Improved MOCVD Growth of GaAs on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
R.M. Lum ◽  
J.K. Klingert ◽  
B.A. Davidson ◽  
M.G. Lamont
Keyword(s):  
Buffer Layer ◽  
Rutherford Backscattering Spectrometry ◽  
Growth Parameters ◽  
Buffer Layers ◽  
Double Crystal ◽  
Gaas On Si ◽  
Mocvd Growth ◽  
Gaas Films ◽  
Gaas Buffer Layer ◽  
Direct Growth

ABSTRACTIn the direct growth of GaAs on Si by MOCVD the overall quality of the heteroepitaxial film is controlled to a large extent by the growth parameters of the initial GaAs buffer layer. We have investigated the structural properties of this layer using Rutherford Backscattering Spectrometry (RBS) and X-ray double crystal diffractometry. The crystallinity of the buffer layer was observed to improve with increasing layer thickness in the range 10–100nm, and then to rapidly degrade for thicker layers. High temperature (750°C) annealing of the buffer layers resulted in considerable reordering of all but the thicker (>200 nm) layers. Alteration of the usual GaAs/Si growth sequence to include an in-situ anneal of the buffer layer after growth interruption yielded GaAs films with improved structural, optical and electrical properties.

MOCVD growth of GaAs on Si using (Al,In) GaAs/GaAs buffer layer

1991 ◽  
Vol 107 (1-4) ◽  
pp. 473-478 ◽  
Author(s):  
K. Fujita ◽  
Y. Shiba ◽  
K. Asai
Keyword(s):  
Buffer Layer ◽  
Gaas On Si ◽  
Mocvd Growth ◽  
Gaas Buffer Layer

scholarly journals Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD

2003 ◽  
Vol 26 (2) ◽  
pp. 71-79 ◽  
Author(s):  
K. F. Yarn ◽  
W. C. Chien ◽  
C. L. Lin ◽  
C. I. Liao
Keyword(s):  
Buffer Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Buffer Layers ◽  
Double Crystal ◽  
Group V ◽  
Group Iii ◽  
Metamorphic Buffer ◽  
Gaas Substrates ◽  
Temperature Group ◽  
Direct Growth

In this report, we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented GaAs (1 0 0) substrates with 10 degree towards (1 1 1)A. The grown films are characterized by optical microscopy, atomic force microscopy, secondary ion mass spectrometry, transmission electron microscopy and double-crystal X-ray diffraction. We also analyze the surface morphology, which is dependent on growth temperature, group III and group V partial pressure, growth rate and V/III ratios. A mirror-like, uniform surface and high crystal quality of the metamorphic buffer layer directly grown on a GaAs substrate can be achieved. Finally, to investigate the performance of the metamorphic microwave devices, we also fabricate the InAlAs/InGaAs metamorphic HEMT on GaAs substrates.

Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures

2020 ◽  
Vol 90 (2) ◽  
pp. 20301
Author(s):  
Ilkay Demir ◽  
Ahmet Emre Kasapoğlu ◽  
Hasan Feyzi Budak ◽  
Emre Gür ◽  
Sezai Elagoz
Keyword(s):  
Buffer Layer ◽  
Growth Parameters ◽  
Internal Quantum Efficiency ◽  
Optical Quality ◽  
Structural Quality ◽  
Atomic Step ◽  
Organic Vapor ◽  
Gaas Buffer Layer ◽  
Metal Organic ◽  
Low Temperature Gaas

We investigate influence of GaAs buffer layer (BL) growth parameters such as temperature and thickness on the structural, morphological, crystalline and optical quality of metal organic vapor phase epitaxy (MOVPE) grown heterostructures of GaAs on Ge. It was found that the optimal BL conditions significantly decrease the effects of anti-phase boundaries (APBs) even when grown on offcut Ge substrate by two-step growth technique with AsH3 pre-flow to promote double atomic step formation. It is observed that as the growth temperature increases, the growth rate of the GaAs BL increases, too. Improvement on the structural quality is observed up to BLs temperature of 535 °C, then it decreases. On the other hand, as the different thick BLs, 12, 25, 75 nm are considered, the epilayer grown on the 25 nm thick BL has shown the lowest full width at half maximum (FWHM) value, large photoluminescence peak intensity and internal quantum efficiency (IQE).

Strain in Epitaxial GaAs on CaF2/Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
L.J. Schowalter ◽  
J.E. Ayers ◽  
S.K. Ghandhi ◽  
Shin Hashimoto ◽  
W.M. Gibson ◽  
...  
Keyword(s):  
Layer Structure ◽  
High Energy ◽  
Buffer Layers ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Ion Channeling ◽  
Gaas Films ◽  
Mev Protons ◽  
Good Agreement

AbstractEpitaxial layers of (111) GaAs of approximately 1 µm thickness were grown on epitaxial CaF2 buffer layers which were either 140 or 380 nm thick on Si(111) substrates. The best nucleation temperature for the GaAs on CaF2/Si(111) we have observed was 620 °C. This resulted in high quality GaAs films which exhibited channeling minimum yields of 4%. The density of threading dislocations in the GaAs layers was observed by TEM to be ~108 cm-2. Double-crystal x-ray diffraction measurements showed that the strain (ε┴.) was less than 2.2×10-4 in both sets of GaAs samples. Ion channeling, however, revealed a large tetragonal strain of 3.5×10-3 (ε┴ = 1.7×10-3) in the thinner (140 nm) CaF2 buffer layers. By doing ion channeling with high energy (2.5 MeV) protons, it was possible to determine strain more accurately. Using this technique, we were able to set an upper limit for the tetragonal strain of 2.5×10-4 in both the GaAs (which implies ε┴ < 8×10-5 and CaF2 (ε┴ < 1.5×10-4) layers for the thicker (380 nm) CaF2 buffer layer structure. These results are in good agreement with the strain predicted from previous strain measurements of CaF2 epitaxial layers on Si.

Large scale MOCVD growth of GaAs-on-Si by atomic layer epitaxy using initial buffer layers

1990 ◽  
Vol 106 (2-3) ◽  
pp. 421-425 ◽  
Author(s):  
Norio Hayafuji ◽  
Motoharu Miyashita ◽  
Hisao Kumabe ◽  
Toshio Murotani
Keyword(s):  
Large Scale ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Atomic Layer Epitaxy ◽  
Gaas On Si ◽  
Mocvd Growth ◽  
Initial Buffer

Initial Buffer Layers on the Growth of InGaP on Si by MBE

1996 ◽  
Vol 441 ◽  
Author(s):  
H. Kawanami ◽  
S. Ghosh ◽  
I. Sakata ◽  
T. Sekigawa
Keyword(s):  
High Temperature ◽  
Surface Structure ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Single Domain ◽  
Buffer Layers ◽  
Structure Control ◽  
Si Substrates ◽  
Direct Growth ◽  
Initial Buffer

AbstractSingle domain InxGa(1-x)P (x=0.3) films were successfully grown on Si(001) misoriented substrates by molecular beam epitaxy with a solid phosphorous source. The effects of interfacial buffer layers such as InGaP (i.e. direct growth without buffer layer), GaP, AlP, and GaAs were examined. Also a Si epitaxial buffer layer was tried to control the Si surface structure. Mirror like surfaces were obtained for all films with RHEED patterns of (2×1) single domain surface structure. PL intensities for all films indicated almost the same values except for the films with a Si epitaxial buffer layer. The films with a Si epitaxial buffer layer had almost three times larger PL intensities than the films without Si epitaxial buffer layer. The results suggest incomplete cleaning of the Si surface by the high temperature (1000 °C) treatment and possibility of surface structure control for Si substrates by a Si epitaxial buffer layer.

A Tem Study of Defect Structure in GaAs Film on Si Substrate

1993 ◽  
Vol 325 ◽  
Author(s):  
Sahn Nahm ◽  
Hee-Tae Lee ◽  
Sang-Gi Kim ◽  
Kyoung-Ik Cho
Keyword(s):  
Buffer Layer ◽  
Defect Structure ◽  
Stacking Faults ◽  
Misfit Dislocations ◽  
Gaas Film ◽  
Si Substrate ◽  
Moiré Fringes ◽  
Gaas Films ◽  
Layer Stacking ◽  
Gaas Buffer Layer

AbstractFor the GaAs buffer layer deposited on Si substrate at 80°C and annealed at 300°C for 10 min, the size of most GaAs islands was observed as ∼ 10 nm but large islands (∼ 40 nm) were also seen. According to the calculation of spacing of moire fringes, large GaAs islands are considered to be rotated about 4 ° with respect to the Si substrate normal. However, for the main GaAs film overgrown on the GaAs buffer layer at 580 °C, moire fringes with the spacing of 5 nm (GaAs film without rotation) completely covered the surface of Si substrate. Misfit dislocations and stacking faults were already formed at the growth stage of buffer layer. Stacking faults and misfit dislocations consisting of Lomer and 60 ° dislocations were observed in GaAs films grown at 580 °C. However, after rapid thermal annealing at 900 °C for 10 sec, only Lomer dislocations with 1/2[110] and 1/2[-110] Burgers vectors were observed.

Effect of Aluminum Nitride Buffer Layer Temperature on Gallium Nitride Grown by OMVPE

1994 ◽  
Vol 339 ◽  
Author(s):  
L. B. Rowland ◽  
K. Doverspike ◽  
D. K. Gaskill ◽  
J. A. Freitas
Keyword(s):  
Gallium Nitride ◽  
Buffer Layer ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Layer Growth ◽  
Buffer Layers ◽  
Double Crystal ◽  
Relative Crystallinity ◽  
Excitonic Emission ◽  
Aln Buffer

ABSTRACTGallium nitride layers were grown by organometallic vapor phase epitaxy on AlN buffer layers deposited in the range of 450–650°C. The GaN growth conditions were kept constant so that changes in film properties were due only to changes in the buffer layer growth temperature. A monotonie improvement in relative crystallinity as measured by double-crystal X-ray diffraction corresponded with a decrease in buffer layer growth temperature. Improvements in GaN electron transport at 300 and 77 K were also observed with decreasing AlN buffer layer temperature. Photoluminescence spectra for the lowest temperatures studied were dominated by sharp excitonic emission, with some broadening of the exciton linewidth observed as the buffer layer growth temperature was increased. The full width at half maximum of the excitonic emission was 2.7 meV for GaN grown on a 450°C buffer layer. These results indicate that minimizing AlN buffer layer temperature results in improvements in GaN film quality.

scholarly journals Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications

2011 ◽  
Vol 62 (2) ◽  
pp. 93-98 ◽  
Author(s):  
Stanislav Hasenöhrl ◽  
Jozef Novák ◽  
Ivo Vávra ◽  
Ján Šoltýs ◽  
Michal Kučera ◽  
...  
Keyword(s):  
Band Gap ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Growth Parameters ◽  
Light Emitting Diode ◽  
Lattice Parameter ◽  
Buffer Layers ◽  
Light Emitting ◽  
Optoelectronic Applications ◽  
Band Gap Structure

Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications Compositionally graded epitaxial semiconductor buffer layers are prepared with the aim of using them as a virtual substrate for following growth of heterostructures with the lattice parameter different from that of the substrates available on market (GaAs, GaP, InP or InAs). In this paper we report on the preparation of the step graded InxGa1-xP buffer layers on the GaP substrate. The final InxGa1-xP composition xIn was chosen to be at least 0.27. At this composition the InxGa1-xP band-gap structure converts from the indirect to the direct one and the material of such composition is suitable for application in light emitting diode structures. Our task was to design a set of layers with graded composition (graded buffer layer) and to optimize growth parameters with the aim to prepare strain relaxed template of quality suitable for the subsequent epitaxial growth.

Material and Device Characteristics of MBE Microwave Power FETs with Buffer Layers Grown at Low Temperature (300°C)

1991 ◽  
Vol 241 ◽  
Author(s):  
J. M. Ballingall ◽  
Pin Ho ◽  
R. P. Smith ◽  
S. Wang ◽  
G. Tessmer ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hall Effect ◽  
Buffer Layer ◽  
Active Layer ◽  
Cross Sections ◽  
Microwave Power ◽  
Buffer Layers ◽  
Heat Treated ◽  
Gaas Buffer Layer ◽  
5 Ghz

ABSTRACTMBE GaAs grown at low temperature (300°C) is evaluated for its suitability as a buffer layer for microwave power FETs. Hall effect and capacitance-voltage (C-V) measurements show that low temperature (LT) buffers may have strong deleterious effects on the electronic quality of FET active layers unless they are heat-treated in-situ at 600'C and topped with a thin (∼0. lμm) 600°C GaAs buffer prior to growth of the FET active layer. The voltage isolation properties of the LT buffers are found to be thermally stable to rapid thermal anneals up to 870°C for 10 seconds.Transmission electron microscopy (TEM) cross-sections were examined on FET layers with LT buffer layers which ranged in thickness from 0.1μm to 1.0μm. The TEM reveals a high density (∼1017 cm−3) of small (<100Å) arsenic precipitates in all of the buffer layers studied. In cases where the LT buffer is not heat treated and topped with a thin 600°C GaAs buffer layer, dislocations and arsenic precipitates extend from the buffer layer into the FET active layer. Their presence in the active layer correlates with the degradation in electronic properties observed with Hall effect and CV. Microwave power FETs were measured at DC and 5 GHz. DC and RF results for devices with LT buffer layers are comparable to devices with conventional buffer layers.

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