Segregation of Si δ doping in GaAs‐AlGaAs quantum wells and the cause of the asymmetry in the current‐voltage characteristics of intersubband infrared detectors

1993 ◽  
Vol 63 (6) ◽  
pp. 761-763 ◽  
Author(s):  
H. C. Liu ◽  
Z. R. Wasilewski ◽  
M. Buchanan ◽  
Hanyou Chu
Keyword(s):  
Quantum Wells ◽  
Infrared Detectors ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
The Asymmetry

Confinement Levels in Passivated SiGe/Si Quantum Well Structures

2009 ◽  
Vol 156-158 ◽  
pp. 541-546
Author(s):  
I.V. Antonova ◽  
E.P. Neustroev ◽  
S.A. Smagulova ◽  
M.S. Kagan ◽  
P.S. Alekseev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Current Flow ◽  
Deep Level ◽  
Sige Layer ◽  
Quantum Well Structures ◽  
Organic Monolayer ◽  
Current Voltage ◽  
Structure Surface ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

The set of quantum confinement levels in SiGe quantum wells (QW) was observed in the temperature range from 80 to 300 K by means of charge deep-level transient spectroscopy (Q-DLTS) and transport measurements. These observations proved possible due to a passivation of structure surface with organic monolayer deposition. Si/SiGe/Si structures with different Ge contents in SiGe layer were studied. The confined levels in passivated structures became apparent through DLTS measurements as various activation energies in temperature dependence of the rate of carrier emission from QW. It was found that the recharging of SiGe QWs and carrier emission accomplish due to thermo-stimulated tunneling. The steps in the current-voltage characteristics originated from direct tunneling via the confined states were found to determine the current flow at high fields.

scholarly journals Исследование вольт-амперных характеристик светодиодных гетероструктур на основе InAsSb в диапазоне температур 4.2-300 K

2021 ◽  
Vol 55 (6) ◽  
pp. 502
Author(s):  
А.А. Семакова ◽  
Н.Л. Баженов ◽  
К.Д. Мынбаев ◽  
А.В. Черняев ◽  
С.С. Кижаев ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Solid Solutions ◽  
Carrier Transport ◽  
Charge Carriers ◽  
Leakage Currents ◽  
Temperature Range ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Additional Channel

The results of a study of the current-voltage characteristics of LED heterostructures with an active region based on InAsSb solid solutions and InAsSb/InAs and InAsSb/InAsSbP quantum wells (QWs) in the temperature range 4.2–300 K are presented. The mechanisms of the carrier transport depending on the temperature and design of the heterostructure was determined. It is shown that the charge transport through the heterostructures is governed by the diffusion and recombination mechanisms at temperatures close to 300 K; in the temperature range 4.2–77 K, the contribution of the tunnelling mechanism was observed. For heterostructure InAs/InAs/InAs0.15Sb0.31P0.54 the additional channel of the carrier transport was determined. It was shown that the presence of 108 QWs InAs0.88Sb0.12/InAs into the active region of the heterostructure led to an increase in the leakage currents through the heterojunction in the whole temperature range, which is probably related to the tunnelling of charge carriers.

scholarly journals A new photodetector structure based on graphene nanomeshes: an ab initio study

2020 ◽  
Vol 11 ◽  
pp. 1036-1044
Author(s):  
Babak Sakkaki ◽  
Hassan Rasooli Saghai ◽  
Ghafar Darvish ◽  
Mehdi Khatir
Keyword(s):  
Infrared Detectors ◽  
Density Functional ◽  
Tight Binding ◽  
Optical Devices ◽  
Functional Theory ◽  
Semiconducting Properties ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Non Equilibrium Green’S Function ◽  
Insight Into

Recent experiments suggest graphene-based materials as candidates in future electronic and optoelectronic devices. In this paper, we propose to investigate new photodetectors based on graphene nanomeshes (GNMs). Density functional theory (DFT) calculations are performed to gain insight into electronic and optical characteristics of various GNM structures. To investigate the device-level properties of GNMs, their current–voltage characteristics are explored by DFT-based tight-binding (DFTB) in combination with non-equilibrium Green’s function (NEGF) methods. Band structure analysis shows that GNMs have both metallic and semiconducting properties depending on the arrangements of perforations. Also, absorption spectrum analysis indicates attractive infrared peaks for GNMs with semiconducting characteristics, making them better photodetectors than graphene nanoribbon (GNR)-based alternatives. The results suggest that GNMs can be potentially used in mid-infrared detectors with specific detectivity values that are 100-fold that of graphene-based devices and 1000-fold that of GNR-based devices. Hence, the special properties of graphene combined with the quantum feathers of the perforation makes it suitable for optical devices.

Performance InGaN and AlGaInP LED Characteristic Dependence on Quantum Wells

2014 ◽  
Vol 1070-1072 ◽  
pp. 600-603 ◽  
Author(s):  
Oleg Rabinovich ◽  
Sergey Didenko ◽  
Sergey Legotin
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Spectral Characteristics ◽  
Optimal Structure ◽  
Inhomogeneous Distribution ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

The simulation of multicomponent nanoheterostructures (MNH) InGaN for light-emitting diodes (LEDs) was made. The results are presented in graphs, for example, the current-voltage characteristics, the dependence of the internal quantum efficiency (IQE) on the number of quantum wells (QW) and spectral characteristics. The optimal structure of the MNH and the influence of the inhomogeneous distribution of In atoms in the quantum-well region is investigated.

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