Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide

2005 ◽  
Vol 97 (8) ◽  
pp. 083709 ◽  
Author(s):  
I. P. Nikitina ◽  
K. V. Vassilevski ◽  
N. G. Wright ◽  
A. B. Horsfall ◽  
A. G. O’Neill ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Nickel Silicide ◽  
Type Silicon

Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide

2008 ◽  
Vol 600-603 ◽  
pp. 635-638 ◽  
Author(s):  
Reza Ghandi ◽  
Hyung Seok Lee ◽  
Martin Domeij ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Contact Resistivity ◽  
Optimum Conditions ◽  
Power Devices ◽  
High Quality ◽  
Temperature Range ◽  
Type Silicon ◽  
Different Temperatures

This work focuses on Ni ohmic contacts to the C-face (backside) of n-type 4H-SiC substrates. Low-resistive ohmic contacts to the wafer backside are important especially for vertical power devices. Ni contacts were deposited using E-beam evaporation and annealed at different temperatures (700-1050 °C) in RTP to obtain optimum conditions for forming low resistive ohmic contacts. Our results indicate that 1 min annealing at temperatures between 950 and 1000 °C provides high quality ohmic contacts with a contact resistivity of 2.3x10-5 Ωcm2. Also our XRD results show that different Ni silicide phases appear in this annealing temperature range.

Effects of Si interlayer conditions on platinum ohmic contacts for p-type silicon carbide

2002 ◽  
Vol 31 (5) ◽  
pp. 506-511 ◽  
Author(s):  
T. Jang ◽  
J. W. Erickson ◽  
L. M. Porter
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Type Silicon ◽  
P Type

The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide

2007 ◽  
Vol 16 (6) ◽  
pp. 1753-1756 ◽  
Author(s):  
Guo Hui ◽  
Zhang Yi-Men ◽  
Qiao Da-Yong ◽  
Sun Lei ◽  
Zhang Yu-Ming
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Nickel Silicide

scholarly journals Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide

2008 ◽  
Vol 100 (4) ◽  
pp. 042003 ◽  
Author(s):  
A Kuchuk ◽  
V Kladko ◽  
M Guziewicz ◽  
A Piotrowska ◽  
R Minikayev ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Nickel Silicide ◽  
Fabrication And Characterization

Tantalum carbide ohmic contacts ton-type silicon carbide

1999 ◽  
Vol 75 (25) ◽  
pp. 3956-3958 ◽  
Author(s):  
T. Jang ◽  
L. M. Porter ◽  
G. W. M. Rutsch ◽  
B. Odekirk
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Tantalum Carbide ◽  
Type Silicon

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

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