Half-metallic CrO2 thin films on Pt/TiO2/SiO2/Si substrates by chemical vapor deposition

2004 ◽  
Vol 95 (11) ◽  
pp. 6462-6465 ◽  
Author(s):  
J. Y. Son ◽  
S. H. Bang ◽  
J. W. Park ◽  
Y. H. Jang ◽  
J. H. Cho
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Half Metallic ◽  
Si Substrates

Growth of CdTe Thin Films on Polar and Nonpolar Semiconductor Substrates by Metalorganic Chemical Vapor Deposition.

1988 ◽  
Vol 144 ◽  
Author(s):  
P. Grodzinski ◽  
J.H. Mazur ◽  
A. Nouhi ◽  
R.J. Stirn ◽  
R. Sudharsananu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Gaas Surface ◽  
Organic Chemical ◽  
Orientation Relationships ◽  
Si Substrates ◽  
Cdte Thin Films

ABSTRACTElectron diffraction and high resolution electron microscopy (HREM) have been used to investigate the origin of multiple orientation-relationships and defect structure of CdTe thin films grown on (100) GaAs and Si substrates by metal- organic chemical vapor deposition (MOCVD). It has been determined that growth at 370°C with pre-exposure of the GaAs surface to Te following oxide desorption treatment at 600°C resulted in non-parallel epitaxy ((111)CdTe // (100)GaAs), while growth at 300°C following oxide desorption at 500°C with no exposure to Te resulted in parallel epitaxy ((100)CdTe // (100)GaAs). Both epitaxial orientation-relationships were observed on the same substrate for growth at 300°C temperature after 600°C oxide desorption treatment, but with no pre-exposure of the GaAs surface to Te. Preliminary results of growth of CdTe on Si are also reported.

Growth of zinc oxide thin films on Y2O3/Si substrates by chemical vapor deposition

2005 ◽  
Vol 275 (1-2) ◽  
pp. e2481-e2485 ◽  
Author(s):  
Chih-Wei Lin ◽  
Tsan-Yao Cheng ◽  
Li Chang ◽  
Jenh-Yih Juang
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Thin Films ◽  
Si Substrates

Processing Of PbTi03 And Pb(ZrxTi1−x)03 Thin Films By Novel Single-Solid-Source Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 474 ◽  
Author(s):  
Ping Lu ◽  
Hang Li ◽  
Shan Sun ◽  
Brace Tuttle
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Si Substrates ◽  
Process Reliability ◽  
Precursor Powders ◽  
Metalorganic Chemical

ABSTRACTFerroelectric PbTiO3(FT) and Pb(ZrxTi1−x)03 (PZT) thin films have been deposited on (100) MgO and (111) Pt/SiO2/(100)Si substrates by using a novel single-solid-source metalorganic chemical vapor deposition (MOCVD) technique. The new technique uses a powder delivery system to deliver the mixed precursor powders directly into a hot vaporizer from room temperature, therefore, avoiding any problems associated with polymerization or decomposition of the precursors before evaporation. The technique simplifies MOCVD processing significantly and can improve process reliability and reproducibility. The deposited FT and PZT films have a perovskite structure and are highly oriented with respect to the substrate. With improvement of process control, systematic studies of film evolution under various growth conditions have been carried out. Effects of substrate, substrate temperature, system vacuum, and precursor ratios in the mixture on film microstructure and properties will be presented in this paper.

Etching Characteristics of Polycrystalline 3C-SiC Films Using Enhanced RIE

2008 ◽  
Vol 600-603 ◽  
pp. 875-878
Author(s):  
Gwiy Sang Chung ◽  
Chang Min Ohn
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Sic Films ◽  
Reactive Gas

This paper describes magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC thin films grown on thermally oxidized Si substrates by atmospheric pressure chemical vapor deposition (APCVD). The best vertical structures were obtained by the addition of 40 % O2, 16 % Ar, and 44 % CHF3 reactive gas at 40 mTorr of chamber pressure. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. These results show that in a magnetron RIE system, it is possible to etch SiC with lower power than that of the commercial RIE system. Therefore, poly 3C-SiC etched by magnetron RIE has the potential to be applied to micro/nano electro mechanical systems (M/NEMS).

Microstructure and Chemistry of Nonstoichiometric (Ba,Sr)TiO3 Thin Films Deposited by Metalorganic Chemical Vapor Deposition

2000 ◽  
Vol 15 (7) ◽  
pp. 1433-1436 ◽  
Author(s):  
Igor Levin ◽  
Richard D. Leapman ◽  
Debra L. Kaiser
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Grain Boundaries ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Significant Drop ◽  
Si Substrates ◽  
Ti Content ◽  
Metalorganic Chemical

The microstructure and chemistry of (Ba,Sr)TiO3 thin films deposited on Pt/SiO2/Si substrates by metalorganic chemical vapor deposition were studied using highresolution transmission electron microscopy and quantitative spectrum imaging in electron energy loss spectroscopy. The grain boundaries in all films with overall Ti content ranging from 50.7% to 53.4% exhibit a significant increase in Ti/Ba ratio as compared to the grain interiors. The results suggest that the deviations of Ti/(Ba + Sr) ratio from the stoichiometric value of unity are accommodated by the creation of Ba/Sr vacancies, which segregate to the grain boundary regions. The films with Ti contents equal to or greater than 52% additionally contained an amorphous Ti-rich phase at some grain boundaries and multiple grain junctions; the amount of this phase increases with increasing overall Ti content. The analysis indicates that the amorphous phase can only partially account for the significant drop in dielectric permittivity accompanying increases in the Ti/(Ba + Sr) ratio.

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