Cross-Sectional Tem Sample Preparation of Phase-Change Optical Disk by Ion Milling

1997 ◽  
Vol 480 ◽  
Author(s):  
T. Kouzaki ◽  
K. Yoshioka ◽  
E. Ohno
Keyword(s):  
Sample Preparation ◽  
Phase Change ◽  
Polymer Substrate ◽  
Ion Milling ◽  
Cross Sectional ◽  
Milling Method ◽  
Optical Disks ◽  
The Difference ◽  
Argon Ion ◽  
Sectional Structure

AbstractIt is very difficult to prepare cross-sectional TEM samples for phase-change optical disks by conventional argon ion milling because of the difference of ion milling rates between multilayers and the polymer substrate. We have been successful in preparing samples of those optical disks by ion milling method with dissolution of the polymer substrate in advance. The cross-sectional structure was observed more clearly in this method rather than in ultramicrotome method.

Transmission Electron Microscopy Studies of Aluminum Oxidation

1985 ◽  
Vol 43 ◽  
pp. 268-269
Author(s):  
J.Y. Lee
Keyword(s):  
Nucleation And Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Polycrystalline Aluminum ◽  
Axis Orientation ◽  
Temperature Oxidation ◽  
Aluminum Oxidation ◽  
Transmission Electron ◽  
High Resolution Images ◽  
Argon Ion

In the oxidation of metals and alloys, microstructural features at the atomic level play an important role in the nucleation and growth of the oxide, but little is known about the atomic mechanisms of high temperature oxidation. The present paper describes current progress on crystallographic aspects of aluminum oxidation. The 99.999% pure, polycrystalline aluminum was chemically polished and oxidized in 1 atm air at either 550°C or 600°C for times from 0.5 hr to 4 weeks. Cross-sectional specimens were prepared by forming a sandwich with epoxy, followed by mechanical polishing and then argon ion milling. High resolution images were recorded in a <110>oxide zone-axis orientation with a JE0L JEM 200CX microscope operated at 200 keV.

Optimization of Cross Sectioning for Solder Joint using Broad Ar Ion Beam Milling with Temperature Control

2020 ◽  
Author(s):  
Natsuko Asano ◽  
Tamae Omoto ◽  
Jinfeng Lu ◽  
Hirobumi Morita ◽  
Natasha Erdman ◽  
...  
Keyword(s):  
Melting Point ◽  
Solder Joint ◽  
Sample Preparation ◽  
Semiconductor Manufacturing ◽  
Thermal Damage ◽  
Ion Beam ◽  
The Other ◽  
Ion Milling ◽  
Milling Method ◽  
Liquid Nitrogen Cooling

Abstract Understanding solder joints is very important for failure analysis in semiconductor manufacturing because it is commonly used for mounting semiconductor devices on boards. However, regarding sample preparation for analysis, solder poses challenges in crosssection preparation due to the differences in melting point and hardness of its constituents. Therefore, precision cutting methods such as ion milling are required. On the other hand, ion milling method usually causes thermal damage during cutting. In this paper, we tried to optimize the sample temperature during Ar ion milling using liquid nitrogen cooling [1].

scholarly journals Cross-sectional TEM Sample Preparation for Nanowires or Porous Films Grown on a Substrate

2007 ◽  
Vol 15 (1) ◽  
pp. 44-45
Author(s):  
Chengyu Song
Keyword(s):  
Low Temperature ◽  
Sample Preparation ◽  
Traditional Method ◽  
Sample Surface ◽  
Specimen Preparation ◽  
Air Bubbles ◽  
Ion Milling ◽  
Porous Films ◽  
Cross Sectional ◽  
Single Section

Nanowires or porous films grown on a substrate normally lack mechanical strength, and may be subject to damage during specimen preparation. When we made cross-sectional TEM specimen for this type of sample, we modified the traditional method by covering the sample with epoxy to improve the film strength, and applying single-section ion milling to protect the film from over-milling.The sample surface is first covered with G1 epoxy. We choose G1 for this application because it is relatively thick and cures at low temperature. For samples with a dense-growth of nanowires or a thick porous film, a brief moment in vacuum helps to get rid of the air bubbles in the epoxy. The glue is cured at 100 degree C for 10 minutes, until its color turns to a reddish brown. To remove the excess glue and flatten the surface, the sample is then ground and polished until the glue is less than 0.1 mm thick.

Fast Preparation of Ultrathin FIB Lamellas for MEMs-Based In Situ TEM Experiments

2016 ◽  
Vol 850 ◽  
pp. 722-727 ◽  
Author(s):  
Hui Wang ◽  
Shang Gang Xiao ◽  
Qiang Xu ◽  
Tao Zhang ◽  
Henny Zandbergen
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Metallic Alloy ◽  
In Situ Tem ◽  
Ion Milling ◽  
Electrochemical Polishing ◽  
Argon Ion

The preparation of thin lamellas by focused ion beam (FIB) for MEMS-based in situ TEM experiments is time consuming. Typically, the lamellas are of ~5μm*10μm and have a thickness less than 100nm. Here we demonstrate a fast lamellas’ preparation method using special fast cutting by FIB of samples prepared by conventional TEM sample preparation by argon ion milling or electrochemical polishing methods. This method has been applied successfully on various materials, such as ductile metallic alloy Ti68Ta27Al5, brittle ceramics K0.5Na0.5NbO3-6%LiNbO3 and semiconductor Si. The thickness of the lamellas depends on the original TEM sample.

Enhanced TEM Sample Preparation Using In-situ Low Energy Argon Ion Milling

2009 ◽  
Author(s):  
Heiko Stegmann ◽  
Yvonne Ritz ◽  
Dirk Utess ◽  
René Hübner ◽  
Ehrenfried Zschech ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Low Energy ◽  
Ion Milling ◽  
Argon Ion

A Multi-Step Transmission Electron Microscopy Sample Preparation Technique for Cracked, Heavily Damaged, Brittle Materials

2014 ◽  
Vol 20 (6) ◽  
pp. 1646-1653
Author(s):  
Claire V. Weiss Brennan ◽  
Scott D. Walck ◽  
Jeffrey J. Swab
Keyword(s):  
Sample Preparation ◽  
Brittle Materials ◽  
Ceramic Materials ◽  
Preparation Technique ◽  
Ion Milling ◽  
Cross Sectional ◽  
Multiphase Materials ◽  
Sample Preparation Technique ◽  
Transmission Electron ◽  
Archaeological Materials

AbstractA new technique for the preparation of heavily cracked, heavily damaged, brittle materials for examination in a transmission electron microscope (TEM) is described in detail. In this study, cross-sectional TEM samples were prepared from indented silicon carbide (SiC) bulk ceramics, although this technique could also be applied to other brittle and/or multiphase materials. During TEM sample preparation, milling-induced damage must be minimized, since in studying deformation mechanisms, it would be difficult to distinguish deformation-induced cracking from cracking occurring due to the sample preparation. The samples were prepared using a site-specific, two-step ion milling sequence accompanied by epoxy vacuum infiltration into the cracks. This technique allows the heavily cracked, brittle ceramic material to stay intact during sample preparation and also helps preserve the true microstructure of the cracked area underneath the indent. Some preliminary TEM results are given and discussed in regards to deformation studies in ceramic materials. This sample preparation technique could be applied to other cracked and/or heavily damaged materials, including geological materials, archaeological materials, fatigued materials, and corrosion samples.

A Novel Sample Preparation Approach for Dopant Profiling of 14 nm FinFET Devices with Scanning Capacitance Microscopy

2020 ◽  
Author(s):  
Nirmal Adhikari ◽  
Phil Kaszuba ◽  
Gaitan Mathieu ◽  
Erik McCullen ◽  
Thom Hartswick ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Low Voltage ◽  
Negative Impact ◽  
Electrical Contact ◽  
Process Models ◽  
Ion Milling ◽  
Cross Sectional ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling ◽  
Profile Control

Abstract Three-dimensional device (FinFET) doping requirements are challenging due to fin sidewall doping, crystallinity control, junction profile control, and leakage control in the fin. In addition, physical failure analyses of FinFETs can frequently reach a “dead end” with a No Defect Found (NDF) result when channel doping issues are the suspected culprit (e.g., high Vt, low Vt, low gain, sub-threshold leakage, etc.). In new technology development, the lack of empirical dopant profile data to support device and process models and engineering has had, and continues to have, a profound negative impact on these emerging technologies. Therefore, there exists a critical need for dopant profiling in the industry to support the latest technologies that use FinFETs as their fundamental building block [1]. Here, we discuss a novel sample preparation method for cross-sectional dopant profiling of FinFET devices. Our results show that the combination of low voltage (&lt;500eV), shallow angle (~10 degree) ion milling, dry etching, and mechanical polishing provides an adequately smooth surface (Rq&lt;5Å) and minimizes surface amorphization, thereby allowing a strong Scanning Capacitance Microscopy (SCM) signal representative of local active dopant (carrier) concentration. The strength of the dopant signal was found to be dependent upon mill rate, electrical contact quality, amorphous layer presence and SCM probe quality. This paper focuses on a procedure to overcome critical issues during sample preparation for dopant profiling in FinFETs.

Advanced Tools and Techniques for Delayering and Cross-Sectioning Semiconductor Devices

2017 ◽  
Author(s):  
P. Nowakowski ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Sample Preparation ◽  
Energy Dispersive Spectrometry ◽  
Semiconductor Device ◽  
Low Energy ◽  
Ion Milling ◽  
Broad Beam ◽  
Complete Knowledge ◽  
Microelectronics Industry ◽  
Tools And Techniques ◽  
Argon Ion

Abstract Conventional mechanical sample preparation is a difficult and uncontrolled process that does not allow targeting of a specific depth or layer. Because of the difficulties presented by mechanical sample preparation, there has been an emergence of beam-based techniques for device delayering applications. Cross-sectioning is another commonly used technique used in microelectronics industry investigations; when combined with delayering, one can gain complete knowledge about a device's faults. This paper presents a development in semiconductor device investigation using low energy, broad-beam argon ion milling. The results highlight that broad-beam Ar ion milling produces excellent surface quality, which allows high resolution scanning electron microscope observation and energy dispersive spectrometry analyses, even at low energy.

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