Carrier redistribution in organic/inorganic (poly(3,4-ethylenedioxy thiophene/poly(styrenesulfonate)polymer)-Si) heterojunction determined from infrared ellipsometry

2004 ◽  
Vol 84 (8) ◽  
pp. 1311-1313 ◽  
Author(s):  
M. Schubert ◽  
C. Bundesmann ◽  
H. v. Wenckstern ◽  
G. Jakopic ◽  
A. Haase ◽  
...  
Author(s):  
Norimichi Chinone ◽  
Yasuo Cho

Abstract Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.


1984 ◽  
Author(s):  
Thomas A. Leonard ◽  
John S. Loomis

2001 ◽  
Vol 64 (12) ◽  
Author(s):  
A. Laskarakis ◽  
S. Logothetidis ◽  
M. Gioti

1968 ◽  
Vol 115 (1) ◽  
pp. 106 ◽  
Author(s):  
Charlie E. Jones ◽  
A. Ray Hilton

2019 ◽  
Vol 36 ◽  
pp. 174-182
Author(s):  
J.M. Flores-Camacho ◽  
A. Nieto-Villena ◽  
J.R. Martínez ◽  
J.A. de la Cruz-Mendoza ◽  
G. Ortega-Zarzosa ◽  
...  

2012 ◽  
Vol 29 (9) ◽  
pp. 097201 ◽  
Author(s):  
Chuan-Feng Li ◽  
Geng Chen ◽  
Ming Gong ◽  
Hai-Qiao Li ◽  
Zhi-Chuan Niu

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