Interface structures in GaAs wafer bonding: Application to compliant substrates

. A Bulk RF MEMS switch is present in this paper. The beam structure and transmission line are separated fabricated on silicon and gallium arsenide (GaAs) wafer. The beam structure, up electrode, contact and anchor are fabricated on the silicon wafer. And transmission line and down electrode are made on the GaAs substrate. Two parts of the switch are bonded together by wafer bonding using gold layer as seed. The total area of the switch is 600 um X 600 um.

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Molecular dynamics simulations of wafer bonding

MRS Proceedings ◽

10.1557/proc-681-i2.3 ◽

2001 ◽

Vol 681 ◽

Author(s):

Kurt Scheerschmidt

Keyword(s):

Molecular Dynamics ◽

Molecular Dynamics Simulations ◽

Wafer Bonding ◽

Tight Binding ◽

Tight Binding Approximation ◽

Elementary Processes ◽

Empirical Potentials ◽

Atomic Interactions ◽

Dynamics Simulations ◽

Interface Structures

ABSTRACTMolecular dynamics simulations using empirical potentials have been employed to describe atomic interactions at interfaces created by the macroscopic wafer bonding process. Investigating perfect or distorted surfaces of different semiconductor materials as well as of silica enables one to study the elementary processes and the resulting defects at the interfaces, and to characterize the ability of the potentials used. Twist rotation due to misalignment and bonding over steps influence strongly the bondability of larger areas. Empirical potentials developed by the bond order tight-binding approximation include ∏-bonds and yield enhanced interface structures, energies, and transferability to new materials systems.

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Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity

Journal of Applied Physics ◽

10.1063/1.4807905 ◽

2013 ◽

Vol 113 (20) ◽

pp. 203512 ◽

Cited By ~ 25

Author(s):

S. Essig ◽

O. Moutanabbir ◽

A. Wekkeli ◽

H. Nahme ◽

E. Oliva ◽

...

Keyword(s):

Electrical Conductivity ◽

Wafer Bonding ◽

Atom Beam ◽

Gaas Wafer ◽

Fast Atom Beam

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Low-temperature InP∕GaAs wafer bonding using sulfide-treated surface

Applied Physics Letters ◽

10.1063/1.2172024 ◽

2006 ◽

Vol 88 (6) ◽

pp. 061104 ◽

Cited By ~ 16

Author(s):

Hui Huang ◽

Xiaomin Ren ◽

Xinyan Wang ◽

Qi Wang ◽

Yongqing Huang

Keyword(s):

Low Temperature ◽

Wafer Bonding ◽

Gaas Wafer

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Influence of the twist angle on the plasticity of the GaAs compliant substrates realized by wafer bonding

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/14/48/339 ◽

2002 ◽

Vol 14 (48) ◽

pp. 12967-12974 ◽

Cited By ~ 1

Author(s):

G Patriarche ◽

E Le Bourhis

Keyword(s):

Wafer Bonding ◽

Twist Angle ◽

Compliant Substrates

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Strength Design and Minimization of Residual Stresses in Reversible GaAs Wafer Bonding Process

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.306-308.1337 ◽

2006 ◽

Vol 306-308 ◽

pp. 1337-1342 ◽

Cited By ~ 1

Author(s):

S.T. Choi ◽

Jun Yeob Song ◽

Jae Hyun Kim ◽

S. Lee ◽

Y.Y. Earmme

Keyword(s):

Residual Stress ◽

Wafer Bonding ◽

Layer Structure ◽

Bonding Process ◽

Thermal Residual Stress ◽

Simple Method ◽

Three Point Bending ◽

Gaas Wafer ◽

Strength Design ◽

Steady State Temperature

The GaAs wafer bonding process is investigated to reduce the mechanical failures of GaAs wafer based on strength design concept. Three-point bending experiment is performed to measure the fracture strength of GaAs wafer, of which cleavage takes place on (110) plane. We propose a simple method for minimizing the thermal residual stress in a three-layer structure, of which the basic idea is to use an appropriate steady-state temperature gradient to the wafer bonding process. The optimum bonding condition of GaAs/wax/sapphire structure is determined based on the proposed method. The effect of material anisotropy on the thermal residual stress is also analyzed by finite element method.

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Passively mode-locked InAs quantum dot lasers on a silicon substrate by Pd-GaAs wafer bonding

Applied Physics Letters ◽

10.1063/1.4979534 ◽

2017 ◽

Vol 110 (14) ◽

pp. 141110 ◽

Cited By ~ 6

Author(s):

Zihao Wang ◽

Michael L. Fanto ◽

Jeffrey A. Steidle ◽

Abdelsalam A. Aboketaf ◽

Nathan A. Rummage ◽

...

Keyword(s):

Quantum Dot ◽

Wafer Bonding ◽

Silicon Substrate ◽

Quantum Dot Lasers ◽

Gaas Wafer ◽

Inas Quantum Dot

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Relaxed SiGe Layers with High Ge Content by Compliant Substrates

MRS Proceedings ◽

10.1557/proc-765-d4.7/g1.7 ◽

2003 ◽

Vol 765 ◽

Cited By ~ 1

Author(s):

H. Yin ◽

R.L. Peterson ◽

K.D. Hobart ◽

S.R. Shieh ◽

T.S. Duffy ◽

...

Keyword(s):

Lattice Constant ◽

Wafer Bonding ◽

Small Islands ◽

Lateral Expansion ◽

Strained Si ◽

Compliant Substrates ◽

Plane Lattice

AbstractRelaxed, high Ge content SiGe layers have been realized using stress balance on a compliant borophosphorosilicate glass (BPSG). A 30-nm fully-strained Si0.7Ge0.3 layer was transferred onto a 1 μm BPSG film by wafer-bonding and Smart-cut® processes, after which the continuous Si0.7Ge0.3 film was patterned into small islands to allow for lateral expansion. After the strain in Si0.7Ge0.3 islands was released by the lateral expansion resulting from the flow of the BPSG, a Si0.4Ge0.6 layer was commensurately deposited under compression. Upon equilibrium after an annealing, stress balance was formed between the SiGe films, resulting in a larger in-plane lattice constant than that of relaxed Si0.7Ge0.3. With a thiner (6 nm) Si0.7Ge0.3 starting film, an in-plane lattice constant equivalent to fully-relaxed Si0.45Ge0.55 has been obtained.

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