Elastic and relaxor behavior in nanocrystalline La-modified PZT-films

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.

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Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

MRS Proceedings ◽

10.1557/proc-223-273 ◽

1991 ◽

Vol 223 ◽

Cited By ~ 1

Author(s):

Thomas M. Graettinger ◽

O. Auciello ◽

M. S. Ameen ◽

H. N. Al-Shareef ◽

K. Gifford ◽

...

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Growth Parameters ◽

Ion Beam ◽

Lead Zirconate ◽

Electro Optic ◽

Integrated Optical ◽

Pzt Films ◽

Ion Beam Sputter Deposition ◽

Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

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Design, synthesis, microstructure and electrical properties of thermal-strained PZT films

Journal of the European Ceramic Society ◽

10.1016/j.jeurceramsoc.2021.04.023 ◽

2021 ◽

Author(s):

Xiaokuo Er ◽

Fei Shao ◽

Sizhe Diao ◽

Hongliang Wang ◽

Qinghua Ma ◽

...

Keyword(s):

Electrical Properties ◽

Design Synthesis ◽

Pzt Films

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Energy-storage performance of NaNbO3 based multilayered capacitors

Journal of Materials Chemistry C ◽

10.1039/d1tc01826d ◽

2021 ◽

Author(s):

Li-Feng Zhu ◽

Yongke Yan ◽

Haoyang Leng ◽

Xiaotian Li ◽

Li-Qian Cheng ◽

...

Keyword(s):

Energy Storage ◽

Grain Refinement ◽

Relaxor Behavior ◽

Storage Performance ◽

Multilayer Capacitors

Energy-storage performances of NaNbO3 system were effectively enhanced by composition engineering inducing relaxor behavior and grain refinement. Excellent Wrec = 3.7 J cm−3 and η = 82.1% were achieved in the NN-0.04CZ-0.16BNT multilayer capacitors.

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Collective Dynamics of Off-Center Ions inK1−xLixTaO3: A Model of Relaxor Behavior

Physical Review Letters ◽

10.1103/physrevlett.73.3467 ◽

1994 ◽

Vol 73 (25) ◽

pp. 3467-3470 ◽

Cited By ~ 110

Author(s):

J. Toulouse ◽

B. E. Vugmeister ◽

R. Pattnaik

Keyword(s):

Relaxor Behavior ◽

Collective Dynamics

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Leakage Current in Low-Temperature PVD PZT Films

2019 IEEE International Symposium on Applications of Ferroelectrics (ISAF) ◽

10.1109/isaf43169.2019.9034930 ◽

2019 ◽

Cited By ~ 1

Author(s):

Daniel Monteiro Diniz Reis ◽

Sven Rzepka ◽

Karla Hiller

Keyword(s):

Low Temperature ◽

Leakage Current ◽

Pzt Films

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Modification of microstructure on PZT films for ultrahigh frequency transducer

Ceramics International ◽

10.1016/j.ceramint.2015.03.202 ◽

2015 ◽

Vol 41 ◽

pp. S650-S655 ◽

Cited By ~ 4

Author(s):

Chunlong Fei ◽

Zeyu Chen ◽

Wayne Ming Fong ◽

Benpeng Zhu ◽

Lingyan Wang ◽

...

Keyword(s):

Ultrahigh Frequency ◽

Pzt Films ◽

Frequency Transducer

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Sol-Gel Derived PZT Thick Films with Nano-Sized Microstructure

MRS Proceedings ◽

10.1557/proc-748-u14.9 ◽

2002 ◽

Vol 748 ◽

Cited By ~ 1

Author(s):

C. L. Zhao ◽

Z. H. Wang ◽

W. Zhu ◽

O. K. Tan ◽

H. H. Hng

Keyword(s):

Lead Zirconate Titanate ◽

Electromechanical Coupling ◽

Thick Films ◽

Sol Gel ◽

Essential Element ◽

Processing Parameters ◽

Lead Zirconate ◽

Piezoelectric Response ◽

Coupling Coefficients ◽

Pzt Films

ABSTRACTLead zirconate titanate (PZT) films are promising for acoustic micro-devices applications because of their extremely high electromechanical coupling coefficients and excellent piezoelectric response. Thicker PZT films are crucial for these acoustic applications. A hybrid sol-gel technology has been developed as a new approach to realize simple and cost-effective fabrication of high quality PZT thick films. In this paper, PZT53/47 thick films with a thickness of 5–50 μm are successfully deposited on Pt-coated silicon wafer by using the hybrid sol-gel technology. The obtained PZT thick films are dense, crack-free, and have a nano-sized microstructure. The processing parameters of this technology have been evaluated. The microstructure of the film has been observed using field-emission scanning electron microscopy and the crystallization process has been monitored by the X-ray diffraction. The thick films thus made are good candidates for fabrication of piezoelectric diaphragm which will be an essential element of microspeaker and microphone arrays.

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PIEZOELECTRIC PROPERTIES OF PZT FILMS PREPARED BY HYDROTHERMAL METHOD

International Journal of Modern Physics B ◽

10.1142/s0217979206040404 ◽

2006 ◽

Vol 20 (25n27) ◽

pp. 3805-3810 ◽

Cited By ~ 5

Author(s):

NOBUYOSHI FUJIWARA ◽

KAZUHIRO KUSUKAWA ◽

KHAIRUNISAK ABDUL RAZAK ◽

WEI GAO

Keyword(s):

Hydrothermal Method ◽

Lead Zirconate Titanate ◽

Piezoelectric Properties ◽

Compressive Loading ◽

Pure Titanium ◽

Lead Zirconate ◽

Loading Frequency ◽

X Ray Diffraction ◽

Pzt Films ◽

Transverse Effect

Lead zirconate titanate (PZT) thin films of 5 μm thick were produced by a hydrothermal method on pure titanium substrates. ZrOCl 2-8 H 2 O , Pb ( NO 3)2 and TiO 2 were used as precursors and KOH as a promoter. The hydrothermal synthesis of PZT includes nucleation and crystal growth processes at 120°C or 140°C. The crystallization states were investigated by using scanning electron microscopy and X-Ray diffraction. Piezoelectric properties were evaluated from unimorph cantilever type actuators made of the films. The relationships between the deflection of the actuator due to piezoelectric transverse effect and applied electric field in the direction of thickness of the films showed good linearity. The output voltage from the films under cyclic compressive loading increased with increasing loading frequency, and is saturated at 10 Hz. The PZT films produced by the present methods are satisfactory as a smart material, and are better than the films produced using TiCl 4 as Ti precursor.

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