors ◽  
Dirac Spin

Two-dimensional (2D) ferromagnetic materials with intrinsic and robust spin-polarized Dirac cone are of great interest to explore exciting physics and to realize spintronic devices. Using comprehensive ab initio calculations, herein...

scholarly journals Manipulation of hot carrier cooling dynamics in two-dimensional Dion–Jacobson hybrid perovskites via Rashba band splitting

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jun Yin ◽  
Rounak Naphade ◽  
Partha Maity ◽  
Luis Gutiérrez-Arzaluz ◽  
Dhaifallah Almalawi ◽  
...  
Keyword(s):  
Transient Absorption ◽  
Phonon Scattering ◽  
Transient Absorption Spectroscopy ◽  
Band Model ◽  
Two Dimensional ◽  
Spintronic Devices ◽  
Hot Carrier ◽  
Band Splitting ◽  
Perovskite Materials ◽  
Spin Polarized

AbstractHot-carrier cooling processes of perovskite materials are typically described by a single parabolic band model that includes the effects of carrier-phonon scattering, hot phonon bottleneck, and Auger heating. However, little is known (if anything) about the cooling processes in which the spin-degenerate parabolic band splits into two spin-polarized bands, i.e., the Rashba band splitting effect. Here, we investigated the hot-carrier cooling processes for two slightly different compositions of two-dimensional Dion–Jacobson hybrid perovskites, namely, (3AMP)PbI4 and (4AMP)PbI4 (3AMP = 3-(aminomethyl)piperidinium; 4AMP = 4-(aminomethyl)piperidinium), using a combination of ultrafast transient absorption spectroscopy and first-principles calculations. In (4AMP)PbI4, upon Rashba band splitting, the spin-dependent scattering of hot electrons is responsible for accelerating hot-carrier cooling at longer delays. Importantly, the hot-carrier cooling of (4AMP)PbI4 can be extended by manipulating the spin state of the hot carriers. Our findings suggest a new approach for prolonging hot-carrier cooling in hybrid perovskites, which is conducive to further improving the performance of hot-carrier-based optoelectronic and spintronic devices.

Two-dimensional transition-metal halide CoBr3 with spin-polarized Dirac cone

2019 ◽  
Vol 21 (32) ◽  
pp. 17740-17745 ◽  
Author(s):  
Wei-xi Zhang ◽  
Yong Li ◽  
Hui Jin ◽  
Yan-chao She
Keyword(s):  
Transition Metal ◽  
Electronic Properties ◽  
Metal Halide ◽  
Two Dimensional ◽  
Dirac Cone ◽  
Spin Polarized ◽  
Metal Materials

Recently, the discovery of two-dimensional transition-metal materials with non-trivial magnetic and electronic properties has spurred huge interest in investigating their applications in nanotechnology.

scholarly journals Ab Initio Calculations of Ultrashort Carrier Dynamics in Two-Dimensional Materials: Valley Depolarization in Single-Layer WSe2

Nano Letters ◽  
2017 ◽  
Vol 17 (8) ◽  
pp. 4549-4555 ◽  
Author(s):  
Alejandro Molina-Sánchez ◽  
Davide Sangalli ◽  
Ludger Wirtz ◽  
Andrea Marini
Keyword(s):  
Ab Initio Calculations ◽  
Ab Initio ◽  
Single Layer ◽  
Carrier Dynamics ◽  
Two Dimensional ◽  
Two Dimensional Materials

Two-dimensional Dirac spin-gapless semiconductors with tunable perpendicular magnetic anisotropy and a robust quantum anomalous Hall effect

2020 ◽  
Vol 7 (8) ◽  
pp. 2071-2077 ◽  
Author(s):  
Qilong Sun ◽  
Yandong Ma ◽  
Nicholas Kioussis
Keyword(s):  
Magnetic Anisotropy ◽  
Low Power ◽  
Hall Effect ◽  
Perpendicular Magnetic Anisotropy ◽  
Anomalous Hall Effect ◽  
Two Dimensional ◽  
Power Switching ◽  
Quantum Anomalous Hall Effect ◽  
Spin Gapless Semiconductors ◽  
Dirac Spin

A 2D ferromagnetic Fe2I2 layer with a robust QAH effect towards the low-power switching of PMA in multiferroic Fe2I2/BaTiO3 bilayers.

ELECTRONIC STRUCTURE OF GRAPHENE AND GERMANENE BASED ON DOUBLE HEXAGONAL STRUCTURE

2013 ◽  
Vol 27 (29) ◽  
pp. 1350212 ◽  
Author(s):  
S. NAJI ◽  
A. BELHAJ ◽  
H. LABRIM ◽  
A. BENYOUSSEF ◽  
A. EL KENZ
Keyword(s):  
Electronic Structure ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Hexagonal Structure ◽  
Lattice Parameters ◽  
Two Dimensional ◽  
Atomic Configuration ◽  
Hexagonal Cell ◽  
Exceptional Lie Algebra ◽  
Principal Unit

In this paper, we study the electronic structure of monolayer materials based on a double hexagonal geometry with (1×1) and [Formula: see text] superstructures. Inspired from the two-dimensional root system of an exceptional Lie algebra called G2, this hexagonal atomic configuration involves two hexagons of unequal side length at angle 30°. The principal unit hexagonal cell contains twelve atoms instead of the usual configuration involving only six ones relying only on the (1×1) superstructure. Using ab initio calculations based on FPLO9.00-34 code, we investigate numerically the graphene and the germanene with the double hexagonal geometry. In particular, we find that the usual electronic properties and the lattice parameters of such materials are modified. More precisely, the lattice parameters are increased. It has been shown that, in the single hexagonal geometry, the grapheme and the germanene behave as a gapless semiconductor and a semi-metallic, respectively. In double hexagonal geometry however, both materials becomes metallic.

scholarly journals Phonon transport properties of two-dimensional group-IV materials from ab initio calculations

2016 ◽  
Vol 94 (24) ◽  
Author(s):  
Bo Peng ◽  
Hao Zhang ◽  
Hezhu Shao ◽  
Yuanfeng Xu ◽  
Gang Ni ◽  
...  
Keyword(s):  
Ab Initio Calculations ◽  
Ab Initio ◽  
Transport Properties ◽  
Phonon Transport ◽  
Group Iv ◽  
Two Dimensional ◽  
Dimensional Group

scholarly journals Dirac spin-gapless semiconductors: promising platforms for massless and dissipationless spintronics and new (quantum) anomalous spin Hall effects

2016 ◽  
Vol 4 (2) ◽  
pp. 252-257 ◽  
Author(s):  
Xiao-Lin Wang
Keyword(s):  
Parabolic Type ◽  
Ultra Low Power ◽  
Spintronic Devices ◽  
Hall Effects ◽  
Sample Edge ◽  
Hall Effect Measurements ◽  
New Generation ◽  
Spin Hall Effects ◽  
Spin Gapless Semiconductors ◽  
Dirac Spin

Abstract It is proposed that the new generation of spintronics should be ideally massless and dissipationless for the realization of ultra-fast and ultra-low-power spintronic devices. We demonstrate that the spin-gapless materials with linear energy dispersion are unique materials that can realize these massless and dissipationless states. Furthermore, we propose four new types of spin Hall effects that consist of spin accumulation of equal numbers of electrons and holes having the same or opposite spin polarization at the sample edge in Hall effect measurements, but with vanishing Hall voltage. These new Hall effects can be classified as (quantum) anomalous spin Hall effects. The physics for massless and dissipationless spintronics and the new spin Hall effects are presented for spin-gapless semiconductors with either linear or parabolic dispersion. New possible candidates for Dirac-type or parabolic-type spin-gapless semiconductors are proposed in ferromagnetic monolayers of simple oxides with either honeycomb or square lattices.

Time-reversal-breaking Weyl nodal lines in two-dimensional A3C2 (A = Ti, Zr, Hf) intrinsically ferromagnetic materials with high Curie temperature

Nanoscale ◽  
2021 ◽  
Author(s):  
Feng Zhou ◽  
Ying Liu ◽  
Minquan KUANG ◽  
Peng Wang ◽  
Jianhua WANG ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Time Reversal ◽  
Three Dimensional ◽  
Ferromagnetic Materials ◽  
High Curie Temperature ◽  
Two Dimensional ◽  
Nodal Lines ◽  
Spin Polarized

Most materials that feature nontrivial topological band topology are spin-degenerate and three dimensional, strongly restricting them from application in spintronic nanodevices. Hence, two-dimensional (2D) intrinsically spin-polarized systems with rich topological...

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