Gate dielectric material dependence of current‐voltage characteristics of ballistic Schottky barrier graphene nanoribbon field‐effect transistor and carbon nanotube field‐effect transistor for different channel lengths
2009 ◽
Vol 187
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pp. 012049
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2000 ◽
Vol 24
(6)
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pp. 407-412
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2009 ◽
Vol 12
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pp. 5-12
2012 ◽
Vol 15
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pp. 5-16
2013 ◽
Vol 16
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pp. 5-12