Evolution of MBE HgCdTe defect structure studied with ion milling method

Abstract Understanding solder joints is very important for failure analysis in semiconductor manufacturing because it is commonly used for mounting semiconductor devices on boards. However, regarding sample preparation for analysis, solder poses challenges in crosssection preparation due to the differences in melting point and hardness of its constituents. Therefore, precision cutting methods such as ion milling are required. On the other hand, ion milling method usually causes thermal damage during cutting. In this paper, we tried to optimize the sample temperature during Ar ion milling using liquid nitrogen cooling [1].

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Ion Milling Method for Revealing the HgCdTe MBE-grown Structure

10.1109/wzee54157.2021.9576983 ◽

2021 ◽

Author(s):

Malgorzata Pociask-Bialy

Keyword(s):

Ion Milling ◽

Milling Method ◽

Grown Structure

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The powerful combination of ion-milling method for XTEM preparation: Application to a diffusion barrier coating on Nb substrate

10.1063/1.4730731 ◽

2012 ◽

Author(s):

Eni Sugiarti ◽

Youming Wang ◽

Somei Ohnuki

Keyword(s):

Diffusion Barrier ◽

Ion Milling ◽

Barrier Coating ◽

Milling Method

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Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy

Opto-Electronics Review ◽

10.2478/s11772-010-1016-9 ◽

2010 ◽

Vol 18 (3) ◽

Cited By ~ 4

Author(s):

I.I. Izhnin ◽

I.A. Denisov ◽

N.A. Smirnova ◽

M. Pociask ◽

K.D. Mynbaev

Keyword(s):

Liquid Phase ◽

Thermal Treatment ◽

Liquid Phase Epitaxy ◽

Defect Structure ◽

Molecular Beam ◽

Donor Concentration ◽

Ion Milling ◽

High Concentration ◽

Low Temperature Annealing ◽

Cdznte Substrates

AbstractIon milling, as a tool for “stirring” defects in HgCdTe by injecting high concentration of interstitial mercury atoms, was used for studying films grown by liquid phase epitaxy (LPE) on CdZnTe substrates. The films appeared to have very low residual donor concentration (∼1014 cm−3), yet, similar to the material grown by molecular beam epitaxy, contained Te-related neutral defects, which the milling activated electrically. It is shown that ion milling has a stronger effect on HgCdTe defect structure than thermal treatment, and yet eventually brings the material to an “equilibrium” state with defect concentration lower than that after low-temperature annealing.

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Ultrathin specimen preparation by a low-energy Ar-ion milling method

Microscopy ◽

10.1093/jmicro/dfs073 ◽

2012 ◽

Vol 62 (2) ◽

pp. 321-326 ◽

Cited By ~ 9

Author(s):

Masanori Mitome

Keyword(s):

Low Energy ◽

Specimen Preparation ◽

Ion Milling ◽

Milling Method

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Applications of the Hybrid Ion Milling Method to Neodymium Magnets

Microscopy and Microanalysis ◽

10.1017/s143192761300648x ◽

2013 ◽

Vol 19 (S2) ◽

pp. 898-899

Author(s):

T. Shdiara ◽

M. Konomi ◽

S. Watanabe

Keyword(s):

Ion Milling ◽

Milling Method ◽

Neodymium Magnets

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

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Cross-Sectional Tem Sample Preparation of Phase-Change Optical Disk by Ion Milling

MRS Proceedings ◽

10.1557/proc-480-251 ◽

1997 ◽

Vol 480 ◽

Author(s):

T. Kouzaki ◽

K. Yoshioka ◽

E. Ohno

Keyword(s):

Sample Preparation ◽

Phase Change ◽

Polymer Substrate ◽

Ion Milling ◽

Cross Sectional ◽

Milling Method ◽

Optical Disks ◽

The Difference ◽

Argon Ion ◽

Sectional Structure

AbstractIt is very difficult to prepare cross-sectional TEM samples for phase-change optical disks by conventional argon ion milling because of the difference of ion milling rates between multilayers and the polymer substrate. We have been successful in preparing samples of those optical disks by ion milling method with dissolution of the polymer substrate in advance. The cross-sectional structure was observed more clearly in this method rather than in ultramicrotome method.

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