Robust and universal constant-gm circuit technique

2002 ◽  
Vol 38 (9) ◽  
pp. 396 ◽  
Author(s):  
J.F. Duque-Carrillo ◽  
J.M. Carrillo ◽  
J.L. Ausı́N ◽  
E. Sánchez-Sinencio
Keyword(s):  
Universal Constant ◽  
Circuit Technique

A Low Power Low-Pass Fourth-Order Filter for WiMAX/LTE Receiver in CMOS 45nm Technology

2016 ◽  
Vol 26 (03) ◽  
pp. 1750048 ◽  
Author(s):  
Vida Orduee Niar ◽  
Gholamreza Zare Fatin
Keyword(s):  
Low Power ◽  
Fourth Order ◽  
Supply Voltage ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Power Filter ◽  
Order Filter ◽  
Source Follower ◽  
Low Pass ◽  
Circuit Technique

In this paper, a [Formula: see text]-[Formula: see text] low-pass and low power filter with tunable in-band attenuation for WiMAX/LTE receiver is presented. The fourth-order filter consists of two cascaded biquad stages. The source-follower (SF) stage is used as a key building block in these biquads. In this paper, we have presented a circuit technique to reduce the nonlinearity of the SF stage resulting from unmatched signal swings at the gate and source terminals of the input transistor. The proposed SF stage, is used for design of a linear biquad which is then utilized in a fourth-order Butterworth low-pass filter. The simulation results of the filter for bandwidth of 10 MHz show that the IIP3 of the filter is equal to 8.22[Formula: see text]dBm, in-band noise density is 100[Formula: see text]nV/[Formula: see text]Hz and power consumption is 5.9[Formula: see text]mW. The supply voltage of the filter is equal to 1[Formula: see text]V.

A universal constant in temporal segmentation of human speech

1992 ◽  
Vol 79 (10) ◽  
pp. 479-480 ◽  
Author(s):  
M. Vollrath ◽  
J. Kazenwadel ◽  
H.-P. Kr�ger
Keyword(s):  
Universal Constant ◽  
Temporal Segmentation ◽  
Human Speech

A true single-phase-clock dynamic CMOS circuit technique

1987 ◽  
Vol 22 (5) ◽  
pp. 899-901 ◽  
Author(s):  
Y. Ji-Ren ◽  
I. Karlsson ◽  
C. Svensson
Keyword(s):  
Single Phase ◽  
Cmos Circuit ◽  
Phase Clock ◽  
Circuit Technique

The Effect of Froude Number on Entrainment in Two-Dimensional Line Plumes

1981 ◽  
Vol 103 (3) ◽  
pp. 471-477 ◽  
Author(s):  
W. F. Phillips
Keyword(s):  
Froude Number ◽  
Large Distance ◽  
Universal Constant ◽  
Temperature Profiles ◽  
Two Dimensional ◽  
Development Length ◽  
High Discharge ◽  
Entrainment Coefficient ◽  
Theoretical Results

Theoretical results are presented which predict the entrainment coefficient in a forced plume as a function of the local Froude number. The model does not require any external specification of the velocity and temperature profiles. The Froude number for any plume, in a motionless isothermal ambient, approaches a universal constant, at a large distance above the source. However, it is shown here that the development length for the Froude number, in plumes with high discharge Froude number, is of the order of a few hundred times the discharge width.

scholarly journals Low degree connectivity of ad-hoc networks via percolation

2010 ◽  
Vol 42 (02) ◽  
pp. 559-576
Author(s):  
Emilio De Santis ◽  
Fabrizio Grandoni ◽  
Alessandro Panconesi
Keyword(s):  
Ad Hoc Networks ◽  
Maximum Degree ◽  
High Probability ◽  
Ad Hoc ◽  
Classical Problem ◽  
Universal Constant ◽  
Giant Component ◽  
Second Phase ◽  
Connected Network ◽  
Hoc Networks

Consider the following classical problem in ad-hoc networks. Suppose that n devices are distributed uniformly at random in a given region. Each device is allowed to choose its own transmission radius, and two devices can communicate if and only if they are within the transmission radius of each other. The aim is to (quickly) establish a connected network of low average and maximum degree. In this paper we present the first efficient distributed protocols that, in poly-logarithmically many rounds and with high probability, set up a connected network with O(1) average degree and O(log n) maximum degree. Our algorithms are based on the following result, which is a nontrivial consequence of classical percolation theory. Suppose that each device sets up its transmission radius in order to reach the K closest devices. There exists a universal constant K (independent of n) such that, with high probability, there will be a unique giant component (i.e. a connected component of size Θ(n)). Furthermore, all remaining components will be of size O(log2 n). This leads to an efficient distributed probabilistic test for membership in the giant component, which can be used in a second phase to achieve full connectivity.

scholarly journals The Formation of Sulfide Scales on Carbon Steel in Saturated H2S

2020 ◽  
Author(s):  
Noora Alqahtani ◽  
Jiahui Qi ◽  
Aboubakr M. Abdullah ◽  
Nicholas J. Laycock ◽  
Mary P. Ryan
Keyword(s):  
Carbon Steel ◽  
Corrosion Product ◽  
Film Formation ◽  
Open Circuit ◽  
Iron Surface ◽  
Ion Concentration ◽  
Bulk Solution ◽  
Formation Mechanisms ◽  
Structure Thickness ◽  
Circuit Technique

There are three contributing elements of corrosion of Carbon Steel in H₂ S environment: the effect of H2S on water chemistry; electrochemical reactions of the bare iron surface (both anodic and cathodic processes); and the formation and growth of corrosion product layers. The electrochemical reaction commonly contains three stages: first, the reactant transported from the solution (bulk) to the metal surface; then the transfer of the charge reaction on the surface, followed by the reaction product transported away from the iron surface to the bulk solution or the formation and development of the corrosion product which then can decrease the corrosion rate. Development of a robust corrosion model to predict the corrosion process in H2S requires a mechanistic understanding of all these elements. An experimental study was carried out to assess the corrosion of C-steel under open-circuit technique conditions and in solutions at several ranges of time and temperatures. The effect of film composition, morphology, structure, thickness, and ion- concentration of corrosion product films formed on pipeline Carbon Steel in an acid sour solution were examined. The electrochemical behavior of the filmed steel was measured, and the film properties assessed using a range of advanced techniques including Scanning Electron Microscopy (SEM), and Raman spectroscopy (RS). The data will be discussed in terms of film formation mechanisms.

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