Comparison of nano-scale complementary metal-oxide semiconductor and 3T–4T double gate fin-shaped field-effect transistors for robust and energy-efficient subthreshold logic
2010 ◽
Vol 4
(6)
◽
pp. 548
◽
2009 ◽
Vol 48
(4)
◽
pp. 04C051
◽
2009 ◽
Vol 96
(10)
◽
pp. 1023-1038
2002 ◽
Vol 41
(Part 2, No. 10A)
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pp. L1096-L1098
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2001 ◽
pp. 1343-1350
1993 ◽
Vol 32
(Part 1, No. 11A)
◽
pp. 4916-4922
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2011 ◽
Vol 50
(4S)
◽
pp. 04DC14
◽