A comparative study of thin coatings of Au/Pd, Pt and Cr produced by magnetron sputtering for FE‐SEM

1998 ◽  
Vol 189 (1) ◽  
pp. 79-89 ◽  
Author(s):  
Stokroos ◽  
Kalicharan ◽  
Van Der Want ◽  
Jongebloed
2017 ◽  
Vol 643 ◽  
pp. 53-59 ◽  
Author(s):  
B. Giroire ◽  
M. Ali Ahmad ◽  
G. Aubert ◽  
L. Teule-Gay ◽  
D. Michau ◽  
...  

2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.


2018 ◽  
Vol 44 (7) ◽  
pp. 7637-7646 ◽  
Author(s):  
Ph.V. Kiryukhantsev-Korneev ◽  
A.N. Sheveyko ◽  
N.V. Shvindina ◽  
E.A. Levashov ◽  
D.V. Shtansky

Vacuum ◽  
2017 ◽  
Vol 143 ◽  
pp. 479-485 ◽  
Author(s):  
D.V. Sidelev ◽  
G.A. Bleykher ◽  
M. Bestetti ◽  
V.P. Krivobokov ◽  
A. Vicenzo ◽  
...  

1995 ◽  
Vol 396 ◽  
Author(s):  
V. Rigato ◽  
G. Maggioni ◽  
D. Boscarino ◽  
G. Della Mea

AbstractThin films (100–400 nm) of lead silicate glass have been deposited by RF magnetron sputtering in Ar plasma at different discharge conditions. The interaction of the sputtered species with the gas atoms during the transport process through the discharge region and the kinetics of growth of the films have been investigated as a function of the target composition and of the substrate temperature. This study demonstrates the possibility of controlling the surface electrical resistance of the films in a wide range of values ranging from 1012 to 1017 during the film growth.


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