scholarly journals Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence

1989 ◽  
Vol 55 (16) ◽  
pp. 1647-1649 ◽  
Author(s):  
H. A. Zarem ◽  
P. C. Sercel ◽  
J. A. Lebens ◽  
L. E. Eng ◽  
A. Yariv ◽  
...  
Keyword(s):  
Diffusion Length ◽  
Direct Determination ◽  
Ambipolar Diffusion

scholarly journals Direct determination of the ambipolar diffusion length in strained InxGa1−xAs/InP quantum wells by cathodoluminescence

1993 ◽  
Vol 62 (19) ◽  
pp. 2411-2412 ◽  
Author(s):  
Robert B. Lee ◽  
Kerry J. Vahala ◽  
Chung‐En Zah ◽  
Rajaram Bhat
Keyword(s):  
Quantum Wells ◽  
Diffusion Length ◽  
Direct Determination ◽  
Ambipolar Diffusion

A-Si:H Ambipolar Diffusion Length and Effective Lifetime Measured by Flying Spot Technique (FST)

1991 ◽  
Vol 219 ◽  
Author(s):  
M. Vieira ◽  
R. Martins ◽  
E. Fortunato ◽  
F. Soares ◽  
L. Guimaraes
Keyword(s):  
Laser Beam ◽  
Transient Analysis ◽  
Diffusion Length ◽  
Transport Equations ◽  
Ambipolar Diffusion ◽  
Schottky Barriers ◽  
Effective Lifetime ◽  
Asymmetrical Distribution ◽  
Flying Spot

ABSTRACTThe determination of the ambipolar diffusion length, L*, and the effective lifetime, τ*, in p/i and a-Si:H Schottky barriers (ITO/p/a-Si:H/Al-Si; Cr/a-Si:H/Cr/Ag) have been determined by Flying Spot Technique, FST. This technique consists in the transient analysis of the photocurrent/photopotential induced by a laser beam that moves perpendicularly to the structure with a constant motion ratio, at different velocities. Taking into account the competition between the diffusion/drift velocities of the excess carriers and the velocity of the flying spot, it is possible to solve the transport equations and to compute separately L* and τ*, from the asymmetrical distribution responses.

A General Analysis of Steady State Photocarrier Grating Technique for the Determination of Ambipolar Diffusion Length

1990 ◽  
Vol 192 ◽  
Author(s):  
Yuan-Min Li
Keyword(s):  
Steady State ◽  
Electric Field ◽  
Dielectric Relaxation ◽  
General Formula ◽  
Applied Electric Field ◽  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
General Analysis

ABSTRACTA general photoconductivity formula is derived for the case of a semiconductor steady state photocarrier grating (SSPG)1. It is shown that, under the condition of weak applied electric field, the ambipolar diffusion length can be determined by the SSPG technique1without the lifetime-regime restriction2,3 if the lifetime of photocarriers is known. The general formula presented here is reduced to the simple lifetime-regime formula1–3 under the condition of fast dielectric relaxation.

The Direct Determination of I131 in Heterogeneous Fecal Specimens

1961 ◽  
Vol 41 (4) ◽  
pp. 380-384 ◽  
Author(s):  
Arthur F. Dratz ◽  
James C. Coberly
Keyword(s):  
Direct Determination

A New Method for Direct Determination of the Recoilless Fraction with Application to Magnetic Nanoparticles

2002 ◽  
Vol 721 ◽  
Author(s):  
Monica Sorescu
Keyword(s):  
Room Temperature ◽  
Average Particle Size ◽  
Direct Determination ◽  
Average Particle ◽  
Lattice Method ◽  
Recoilless Fraction ◽  
Single Room ◽  
Magnetite Particles ◽  
Physical Mixtures

AbstractWe propose a two-lattice method for direct determination of the recoilless fraction using a single room-temperature transmission Mössbauer measurement. The method is first demonstrated for the case of iron and metallic glass two-foil system and is next generalized for the case of physical mixtures of two powders. We further apply this method to determine the recoilless fraction of hematite and magnetite particles. Finally, we provide direct measurement of the recoilless fraction in nanohematite and nanomagnetite with an average particle size of 19 nm.

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